• 한국재료학회지
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• 제23권12호
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• pp.727-731
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• 2013

In this study, green barium strontium silicate phosphor ($BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$) was synthesized using a solid-state reaction method in air and reducing atmosphere. Investigation of the firing temperature indicates that a single phase of $BaSrSiO_4$ is formed when the firing temperature is higher than $1400^{\circ}C$. The effect of firing temperature and doping concentration on luminescent properties are investigated. The light-emitting property was the best when the molar content of $Eu_2O_3$ was 0.025 mol. Also, the luminescent brightness of the $BaSrSiO_4$ fluorescent substance was the best when the particle size of the barium was $0.5{\mu}m$. $BaSrSiO_4$ phosphors exhibit the typical green luminescent properties of $Eu^{3+}$ and $Eu^{2+}$. The characteristics of the synthesized $BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$ phosphor were investigated using X-ray diffraction (XRD) and scanning electron microscopy. The maximum emission band of the $BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$ was 520 nm.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.49-52
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• 2009

Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around $660^{\circ}C$. The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at $1450^{\circ}C$ were about $1.6{\mu}m$ and $45{\mu}m$, respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at $1450^{\circ}C$ the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.

• 한국초전도ㆍ저온공학회논문지
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• 제6권3호
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• pp.6-11
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• 2004

YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.24-28
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• 2003

(Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184％ and 15.62%, respectively.

• 전자공학회논문지A
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• 제31A권7호
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• pp.63-68
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• 1994

The Curie point annealing effects on electrophysical phenomena at the magnetized strontium ferrite(SrO$\cdot$ 6$Fe_{2}O_{3}$) ceramics electrode/10$^{-3}$M KC1 aqueous electrolyte interfaces have been studied using cyclic voltammetric, normal pulse voltammetric, chronocoulometric, and electrochemical impedance techiques. After the Curie point annealing the magnetic flux densities of the speciment was decreased from 900-1100 gauss to 1-2 gauss, i.e. demagnetized. The real component of interfacial impedance was decreased from 7280-7320 ohm to 790-830 ohm. The adsorption and the charge on the electrical double layer was increased from 0 $\mu$C to -58 $\mu$C. The Curie point annealing and the related electrical double layer effect can influence not only the electrophysical properties of the strontium ferrite ceramics electrode itself but also the electrochemical phenomena at the electrode interface. This experimental results suggest that the Curie point annealing and the related electrical double layer effect can be applied to electrochemical magnetic sensors.

• 한국진공학회지
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• 제13권4호
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• pp.145-149
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• 2004

RF magnetron sputtering 방법으로 miscut된 기판을 이용해서 양질의 압전 산화물 에피 박막을 제작하였다. 박막은 (001) $SrTiO_3$ 기판 위에 증착되었으며, (100) 방향으로 $0^{\circ}$-$8^{\circ}$의 miscut 각도를 갖는 기판들을 사용했다. $4^{\circ}$이상의 큰 miscut 각도를 갖는 기판 위에 성장된 박막의 경우, x-ray diffraction (XRD) 패턴은 perovskite 상의 순수한 PMN-PT 피크만을 보여 주었으며, wavelength dispersive x-ray fluorescence spectroscopy를 이용해서 분석한 조성비는 stoichiometric한 조성비에 가까운 값을 보여주었다. 반면에, miscut 각도가 없는 기판 위에 증착된 박막의 경우, 2차상인 pyrochlore 상을 포함하는 XRD 패턴을 보여주었다. $8^{\circ}$ 기판 위에 성장된 박막의 경우 실온에서 20$\mu$C/$\textrm{cm}^2$라는 높은 잔류분극 값을 보여주었다

• Journal of Radiation Protection and Research
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• 제16권2호
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• pp.17-26
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• 1991

외삽형 전리함을 사용하여 $^{90}Sr+^{90}Y(1.65mCi)$ 베타선원에 대해 교정점 30cm 거리에서 조직표면의 흡수선량을 측정하였다. 이때 흡수선량 측정에 영향을 주는 유효단면적, 입사창 감쇠율, 극성효과, 이온 재결합을 등의 보정인자를 분석하였다. 이들 인자를 보정한 후의 조직표면의 흡수선량은 $1.493{\mu}Gy/sec({\pm}2.9%)$로 평가되었다.

• 한국진공학회지
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• 제8권3A호
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• pp.224-230
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• 1999

$SrBi_{2x}Ta_2O_9$ (SBT) thin films were prepared on platinized silicon substrates by MOD process, and their ferroelectric and leakage current characteristics were investigated. The grain size of the MOD derived SBT films increased with increasing the BI/Ta mole ration. Although the SBT films with x of 0.8~1.2 were composed of the equiaxed grains, the elongated grains were also observed for the SBT films with x of 1.4 and 1.6. The SBT film with x of 1.2 exhibited the optimum ferroelectric properties of 2PR : 9.79 $\muC/\textrm{cm}^2$ and Ec : 24.2kV/cm at applied voltage of 5V. The leakage current density of the SBT films increased with increasing the BI/Ta mole ratio. With post annealing process, 2Pr and $E_c$of the SBT film with x of 1.2 increases 11.3 $\muC/\textrm{cm}^2$ and 39.6kV/cm, respectively. decrement of the leakage current density by post annealing process increased remarkably with increasing the Bi/ta mole ratio, and the SBT film with x=1.6 exhibited the lowest leakage current density after post annealing process.

• 한국환경농학회지
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• 제5권1호
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• pp.48-54
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• 1986

원자력산업(原子力産業)의 발달(發達)에 따라서 이들 시설(施設)로부터 방출(放出)될 수 있는 방사성물질(放射性物質)에 의한 환경오염(環境汚染)과 방사성폐기물처리(放射性廢棄物處理), 처분에 관한 문제가 야기되고 있으며 농업환경(農業環境)에서는 특히 반감기(半減期)가 긴 핵종(核種)의 토양(土壤), 식물계(植物系)를 통한 인체(人體)로의 이행경로(移行經路)가 매우 중요하다 따라서 본 연구는 답토양(畓土壤)의 이화학적특성(理化學的特性)과 점토광물(粘土鑛物)등을 고려하여 국내(國內)에 분포(分布)된 5개 토양통(土壤統)을 선정하여 $Sr^{90}$을 처리(處理)한후 pot 재배(栽培)로 수도체내(水稻體內)의 흡수(吸收)와 분포(分布)를 조사하여 다음과 같은 결과(結果)를 얻었다. 1) $Sr^{90}$은 처리량에 비례해서 수도체내(水稻體內)에 흡수량(吸收量) 증가(增加)를 보였으나 토양(土壤) 10㎏ 당(當) $40{\mu}Ci$ 처리(處理)하여도 수도(水稻)의 생육장해(生育障害)는 볼 수 없었다. 2) 수도체내(水稻體內) 부위별분포(部位別分布)에서 $Sr^{90}$ 은 잎(84.5%)에서 가장 높았고 줄기(13.5%)와 종실(種實)(2.0%) 순서로 낮은 분포를 보였고 $Sr^{90}/Ca$ 비는 잎(872)과 줄기(667)에서 높고 종실(種實)(89)에서 낮았다. 3) 수도(水稻)의 $Sr^{90}$ 흡수율(吸收率)은 $0.15{\sim}0.30%$ 범위였으며 토양(土壤) pH, 치환성양(置換性陽) ion 함량(含量)의 증가(增加)에 따라서 수도(水稻)에 의한 $Sr^{90}$ 흡수(吸收)는 감소(減少)되었으나, 토양중(土壤中) 질소, 유리물 및 점토함량(粘土含量)의 증가(增加)에 따라서는 흡수(吸收)도 증가(增加)되었고, Illite가 적고 Vermiculite가 많은 토양(土壤)에서 $Sr^{90}$흡수(吸收)가 많았다.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2002년도 연료전지심포지움 2002논문집
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• pp.117-122
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• 2002

고체산화물 연료전지의 구성요소인 양극(공기극)을 GNP와 Pechini 법을 이용하여 $(La{1-x}Sr_x)MnO_3$ 양극을 합성하여 합성한 분말의 특성과 단위전지로 사용하기 위한 조건에서의 특성을 측정하였다. GNP로 합성한 분말의 경우 직접 $(LaSr)MnO_3$ 단일 결정상을 얻을 수 있었으나, Pechini 법으로 합성한 분말의 경우는 비정질이었다. 또한 각각의 방법으로 합성한 분말의 입자형태는 구형이었고 1차상 입자크기는 GNP가 40nm, Pechini, 법으로 합성한 경우 20nm 정도의 크기를 갖고 있었다. GNP로 합성한 분말의 입자크기와 비표면적의 경우 glycine의 첨가량이 증가함에 따라 입자크기는 감소하였으나 최적 glycine 첨가량은 2.0mole 였고, 이 때 평균2차상의 입자크기는 $13.24{\mu}m$로 agglomeration 되어있었다. 최적 cathode조성은 GNP법으로 합성한 $(La_{0.9}Sr_{0.1}MnO_3$로서 가능하였고, 이 조성에서의 열팽창계수는 $9.89\times10^{-6}/^{\circ}C$이고, 전기전도도($1200^{\circ}C$에서 2시간소결)는 110 S/cm을 나타내었다.