• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.894-896
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• 1999

The $\beta$-SiC+$ZrB_2$ ceramic composites were pressureless-sintered and annealed by adding 4, 8, 12wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at $1800^{\circ}C$ for 4h. The relative density is over 79.3% of the theoretical density and phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H, 4H), $ZrB_2$, $Al_{5}Y_{2}O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 301.33MPa for composites added with 8wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed the highest of $3.6979MPa{\cdot}m^{1/2}$ for composites added with 8wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.428-436
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• 1997

Hexacelsian ($BaO{\cdot}Al_2O_3{\cdot}2SiO_2$) powder was prepared by a solution-polymerization route employing PVA solution as a polymeric carrier. A fine amorphous-type hexacelsian powder with an average particle size of 0.8 $\mu \textrm{m}$ and a BET specific surface area of $63 \textrm{m}^2$/g was made by a ball-milling the powder precursor for 12 h after calcination at $800^{\circ}C$ for :1 h. A densified hexacelsian was obtained through sintering at $1550^{\circ}C$ for 2 h under an air atmosphere. The $\alpha\longleftrightarrow\beta$ and $\beta\longleftrightarrow\gamma$ displacive phase transformation in polycrystalline hexacelsia,n was examined by using dilatometry and differential scanning calorimtry. The reconstructive transformation between hexacelsian and celsian was obtained by annealing at $1600^{\circ}C$ for 72h. Volume contraction of 5.6% was accompanied by the reconstructive transformation.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.177-182
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• 2005

Large amounts of the waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of the single silicon crystal ingots. The waste SiC sludge was purified by the washing process and the purified SiC powders were used to fabricate continuously porous $SiC-Si_3N_4$ composites using a fibrous monolithic process, in which carbon, $6wt\%\;Y_2O_3-2\;wt\%\;A1_2O_3$ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives, and binder, respectively. In the burning-out process, carbon was fully removed and continuously porous $SiC-Si_3N_4$ composites were successfully fabricated. The green bodies containing SiC, Si particles and sintering additives were nitrided at $1410^{\circ}C$ in a flowing $N_2+10\%\;H_2$ gas mixture. Continuously porous composites were combined with SiC, ${\alpha}Si_3N_4,\;\beta-Si_3N_4$ and a few $\%$ of Fe phases. The pore size of the 2nd and the 3rd passed $SiC-Si_3N_4$ composites was $260\;{\mu}m$ and $35\;{\mu}m$ in diameter, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.72-75
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• 2000

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering were investigated, The ${\beta}-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 4, 8, 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 97% of the theoretical density and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. But the fracture toughness showed the highest of $7.0MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest of $1.59\times10^{-3}\Omega{\cdot}cm$ for composite added with 8wt% $Al_2O_3+Y_2O_3$ additives at room temperature and is all positive temperature coefficient resistance(PTCR} against temperature up to $700^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.511-516
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• 1992

In this study, SiC powder and Si powder were used as the raw materials. Mixture was prepared with addition of Al2O3 and Fe2O3 at 0.1~0.5wt% respectively. After this step, the mixture was pressed and nitrided for 30 hrs at 140$0^{\circ}C$ under NH3-N2 atmosphere. Mechanical properties of sintered specimens were investigated from measurement of porosity, bulk density and three point bending test. nitration reaction extent was observed at the change of mass before and after reaction, and the microstructure and the change of $\alpha$-Si3N4 and $\beta$-Si3N4 were observed by XRD and SEM. In the current work, the results are as follows 1. When Fe2O3 added, the nitridation increased with the content of Fe2O3, and the bending strength was increased from 0.1 wt% to 0.3 wt%, and decreased to 0.5 wt%. 2. When Al2O3 added, the nitridation and the bending strength increased little by little with the content of Al2O3 3. The bending strength of the specimen added with Fe2O3 were higher than that with Al2O3. Because the specimens contained Fe2O3 had much more the whisker type crystal of Si3N4 contributing to strength than contained Al2O3.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.53-59
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• 1985

Nucleation and crystallization of $\beta$-eucryptite in a glass of molecular percentage composition Li2O.Al2O3.2SiO2 are studied. The glasses are made by quenching of the melts from 143$0^{\circ}C$ to room temperature. Heat-treatment for nucleation and crystal growth are caried out at various temperature in the range between 50$0^{\circ}C$ and 80$0^{\circ}C$ with different duration of time. The amounts of crystallization are estimated by the method of x-ray powder diffraction. As the results a time-temperature-transformation relation for crystallization is derived. The maximum rate of crystallization is observed at about 75$0^{\circ}C$ from the T-T-T-curve while the crystallization temperature is detected at 67$0^{\circ}C$ by DTA measurement. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percents of TiO2 and it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percent of TiO2 it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5 The activation energy for crystallization from the pure glass is calculated as 68 Kcal/mol and it varied to 53 Kcal/mol and 110Kcal/mol when 5 weight percents of TiO2 and weight percents of V2O5 are added respectively.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1515-1516
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjection a 40:60(vol%) mixture of zirconium diborided ($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS) under argon atmosphere. Inner diameters of graphite mold were $15mm{\varphi}$ and $20mm{\varphi}$, respectively. The relative densities of $15mm{\varphi}$ and $20mm{\varphi}$ sample were 99.4% and 97.88%, respectively. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The result of FE-SEM of fracture face of $15mm{\varphi}$ sample was intergranular fracture and that of $20mm{\varphi}$ sample was transgranular fracture. Because the fracture strength of $15mm{\varphi}$ sample was much higher than that of $20mm{\varphi}$ sample. The electrical resistivity, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$ of $15mm{\varphi}$ sample was higher than that, $6.17{\times}10^{-4}{\Omega}{\cdot}cm$ of $20mm{\varphi}$ sample because of densification. Although sintering condition of SPS is same. the properties of sintered SiC-$ZrB_2$ compacts were changed according to inner diameter of graphite mold.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.6
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• pp.1943-1948
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• 2010

Two kind of $\beta$-SiC powders of different particle sizes (${\sim}1.7\;{\mu}m$ and ${\sim}30\;nm$), containing 7 wt% $Y_2O_3$, 2 wt% $Al_2O_3$ and 1 wt% MgO as sintering additives, were prepared by hot pressing at $1800^{\circ}C$ for 1 h under applied pressures, and then were hot-forged at $1950^{\circ}C$ for 6 h under 40 MPa in argon. All the hot-pressed specimens consisted of equiaxed grains and were developed grain growth after hot-forging. The smaller starting powder was developed the finer microstructure. The microstructures on the surfaces parallel and perpendicular to the pressing direction of the hot-forged SiC were similar to each other, and no texture development was observed because of the lack of massive $\beta$ to $\sigma$ phase transformation of SiC. The fracture toughness (${\sim}3.9\;MPa{\cdot}m^{1/2}$), hardness (~ 25.2 GPa) and flexural strength (480 MPa) of hot-forged SiC using larger starting powder were higher than those of the other.