• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.11
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• pp.1019-1022
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• 2016

In this paper, a 2~16 GHz GaN wideband power amplifier MMIC s designed and fabricated using the nonuniform power amplifier design technique that utilizes drain shunt capacitors to simultaneously provide each transistor with the optimum load impedance and phase balance between input and output transmission lines. The power amplifier MMIC chip that is fabricated using the $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors occupies an area of $3.9mm{\times}3.1mm$ and shows a linear gain of larger than 12 dB and an input return loss of greater than 10 dB. Under a continuous-wave mode, it has a saturated output power of 36.2~38.5 dBm and a power-added efficiency of about 8~16 % in 2 to 16 GHz.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.217-221
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• 2004

[ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.

• Horticultural Science & Technology
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• v.33 no.6
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• pp.932-940
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• 2015

One of the main factors restricting production of triploid seedless watermelon is poor germination due to weak embryos, thick seed coats, and larger air spaces. This study was carried out to investigate the priming effects of different concentrations of chemicals, including hydrogen peroxide ($H_2O_2$), fusicoccin, and gibberellic acid (GA) on germination and seedling uniformity of triploid watermelon (Citrullus lanatus). Three commercial triploid cultivars, Seedless Plus, Sinus, and Sizero, were pretreated with water and different levels of $H_2O_2$ (2 and 4%), fusicoccin (FC: 1, 5, and $10{\mu}M$), and GA (1, 5, and $10{\mu}M$). The present findings helped to find optimal priming conditions for improving germination of triploid watermelon. Treatment with $5{\mu}M$ GA and hydropriming helped to break seed dormancy, enhancing the final germination percentages in all triploid cultivars and increasing the germination index in Sizero. These seed-priming treatments could be used on large scale for industrial applications. Moreover, hydropriming provides a simple, effective, and costless method to improve seed germination and seedling vigor of Sinus and Sizero varieties.

• Journal of Navigation and Port Research
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• v.30 no.2
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• pp.137-143
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• 2006

The optimum grillage design belongs to nonlinear constrained optimization problem. The determination of beam scantlings for the grillage structure is a very crucial matter out of whole structural design process. The performance of optimization methods, based on penalty functions, is highly problem-dependent and many methods require additional tuning of some variables. This additional tuning is the influences of penalty coefficient, which depend strongly on the degree of constraint violation. Moreover, Binary-coded Genetic Algorithm (BGA) meets certain difficulties when dealing with continuous and/or discrete search spaces with large dimensions. With the above reasons, Real-coded Micro-Genetic Algorithm ($R{\mu}GA$) is proposed to find the optimum beam scantlings of the grillage structure without handling any of penalty functions. $R{\mu}GA$ can help in avoiding the premature convergence and search for global solution-spaces, because of its wide spread applicability, global perspective and inherent parallelism. Direct stiffness method is used as a numerical tool for the grillage analysis. In optimization study to find minimum weight, sensitivity study is carried out with varying beam configurations. From the simulation results, it has been concluded that the proposed $R{\mu}GA$ is an effective optimization tool for solving continuous and/or discrete nonlinear real-world optimization problems.

• Korean Journal of Veterinary Research
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• v.44 no.2
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• pp.201-206
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• 2004

Norfloxacin (NFX) is a fluorquinolone antibacterial agent with a high antimicrobial activity and might have great potential for treating common infections in poultry. The objective of this study was to obtain comparative pharmacokinetic data after a single oral administration and medication with drinking water of norfloxacin-glycine acetate (NFX-GA) at the dose rate of 10 mg/kg bw in broilers. Fifty minutes following oral administration of NFX-GA, serum concentrations peaked at $1.32{\mu}g/mL$ (range $1.03-1.45{\mu}g/mL$). Serum concentration of NFX declined with a half-life of $7.21{\pm}1.81$ h. On the third day after administration of medicated drinking water, steady-state was reached, with mean concentrations of NFX of $0.70{\pm}0.35{\mu}g/mL$. The concentration of NFX after medication of NFX-GA with drinking for 3 days provides sufficient levels to obtain maximum therapeutic effects and maintains the serum persistence of concentration exceeding MIC.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1246-1249
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• 1994

Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

• Journal of Microbiology and Biotechnology
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• v.22 no.7
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• pp.939-946
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• 2012

Antibiotic production with Streptomyces sindenensis MTCC 8122 was optimized under submerged fermentation conditions by artificial neural network (ANN) coupled with genetic algorithm (GA) and Nelder-Mead downhill simplex (NMDS). Feed forward back-propagation ANN was trained to establish the mathematical relationship among the medium components and length of incubation period for achieving maximum antibiotic yield. The optimization strategy involved growing the culture with varying concentrations of various medium components for different incubation periods. Under non-optimized condition, antibiotic production was found to be $95{\mu}g/ml$, which nearly doubled ($176{\mu}g/ml$) with the ANN-GA optimization. ANN-NMDS optimization was found to be more efficacious, and maximum antibiotic production ($197{\mu}g/ml$) was obtained by cultivating the cells with (g/l) fructose 2.7602, $MgSO_4$ 1.2369, $(NH_4)_2PO_4$ 0.2742, DL-threonine 3.069%, and soyabean meal 1.952%, for 9.8531 days of incubation, which was roughly 12% higher than the yield obtained by ANN coupled with GA under the same conditions.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.57-57
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• 1993