• Title/Summary/Keyword: ${\delta}D$

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A Study on Delta Image Composition Methods of the Depth-Image-Based Rendering for the Generation of Stereoscopic Images on Mobile Devices (모바일 장치에서 입체 영상 생성을 위한 깊이 영상 기반 렌더링의 부가 정보 영상 구성 방법에 관한 연구)

  • Kim, Min-Young;Park, Kyoung-Shin;Choo, Hyon-Gon;Kim, Jin-Woong;Cho, Yong-Joo
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.7
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    • pp.1428-1436
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    • 2012
  • This paper presents the delta image composition methods using Depth-Image-Based Rendering (DIBR) for 3D stereoscopic broadcasting for the low bandwidth mobile DMB broadcasting system. With DIBR, a left and depth images are transmitted to a mobile device, which restores the right view, whose quality may be poor. This paper describes delta image composition methods for the restoration while minimizing the amount of the transmitted data.

Raman Spectroscopic Deconvolution of Strain and Charge Doping Effects in Graphene on SiO2/Si Substrate

  • Lee, Ji-Eun;Kim, Seon-Ho;Gang, Seong-Gyu;Yang, Seong-Ik;Lee, Yeong-Sik;Ryu, Sun-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.155-155
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    • 2011
  • 그래핀(graphene)은 모든 탄소 원자가 표면에 존재하는 이차원 결정이기 때문에 다른 고체 표면에 고착될 때 인장 및 압축 변형(tensile & compressive strain)과 전하 도핑(charge doping)에 취약하다고 알려져 있다. 본 연구에서는 산화실리콘(SiO2/Si) 기판 위에 기계적으로 박리된 그래핀에 혼재되어 나타나는 기계적 변형과 전하 도핑 현상을 분석할 수 있는 라만 분광법 기술을 개발하고자 하였다. 대부분의 시료에서 기계적 변형으로 인해 라만 G-band와 2D-band의 진동수(${\omega}$)가 특별한 상관관계(${\Delta}{\omega}2D/{\Delta}{\omega}G$ = 2.0 ${\pm}$ 0.2)를 가진다는 사실을 확인하였다. 전자 친화도가 큰 F4-TCNQ (tetrafluorotetracianoquinodimethane)를 증착하여 화학적으로 p-형 전하 도핑을 유도한 그래핀에서는 기계적 변형과는 분명히 구별되는 상관관계(${\Delta}{\omega}2D/{\Delta}{\omega}G$ = 1.0 ${\pm}$ 0.3)가 관찰되었다. 본 연구는 라만 분광법을 통해 그래핀의 기계적 변형과 전하 도핑 정도를 정량적으로 분리해서 분석할 수 있는 방법을 제시해 준다.

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The Shift of Threshold Voltage and Subthreshold Current Curve in LDD MOSFET Degraded Under Different DC Stress-Biases (DC 스트레스에 의해 노쇠화된 LDD MOSFET에서 문턱 전압과 Subthreshold 전류곡선의 변화)

  • Lee, Myung-Buk;Lee, Jung-Il;Kang, Kwang-Nham
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.5
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    • pp.46-51
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    • 1989
  • The degradation phenomena induced by hot-carrier injection was studied from the shift of threshold voltage and subthreshold current curve in LDD NMOSFET degraded under different DC stress-biases. Threshold voltage shift ${Delta}V_{tex}$ defined in saturation region was separated into contri butions due to trapped oxide charge $V_{ot}$ and interface traps ${Delta}V_{it}$ generated from midgap to threshold voltage. Under th positive stress electric field (TEX>$V_g>V_d$) condition, the shift of threshold voltage was attributed to the electrons traped ar gate oxide but subthreshold swing was not negative stress electric field ($V_g) condition, holes seems to be injected positive charges so threshold voltage and subthreshold swing were increased.

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Fatigue Crack Propagation Characteristics in SA 516-70 Steel for Pressure Vessels at Low Temperature (SA 516-70 압력용기용강의 저온피로 크랙전파 특성에 관한 연구)

  • Park, K.D.;Cha, S.S.
    • Journal of Power System Engineering
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    • v.3 no.2
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    • pp.51-56
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    • 1999
  • Fatigue crack propagation rates and characteristics of the SA516-70 steel which is used for the low temperature pressure vessels, were studied in the room temperature of $10^{\circ}C$ and low temperature ranges of $-10^{\circ}C,\;-30^{\circ}C,\;-50^{\circ}C,\;and\;-70^{\circ}C$ with stress ratio of R=0.05. The obtained experimental results are as follows; 1) In the logarithmic relationship between the fatigue crack propagation rate(da/dN) and stress intensity factor K, the linear relationship was obtained up to da/dN > $8{\times}10^3$ mm/cycle in the same of room temperature, but in low temperature case, the relationship was extended to the range of low crack propagation rate. 2) The lower limit stress intensity factor of SA516-70 ${\Delta}K_{th}\;was\;23MPa\sqrt{m}$ and in the case of low temperature $-50^{\circ}C\;and\;-70^{\circ}C$, the crack propagation rate da/dN which showed a linear relation, reached rapidly to the ${\Delta}K_{th}$. As the results, the crack propagation rates of $-50^{\circ}C\;and\;-70^{\circ}C$ were lower than that of room temperature and according to the testing temperature the rates were decreased rapidly to the ${\Delta}K_{th}$. 3) On the relationship between the stress intensity factor ${\Delta}K$ and the track propagation cycle, the stress intensity factors of low cycle region was rapidly increased at low temperature, but ${\Delta}K$ was increased rapidly at room temperature of high cycle. 4) On the relationship between the fatigue crack propagation rate and cycle, the fatigue crack propagation rate showed higher gradient in the room temperature than the low temperature due to the increment in ductility at low temperature.

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A 1.2V 90dB CIFB Sigma-Delta Analog Modulator for Low-power Sensor Interface (저전력 센서 인터페이스를 위한 1.2V 90dB CIFB 시그마-델타 아날로그 모듈레이터)

  • Park, Jin-Woo;Jang, Young-Chan
    • Journal of IKEEE
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    • v.22 no.3
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    • pp.786-792
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    • 2018
  • A third-order sigma-delta modulator with the architecture of cascade of integrator feedback (CIFB) is proposed for an analog-digital converter used in low-power sensor interfaces. It consists of three switched-capacitor integrators using a gain-enhanced current-mirror-based amplifier, a single-bit comparator, and a non-overlapped clock generator. The proposed sigma-delta analog modulator with over-sampling ratio of 160 and maximum SNR of 90.45 dB is implemented using $0.11-{\mu}m$ CMOS process with 1.2-V supply voltage. The area and power consumption of the sigma-delta analog modulator are $0.145mm^2$ and $341{\mu}W$, respectively.

Novel Polar Transmitter with 2-Bit Sigma-Delta Modulation (2비트 시그마-델타 변조를 이용한 새로운 폴라 트랜스미터)

  • Lim, Ji-Youn;Cheon, Sang-Hoon;Kim, Kyeong-Hak;Hong, Song-Cheol;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.8
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    • pp.970-976
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    • 2007
  • This paper presents a novel polar transmitter architecture with a 2-bit sigma-delta modulator. In the proposed architecture, the 2-bit sigma-delta modulator is introduced to suppress quantization noise of conventional sigma-delta modulator. The power amplifier configuration is also modified in a binary form to accommodate the 2-bit digitized envelope signal. The Ptolemy simulation results of the proposed structure show that the spectral property is greatly improved in full transmit band of EDGE system. The fine quantization scheme of the 2-bit modulator lowers the noise level by 10dB without increasing the over-sampling ratio, which may be obtained if the over-sampling ratio increases twofold. Dynamic range is also enhanced up to 5dB owing to the new form of the power amplifier in the transmitter.

Analysis of Eutectic Reaction as a Function of Cooling Rate in High Manganese Flake Graphite Cast Irons (고 망간 편상흑연주철에서 냉각속도별 공정반응 분석)

  • Lee, Sang-Hwan;Lee, Hyun-Woo;Lee, Sang-Mok
    • Journal of Korea Foundry Society
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    • v.33 no.4
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    • pp.162-170
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    • 2013
  • The effects of Mn content and cooling rate on the eutectic reaction of flake graphite cast irons were studied by a combined analysis of macro/micro-structure and cooling curve data. The correlation between the eutectic reaction parameter and macro/microstructure was systematically investigated. Two sets of chemical compositions with different Mn contents were designed to cast. Three types of molds for cylindrical specimens with different diameters were prepared to analyze the cooling rate effect. The difference between undercooling temperature and cementite eutectic temperature (${\Delta}T_1=T_U-T_{E,C}$), which is decreased by increasing the Mn content or increasing the cooling rate, is considered to be a suitable eutectic reaction parameter for predicting graphite morphology. According to the criterion, A-type graphite is mainly suggested to form for ${\Delta}T_1$ over $20^{\circ}C$, and D-type graphite is mainly suggested to form for ${\Delta}T_1$ below $0^{\circ}C$. Eutectic reaction time (${\Delta}T$), which is increased by increasing the Mn content and decreased by increasing the cooling rate, is regarded as a suitable eutectic reaction parameter for predicting eutectic cell size. Eutectic cell size is found to decrease in proportion to the decrease of ${\Delta}T$.

The Effect of Pressure on the Solvolysis of Benzylchlorides (II). p-Chlorobenzyl Chloride in Ethanol-Water Mixtures (염화벤질류의 가용매분해반응에 대한 압력의 영향 (제 2 보). 에탄올-물 혼합용매내에서 p-클로로 염화벤질의 분해반응)

  • Oh Cheun Kwun;Jin Burm Kyong
    • Journal of the Korean Chemical Society
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    • v.30 no.2
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    • pp.188-194
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    • 1986
  • The rate constants for the solvolysis reactions of p-chlorobenzyl chloride in ethanol-water mixtures were determinded at 30${\circ}\;and\;40{\circ}$C up to 1,600bar. Rates of reaction were increased with increasing temperature and pressure, and decreased with increasing solvent composition of ethanol mole fraction. The plots of ln k against pressure are fitted to a second-order function in P, and values of ${\Delta}V^{\neq}\;and\;${\Delta}{\beta}^{\neq}$ are obtained. The values of ${\Delta}V^{\neq}\;and\;${\Delta}{\beta}^{\neq}$ extremum behavior at about 0.20 mole fraction of ethanol. This behavior is discussed in terms of solvent structure variation. From the relation between the plots of ln k versus the solvent parameter, q ≡ (D-1)/(2D+1), or the logarithmic molar water concentration, In $C_w$, it could be estimated that the reaction proceeds through $S_N1(2)$ mechanism.

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Effect of Solvent on the Dispersion Stability of CaCO3 Pigment (CaCO3 안료의 분산 안정성에 대한 용제의 영향)

  • Lee, Gun Dae;Ryu, Young Cheal;Suh, Cha Soo;Hong, Seong Soo;Ahn, Byung Hyun;Moon, Myung Jun
    • Applied Chemistry for Engineering
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    • v.8 no.2
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    • pp.252-261
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    • 1997
  • The effect of solvent on the dispersion stability of $CaCO_3$ pigment in various solvents and resin solutions has been studied using Dynometer. Dispersion stability can be estimated in a relatively short time by means of Dynometer and the solubility parameter, ${\delta}$, of $CaCO_3$ determined from dispersion stability was 11.62(${\delta}_d=8.04$, ${\delta}_p=5.05$, ${\delta}_h=6.70$). The solvent showing weaker interaction with pigment increased the adsorption of resin on to the pigment, resulting in higher dispersion stability in resin solution. It was found that the rheological properties and dispersion stability of pigmented resin solution were depending strongly on the solvent added in small amount in the formulation.

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A Study on the Structure of Polarization Independent GaInAs/GaInAsP/InP Semiconductor Optical Amplifier (편광 비의존성 GaInAs/GaInAsP/InP 반도체 광 증폭기 구조에 관한 연구)

  • Park, Yoon-Ho;Kang, Byung-Kwon;Lee, Seok;Cho, Yong-Sang;Kim, Jeong-Ho;Hwang, Sang-Ku;Hong, Tchang-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.3 no.3
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    • pp.681-686
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    • 1999
  • In this study, the gain characteristics of the strained structures for SOA were calculated numerically and the optimized strained quantum well for the polarization-insensitive SOA was obtained. The structures used in this calculation were consisted of one, two, and three GaAs Delta layers respectively in the GaInAs(160 $\AA$) well. Moreover the third one was calculated by changing from one mono-layer to three mono-layers in the thichless of GaAs delta layers. This structure enhances the TM mode gain coefficient with good efficiency because the light-hole band is lifted up whereas the heavy-hole band is lowered down. Additionally, The structure of the 3 GaAs delta layers(1 mono layer thickness) shows 3dB gain bandwidth of 85nm in 1.55um wavelength system. This study is expected to be used in making a wide band and polarization-independent semiconductor optical amplifier practically.

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