• Current Optics and Photonics
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• v.3 no.2
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• pp.135-142
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• 2019

We report the precipitation of ZnO nanocrystals, Ag-clusters, and Ag nanoparticles in Ag/Er/Yb doped borate glasses by furnace annealing and $CO_2$ laser annealing. The XRD analysis revealed the precipitation of ZnO and Ag phases. The absorption spectra, the TEM and energy dispersive spectroscopy (EDS) revealed the incorporation of Er and Yb ions into ZnO nanocrystals formed by a laser technique and showed the surface plasmon band of Ag nanoparticles. The down-converted blue emission intensity of $Er^{3+}$ ions obtained under 365 nm excitation was enhanced by more than a hundred times in the glass treated by furnace annealing, mainly due to the energy transfer from Ag-clusters. Moreover, we discussed the contribution of Ag nanoparticles and defects to emission characteristics in the glasses treated by two annealing techniques. Up-conversion emissions of the $Er^{3+}$ ions under 980 nm excitation were enhanced due to the incorporation of $Er^{3+}$ and $Yb^{3+}$ ions into ZnO nanocrystals after thermal treatments.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.789-790
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• 2013

$Er_2O_3/SiO_2$ double-layer gate dielectric shows low gate leakage current and high capacitance. In this paper, we apply $Er_2O_3/SiO_2$ double-layer gate dielectric as a charge trap layer for the first time. $Er_2O_3/SiO_2$ double-layer thickness is optimized by EDISON Nanophysics simulation tools. Using the simulation results, we fabricated Schottky-barrier silicide source/drain transistor, which has10 um/10um gate length and width, respectively. The nonvolatile device demonstrated very promising characterstics with P/E voltage of 11 V/-11 V, P/E speed of 50 ms/500 ms, data retention of ten years, and endurance of $10^4$ P/E cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.971-975
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• 2006

[ $SrTiO_3:Al,Pr$ ] red phosphors doped with Y and Er were synthesized by solid state reaction method. The luminescence properties of $SrTiO_3:Al,Pr$ phosphors before and after doping were examined by photoluminescence. Efforts were paid to elucidate the cause of the increase of green luminescence in $(Sr_{0.95}Y_{0.05})TiO_3:Pr,Er\;and\;(Sr_{0.95}Y_{0.05})TiO_3:Pr,Al$ phosphors. The enhanced green luminescence was interpreted by the energy transfer between $Er^{3+}\;and\;Pr^{3+}$ ions, and the change of bandgap in the $(Sr_{0.95}Y_{0.05})TiO_3:Pr$ phosphors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.295-298
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• 1999

High quality of $Er_{2}O_{3}$ doped $LiNbO_{3}$ single crystal thin films were grown by the liquid phase epitaxial (LPE) method using $Er_{2}O_{3}$ doped at concentrations of 1,3, and 5 mol% respectively. After the growth of single crystal thin film, the crystallinity and the lattice mismatch along the c-axis between the film and the substrate was examined as a function of the variations of{{{{{Er}_{2}{O}_{3}}}}} dopant concentration using a X-ray double crystal technique. There was no lattice mismatch along the c-axis for the undoped film and those doped with 1 and 3 mol% of $Er_{2}O_{3}$. For 5 mol% of $Er_{2}O_{3}$ doped film, the lattice mismatch was $7.86{\times}10^{-4}$nm along the c-axis.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.612-617
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• 2014

The microstructure, nonlinear properties, and impulse clamping characteristics of Pr/Co/Cr/Al co-doped zinc oxide ceramics were investigated with various contents of $Er_2O_3$. Increasing $Er_2O_3$ content increased the density of the sintered pellets from 5.69 to $5.83g/cm^3$, and decreased the average grain size from 10.6 to $6.5{\mu}m$. With increased $Er_2O_3$ content, the breakdown field increased from 2318 to 4205 V/cm, and the nonlinear coefficient increased from 19.4 to 40.2. The clamp characteristics were improved with the increase of the content of $Er_2O_3$. The varistors doped with 2.0 mol% exhibited the best clamp characteristics, in which the clamp voltage ratio was 1.40-1.73 at 1-50 A in an impulse current.

• Journal of the Mineralogical Society of Korea
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• v.32 no.2
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• pp.127-143
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• 2019

The geology of the Chulmasan area consists of Precambrain Sogeunri formation, granitic gneiss, foliated biotite granite, foliated mica granite, basic dyke and acidic dyke. REE mineralization in the area occurs at granitic gneiss and foliated mica granite. Minerals with minor amounts of REE and Th from granitic gneiss and foliated mica granite are zircon ($Y_2O_3$ 0.00~1.18 wt.%, $Gd_2O_3$ 0.00~0.59 wt.%, $Er_2O_3$ 0.00~0.22 wt.%, $Yb_2O_3$ 0.00~0.34 wt.%, $Lu_2O_3$ 0.00~0.48 wt.%, $ThO_2$ 0.00~0.33 wt.%), thorianite ($Nd_2O_3$ 0.00~0.24 wt.%, $Lu_2O_3$ 0.00~0.26 wt.%), berthierine ($La_2O_3$ 0.04~0.26 wt.%, $Nd_2O_3$ 0.00~0.20 wt.%, $Tb_2O_3$ 0.04~0.12 wt.%, $Dy_2O_3$ 0.17~0.26 wt.%, $Er_2O_3$ 0.33~0.44 wt.%, $Lu_2O_3$ 0.00~0.19 wt.%, $ThO_2$ 0.61~0.93 wt.%), chlorite ($La_2O_3$ 0.44~0.68 wt.%, $Ce_2O_3$ 0.12~0.13 wt.%, $Nd_2O_3$ 0.31~0.44 wt.%, $Eu_2O_3$ 0.03~0.08 wt.%, $Dy_2O_3$ 0.09~0.21 wt.%, $Ho_2O_3$ 0.04~0.14 wt.%, $Er_2O_3$ 0.18~0.32 wt.%, $Lu_2O_3$ 0.07~0.21 wt.%, $ThO_2$ 0.00~0.97 wt.%), biotite ($Nd_2O_3$ 0.02~0.08 wt.%, $Gd_2O_3$ 0.07~0.08 wt.%, $Tb_2O_3$ 0.02~0.07 wt.%, $Dy_2O_3$ 0.35~0.43 wt.%, $Ho_2O_3$ 0.15~0.26 wt.%, $Er_2O_3$ 0.24~0.28 wt.%, $Yb_2O_3$ 0.06~0.18 wt.%, $ThO_2$ 0.00~0.12 wt.%), orthoclase ($Dy_2O_3$ 0.05~0.12 wt.%, $Ho_2O_3$ 0.05~0.06 wt.%, $Er_2O_3$ 0.28 wt.%, $Yb_2O_3$ 0.06~0.12 wt.%) and plagioclase ($Ho_2O_3$ 0.01~0.03 wt.%, $Er_2O_3$ 0.10~0.27 wt.%, $ThO_2$ 0.11~0.13 wt.%). REE minerals (bastnaesite and fergusonite) were sealed fractures in mainly fledspar, mica, zircon, apatite and ilmenite. Therefore, bastnaesite and fergusonite from the Chulmasan area were formed from redissolution/reconcentration of REE-and Th-bearing minerals from granitic gneiss and foliated mica granite at late stage by several igneous activies and metamorphism.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.307-312
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• 2007

The films of Er-doped ZnO (ZnO:Er) were prepared onto MgO wafers by ultrasonic spray pyrolysis at $550^{\circ}C$. The concentration of Er in the deposition source varied from 0.5 wt% to 3.0 wt%. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the Er concentration in the films. The films were grown as polycrystalline with a dominant direction of [002]. The grain size of the films were reduced by Er-doping. Er-doping enhanced the ultraviolet emission of ZnO:Er films. The ZnO:Er films prepared with the deposition source of 2.0 wt% Er showed the strongest ultraviolet light emission peak among the films in this study.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.480-486
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• 2015

$Pb_{1-x}MoO_4:Er^{3+}/Yb^{3+}$ phosphors with various doping concentrations of $Er^{3+}$ and $Yb^{3+}$ ($x=Er^{3+}+Yb^{3+}$, $Er^{3+}=0.05$, 0.1, 0.2, and $Yb^{3+}=0.2$, 0.45) are successfully synthesized using a microwave sol-gel method, and the up-conversion photoluminescence properties are investigated. Well-crystallized particles, which are formed after heat treatment at $900^{\circ}C$ for 16 h, exhibit a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, the $Pb_{0.7}MoO_4:Er_{0.1}Yb_{0.2}$ and $Pb_{0.5}MoO_4:Er_{0.05}Yb_{0.45}$ particles exhibit a strong 525 nm emission band, a weak 550 nm emission band in the green region, and a very weak 655 nm emission band in the red region. The Raman spectra of the doped particles indicate the presence of strong peaks at higher and lower frequencies induced by the disordered structures of $Pb_{1-x}MoO_4$ through the incorporation of the $Er^{3+}$ and $Yb^{3+}$ ions into the crystal lattice, which results in the unit cell shrinkage accompanying the new phase formation of the $MoO_{4-x}$ group.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.16-21
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• 2005

The effect of additive composition, using AlN and $Er_{2}O_{3}$ as sintering additives, on the mechanical properties of liquid-phase-sintered, and subsequently annealed SiC ceramics was investigated. The microstructures developed were quantitatively analyzed by image analysis. The average thickness of SiC grains increased with increasing the $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio in the additives whereas the aspect ratio decreased with increasing the ratio. The mechanical properties versus $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio curve had a maximum; i.e., there was a small composition range at which optimum mechanical properties were realized. The best results were obtained when the ratio ranged from 0.4 to 0.6. The flexural strength and fracture toughness of the SiC ceramics were $550\~650\;MPa$ and $5.5\~6.5$ MPa${\cdot}m^{1/2}$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.224-224
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• 2003

광통신을 위한 구성 요소는 빛을 발생시키는 발광소자, 빛을 검출하는 수광소자 그리고 광신호를 처리하는 광신호처리 소자로 구성된다. 이때 각 소자간 광전송과 광소자에 의한 광 신호 처리 과정에서 광전송 손실이 심각하게 일어나 광정보를 상실하게 되므로 각 요소별로 광신호 증폭이 반드시 필요하다. 뿐만 아니라 완전 광화에 의한 초고속/대용량 광통신망의 구축에는 저가이며, 광집적화가 가능한 광도파로형 광증폭기가 요구되고 있다. 짧은 거리에 높은 증폭 효율을 얻기 위한 광도파로형 광증폭기를 구현하기 위해서는 광통신 파장대인 1.55$\mu\textrm{m}$ 대역의 증폭이 가능한 Er 이온을 고농도로 도핑 할 필요가 있다. 그러나 Er 이온을 단순히 고농도로 첨가하면 Er-Er 간 뭉침 현상에 의해 더 이상의 증폭이 어렵게 된다. 본 연구에서는 이러한 문제를 해결하면서 스핀 코팅이 가능하여 저가 공정이 가능한 유/무기 졸-겔 재료 내에 Er 이온을 제어된 방법으로 첨가하고 그 결합 환경을 FT-IR 및 $^{17}$ O-NMR로 분석하였다. 유/무기 졸겔 재료 제조를 위하여 먼저 MPTS(MethAcryoxyPropylTrimethoxySilane)를 부분 가수분해한 후 ZrOCl$_2$.8$_2$O (Zirconyl Chloride Octahydrate) 와 ErCl$_3$. 6$H_2O$ (Erbium(III) Chloride Hexahydrate)를 순차적으로 결합시키고, Zr/MPTS 및 Zr/Er의 첨가비에 따른 발광 특성을 PL(photoluminescence) 스팩트럼으로 분석하여 Er 이온의 주위 결합 환경이 PL에 미치는 영향을 조사하였다. 또한 Si 기판에 코팅한 Er이 도핑된 유/무기 하이브리드 졸-겔 코팅막의 굴절율 등 광도파로 재료로서의 특성도 프리즘 커플러 등을 이용하여 조사하였다.