• Proceedings of the KIEE Conference
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• 1999.11a
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• pp.20-23
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• 1999

본 연구에서는 $SrBi_xTa_2O_9$ 세라믹스에서 Bi 몰비 변화에 대한 x를 2.4, 2.6, 2.8, 3.0, 3.2로 변화시키면서 소결 온도도 변화하여 각각에 대한 구조 및 전기적 특성을 조사하였다. Bi 부족과 이상과잉에 따라 이상의 결정구조를 보였으며 소결온도가 높아질수록 Bi 휘발이 많아져 정방성이 떨어졌다. Sr/Bi/Ta=1/2.8/2 조성에서 가장 큰 정방성과 그레인 크기를 나타내었으며 그 조성에서 1000[$^{\circ}C$]로 소결한 시료에서 유전율 132를 보였고 1050[$^{\circ}C$]로 소결한 시료에서 잔류분극 1.134[${\mu}C/cm^2$]을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.549-552
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• 2002

$(SrBi_2Nb_2O_9)_{0.5}-(Bi_3TiNbO_9)_{0.5}$ ceramics were fabricated by the mixed-oxide method, and the structural and electrical properties with variation of ball-milling time were investigated. All SBN-BTN specimens showed the typical polycrystalline X-ray diffraction patterns without the presence of the second phase. The SBN-BTN specimen sintered at $1200^{\circ}C$ and ball-milled for 168h showed the average grain size of $16{\mu}m$. The dielectric constant and dielectric loss of the SBN-BTN specimen sintered at $1150^{\circ}C$ and ball-mill for 72h were 225, 0.4% at 1KHz, respectively.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.534-537
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• 1998

In this paper, a set of novel self-timed latches are introduced and analyzed. These latches have no back-to-back connection as in conventional self-timed latch, and both inverting and noninerting outputs are evaluated simultaneously leading to thigher oepating frequencies. Power consumption of these latches ar ealso comparable to or less than that of conventional circuits. Novel type of cross-coupled inverter used in the proosed circuits implements static operatin without signal fighting with the main driver during signal transition. Proposed latches ar tested using a 0.6.mu.m triple-poly triple-metal n-well CMOS technology. The resutls indicates that proposed active-low sefl-timed latch (ALSTL) improves speed by 14-34% over conventional NAND SR latch, while in active-high self-timed latch (AHSTL) the improvements are 15-35% with less power as compared with corresponding NORA SR latch. These novel latches have been successfully implemented in a high-speed synchronous DRAM (SDRAM).

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.121-124
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• 2000

The time dependence of irreversible magnetization of grain aligned infinite layer superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ was measured in temperature range of 2 K < T < 30 K for H= 0.5 T, 1.0 T and 1.5 T parallel to c-axis. From this, we calculated normalized flux creep rate S(T) ${\equiv}$ dlnM/dlnt and found that the temperature independent region in S(T) is significantly wide in comparision with other cuprate superconductors. Using the method of Maley et al., we also deduce the current density dependence of pinning potential and glassy exponent ${\mu}$.

• Progress in Superconductivity
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• v.8 no.2
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• pp.138-142
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• 2007

We observed discrete fluxon-flow resonance steps in high magnetic fields in a stack of Josephson junctions with lateral size of $1.5{\times}17{\mu}m^2$. The measurement sample was prepared by sandwiching a stack of $Bi_2Sr_2CaCu_2O_{8+x}$ intrinsic Josephson junctions between two Au electrodes by using the double-side-cleaving technique. This technique allowed us to isolate the intrinsic Josephson junction structures from the inductive interference of the basal stack. The resonance steps observed are in good agreement with the collective Josephson fluxon dynamics that are in resonance with the plasma oscillation modes inside the stacked Josephson junctions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.338-341
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• 2002

$(Ba_{1-x}Sr_{0.4}Ca_x)TiO_{3}$ (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. Their structural and dielectric properties were investigated with variation of composition ratio and $Al_{2}O_{3}$ doping contents. As results of the X-ray diffraction and microstructure analysis, the grain size of BSCT thick films was decreased with increasing $Al_{2}O_{3}$ amount. The thickness of BSCT thick films by 4-coating/drying is about $110{\sim}120{\mu}m$. The tunability increased with decreasing Ca content, and the BSCT(50/40/10) specimen doped with 1.0wt% $Al_{2}O_{3}$ showed the highest value of 12.94% at 5kV /cm.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.86-87
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• 2002

Fe과 Mo이 교대로 정렬해 있는 이중 페로브스카이트 구조를 갖는 $A_{2-x}$FeMo $O_{6}$(A=Ca, Sr, Ba) 화합물들은 망간 산화물들에 비해 높은 $T_{c}$ (310-420K)의 준강자성 상태를 갖는다.$^{1.3}$ 이 화합물들은 F $e^{3+}$ (S=5/2) 와 M $o^{5+}$(S=1/2) 스핀들 사이의 커다란 반강자성 상호작용으로 이론적으로 4$\mu$$_{B}$/f.u.의 $M_{s}$ 값을 갖는다. A-site의 평균 이온 반경( $r_{A}$)이 증가함에 따라 이 화합물들의 결정구조는 Monoclinic(A=Ca)에서 Tetragonal(Sr)과 Cubic(Ba)으로 점진적으로 변화한다.$^3$(중략)(중략)략)략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.474-475
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• 2007

The $Sr_{0.8}Bi_{2.2}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The aging properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The dielectric constant and leakage current density with Pt electrode is 340 and $6.81{\times}10^{-10}\;A/cm^2$ respectively. The maximum remanent polarization and the coercive electric field with Pt electrode are $12.40{\mu}C/cm^2$ and 30kV/cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.893-896
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• 2000

The SrBi$_2$Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite Phase was crystalized to 650[$^{\circ}C$] and Bi-layered perovskite phase was crystalized above 700[$^{\circ}C$]. The maximum remanent polarization is 11.73 ${\mu}$C/cm$^2$at 500[$^{\circ}C$] of substrate temperature and 750[$^{\circ}C$] annealing temperature for 30min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.252-254
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• 2003

A magnetic field sensor is fabricated with superconducting ceramics system. The sensor at liquid nitrogen temperature shows the increase in electrical resistance by applying magnetic field. Actually, the voltage drop across the sensor is changed from zero to a value more than $100{\mu}V$ by the applied magnetic field. The change in electrical resistance depends on magnetic field. The sensitivity of this sensor is 2.9 ohm/T. The increase in electrical resistance by the magnetic field is ascribed to a modification of the Josephson junctions due to the penetrating magnetic flux into the superconducting material.