• Bulletin of the Korean Chemical Society
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• v.23 no.6
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• pp.921-923
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• 2002

• Bulletin of the Korean Chemical Society
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• v.19 no.4
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• pp.484-486
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• 1998

• Bulletin of the Korean Chemical Society
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• v.19 no.2
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• pp.231-235
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• 1998

Two holmium β-diketonate complexes, Ho(hfa)3(H2O)2 (1) and [Ho(hfa)3(H2O)2](triglyme) (2), have been prepared and characterized by IR, TGA, and single-crystal X-ray analyses. These complexes show polymeric chains by the intermolecular hydrogen bondings. The donor atoms of the intermolecular hydrogen bonding in both complexes are hydrogen atoms of the coordinated water molecules. The acceptor atoms in 1 are the carbonyl oxygen atoms of β-diketonate ligands whereas those in 2 are oxygen atoms of the triglyme ligand. While compound 1 decomposes cleanly to Ho2O3, compound 2 sublimes intact. Crystal data for 1 and 2 are as follows: Ho(hfa)3(H2O)2 triclinic P1, a=10.158(4), b=11.628(2), c=12.579(6) Å, α=67.02(3)°, β=73.95(4)°, γ=76.12(2)°, V=1299.8(8) Å3. [Ho(hfa)3(H2O)2](triglyme), monoclinic P21/c, a=12.559(3), b=19.111(2), c=16.789(6) Å, β=110.59(4)°, V=3772(2) Å3.

• Journal of the Korean Chemical Society
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• v.37 no.9
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• pp.806-812
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• 1993

Complexes of $Cu(I)(hfac)PR_3$(P: phosphine and R: Me, Et and Bu) as Cu(I)(${\beta}$-diketonate) compounds have been synthesized and their electrochemical properties have been investigated using glassy carbon and carbon microelectrode in aprotic solvent. Reduction process of $Cu(I)(hfac)PR_3$ compounds carried out one electron pathway to Cu(0) by cyclic voltammetry in acetonitrile solution. Chronoamperometric curve using carbon microelectrode shows that these complexes are one electron process and diffusion coefficients are $4.5{\sim}6.7{\times}10^{-6}cm^2$/sec.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• Journal of the Korean Chemical Society
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• v.46 no.4
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• pp.389-393
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• 2002

• Bulletin of the Korean Chemical Society
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• v.26 no.10
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• pp.1620-1622
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• 2005

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.355-361
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• 1999

To improve the volatility and stability of lead complexes, the principle of stabilization by saturating the metal coordination sphere by intramolecular coordination through a β-diketonates with an ethereal group has was tested. Several new lead complexes with alkoxyalkyl-substituted β-diketonates, Pb(R1C(O)CHC(O)(CH2)3OR2)2(Rl=t-Bu, Me, OMe, i-Pr, R2=Me, Et), or carboxylate, Pb(OC(O)(CH2)3OEt)2, were prepared by the reaction between Pb(OAc)2 and corresponding alkoxyalkyl-substituted β-diketonates, and they were found to have a viscous liquid phase. The nature of the head (β-diketonate or carboxylate) or tails and substituents of β-diketonates appeared not to be important for the formation of the liquid phase. It is worth mentioning that Pb(OAc)2, which has limited use due to its low solubility, was successfully adopted as a starting material for the preparation of new lead complexes. Easy hydrolysis, reaction with HCl, and 13C NMR spectra indicated that tail portions were not coordinated to the metal as a copper derivative, Cu(t-BuC(O)CHC(O)(CH2)3OMe)2. All these complexes were not volatile enough for the MOCVD experiments, but a methyl derivative, Pb(MeC(O)CHC(O)(CH2)3OEt)2, showed some sublimation. The methoxy derivative, Pb(MeOC(O)CHC(O)(CH2)3OEt)2, was thermally unstable due to possible equilibrium between species coordinating with a keto oxygen atom and an ethereal atom of a methoxy group, which was confirmed by IR and 13C NMR spectra.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.153-158
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{\circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.750-757
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• 2002

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ thin films have been prepared by spin coating method using photosensitive sol solution. Strontium ethoxide, tertramethylheptanedionato bismuth and tantalum ethoxide were used as starting materials. As UV exposure time to the SBT thin film increased, the UV absorption peak intensity of metal ${\beta}$-diketonate decreased due to reduced solubility by M-O-M bond formation. Solubility difference by UV irradiation on SBT thin film allows to obtain a fine patterning of thin film. Also, The ferroelectric properties of the UV irradiated SBT thin films were superior to those of the no-UV irradiated films.