• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Journal of Conservation Science
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• v.25 no.1
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• pp.101-114
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• 2009

Potsherds and kilns of the AD 3th century excavated from Gundong and Majeon sites, Korea were studied to investigate the production techniques and provenance of potsherds and kilns on the pastes. For potsherds, kilns blocks and in-situ paleo-soils, provenance of raw materials were estimated through mineralogy and geochemistry, while production technique and thermal feature of kilns were investigated through observation of textures and compositions as well as firing experiment on paleo-soils. As a result of study, potsherds and kilns were found to have similar mineralogical compositions as the neighboring paleo-soils and to have same evolution path with that of geochemistry. The potsherds were divided into 3 groups according to firing temperature and production technique. Group 1 consists of reddish stamped pattern pottery with loose textures, which has many pores and contains many iron oxides. Its temper is less than about 0.5mm, and was probably fired between 700 to $800^{\circ}C$. Group 2 contains ash to grayish blue stamped pattern pottery, which has vitrified texture and few pores. Its temper is less than about 0.5mm, and was probably fired from 900 to $1,000^{\circ}C$. However, some potsherd belongs to the group 2 in terms of features for temper and pastes, but it was probably fired over $1,100^{\circ}C$. Group 3 contains reddish and grayish stamped pattern pottery. It has vitrified matrix, few pores and temper consists of polycrystalline quartz and feldspar over 2mm, and it was probably fired around $1,000^{\circ}C$. The kiln had experienced temperature from 600 to $700^{\circ}C$ on the wall, from 900 to $1,000^{\circ}C$ on the bottom, suggesting the function of high temperature firing.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.73.1-73.1
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• 2010

For the successful cold starting of a fuel cell engine, either internal of external heat supply must be made to overcome the formation of ice from water below the freezing point of water. In the present study, switchable vanadium oxide compounds as variable temperature-electrical resistance materials onto the surface of flat metallic bipolar plates have been prepared by a dip-coating technique via an aqueous sol-gel method. Subsequently, the chemical composition and micro-structure of the polycrystalline solid thin films were analyzed by X-ray diffraction, X-ray fluorescence spectroscopy, and field emission scanning electron microscopy. In addition, it was carefully measured electrical resistance hysteresis loop over a temperature range from $-20^{\circ}C$ to $80^{\circ}C$ using the four-point probe method. The experimental results revealed that the thin films was mainly composed of Karelianite $V_2O_3$ which acts as negative temperature coefficient materials. Also, it was found that thermal dissipation rate of the vanadium oxide thin films partially satisfy about 50% saving of the substantial amount of energy required for ice melting at $-20^{\circ}C$. Moreover, electrical resistances of the vanadium-based materials converge on an extremely small value similar to that of pure flat metallic bipolar plates at higher temperature, i.e. $T{\geq}40^{\circ}C$. As a consequence, experimental studies proved that it is possible to apply the variable temperature-electrical resistance material based on vanadium oxides for the cold starting enhancement of a fuel cell vehicle and minimize parasitic power loss and eliminate any necessity for external equipment for heat supply in freezing conditions.

• Resources Recycling
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• v.29 no.2
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• pp.55-61
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• 2020

Selective catalytic reduction (SCR) has been a promising technology to reduce the air pollution caused by nitrogen oxides (NOx) in several industries. The consumption of SCR catalysts increases every year as technology evolves, however those have a limited lifespan and usually end up in landfills after they deactivate. Currently, the most widely used catalyst for and stationary applications is V₂O₅-WO₃/TiO₂ which can contain around 50% wt V₂O₅ and 7-10% wt of WO₃. The vast uses for both vanadium and tungsten and the worldwide interest in recycling methods that allow for the extraction of metals from secondary sources represent the major motivation for this research. The extraction time, pH dependency, extraction concentration studies were carried out using Aliquat 336 in exxol D80 as the extractant. It was determined that to optimize the extraction of both metals 30min of contact time with an organic phase containing 0.5mol/L of Aliquat 336 are needed at a slightly acidic pH (~5.0). In addition, counter McCabe-Thiele studies allowed us to determine that one stage is necessary for the removal of 99% of vanadium while 2 stages are necessary for the extraction of tungsten and counter current simulations proved that the theoretical approach was correct.

• Economic and Environmental Geology
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• v.17 no.1
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• pp.35-47
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• 1984

Combined mineralogical and geochemical studies were made on two hundred eighty one representative samples from uraniferous coaly meta-pelites of the Ogcheon metamorphic terrain. Different mineral occurrence of the areas investigated should be taken into account for chemical processes for uranium extraction. Secondary uranium minerals identified are metauranocircite, metatorbernite and autunite. These are disseminated mostly on the laumontites which infused and filled secondary openings in the coaly matrix, and are often closely associated with iron oxides. The uranium distribution show distinctly log normal. Geochemical correlation coefficient of uranium and organic carbon displays +0.624~+0.796. The relationship of the major components to uranium can be expressed by the following regression equation: Log $(U_3O_8{\times}10^4)$=1.40117-0.00076 (quartz) -0.00118 (muscovite) +0.00235 (biotite) +0.00323 (other silicates) - 0.01114 (apatite) +0.01124 (hematite) +0.00149 (limonite) -0.01823 (opaques)+0.03049 (organic carbon). Uranium in the coaly meta-pelites of the Ogcheon Group was deposited together under same physico-chemical environmental conditions. There is a considerable variation in the ${\delta}^{34}S$ values (11.2~16.8 per mil) of the pyrites from the U-bearing meta-pelites, which implies sedimentary origin. The two U-bearing coaly rocks analyzed have ${\delta}^{13}C$ values between -16.88~-18.00 per mil, which suggests organic.

• Journal of Powder Materials
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• v.18 no.6
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• pp.552-561
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• 2011

This study attempted to manufacture a Cu-15 at.%Ga coating layer via the cold spray process and investigated the effect of heat treatment environment on the properties of cold sprayed coating material. Three kinds of heat treatment environments, $5%H_2$+argon, pure argon, and vacuum were used in this study. Annealing treatments were conducted at $200{\sim}800^{\circ}C$/1 hr. With the cold sprayed coating layer, pure ${\alpha}$-Cu and small amounts of $Ga_2O_3$ were detected in the XRD, EDS, EPMA analyses. Porosity significantly decreased and hardness also decreased with increasing annealing temperature. The inhomogeneous dendritic microstructure of cold sprayed coating material changed to the homogeneous and dense one (microstructural evolution) with annealing heat treatment. Oxides near the interface of particles could be reduced by heat treatment especially in vacuum and argon environments. Vacuum environment during heat treatment was suggested to be most effective one to improve the densification and purification properties of cold sprayed Cu-15 at.%Ga coating material.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• The Journal of the Petrological Society of Korea
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• v.3 no.1
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• pp.1-19
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• 1994

We present petrography, mode and chemistry data for Fe-Ti oxide minerals from the Mesozoic granitoids in South Korea. Magnetites from the Daebo Uurassic) granites are nearly pure $Fe_3O_4$, while those from the Bulgugsa (Cretaceous) granites contain considerable amounts of Mn and Ti. This is probably related to rapid cooling of the Bulgugsa granites compared with slow cooling of Daebo granites, which is supported by geologic relations and hornblende geobarometry results of Cho and Kwon (1994) on the emplacement depth for these granites. The composition of ilmenite does not shew appreciable difference between the Daebo and Bulgugsa granites. However, $Fe_2O_3$ contents are higher for the ilmenites coexisting with magnetite than for those without magnetite. In the temperature vs. oxygen fugacity diagram, the Bulgugsa granites plot near Ni-NiO and QFM buffer curves, although only two samples show greater than the granite solidus temperature. The mode data suggest that both magnetite- and ilmenite-series exist in Daebo and Bulgusa granites from the Kyonggi massif, Ogcheon belt and Youngnam massif, while only magnetite-series exists in Bulgugsa granites from the Kyongsang basin. Many ilmenite-series granites occur in the Ogcheon belt, which might be related to assimilation of carboniferous sediments in the belt. The proportion (44 : 56) between ilmenite- and magnetite-series for the Daebo granites is significantly different from that of Ishihara et al. (1981) who showed, using magnetic susceptibility data, predominance of ilmenite-series (more than 70%) for the Daebo granites, which can be mainly attributed to preference in sampling and to wrong assignment of age for some plutons. We also found magnetite in weakly-magnetized Kanghwa granite which was formerly classified as ilmenite-series by Ishihara et al. (1981). The proportion of ilmenite-series increases in the order of hornblende biotite granite, biotite granite and two mica granite. We conclude from these observations that the ilmeniteseries granites might have originated from contamination of carboniferous crustal material and/or such source material.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.7
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• pp.473-482
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• 2009

In this study, iron and manganese coated sand (IMCS) was prepared by mixing Joomoonjin sand with solutions having different molar ratio of manganese ($Mn^{2+}$) and iron ($Fe^{3+}$). Mineral type of IMCS was analyzed by X-ray diffraction spectroscopy. Removal efficiency of arsenic through As(III) oxidation and As(V) adsorption by IMCS having different ratio of Mn/Fe was evaluated. The coated amount of total Mn and Fe on all IMCS samples was less than that on sand coated with iron-oxide alone (ICS) or manganese-oxide alone (MCS). The mineral type of the manganese oxide on MCS and iron oxides on ICS were identified as ${\gamma}-MnO_2$ and mixture of goethite and magnetite, respectively. The same mineral type was appeared on IMCS. Removed amount As(V) by IMCS was greatly affected by the content of Fe rather than by the content of Mn. Adsorption of As(V) by IMCS was little affected by the presence of monovalent and divalent electrolytes. However a greatly reduced As(V) adsorption as observed in the presence of trivalent electrolyte such as $PO_4\;^{3-}$. As(III) oxidation efficiency by MCS in the presence of NaCl or $NaNO_3$ was two times greater than that in the presence of $PO_4\;^{3-}$. Meanwhile a greater As(III) oxidation efficiency was observed by IMCS in the presence of $PO_4\;^{3-}$. This was explained by the competitive adsorption between phosphate and arsenate on the surface of IMCS.