• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.79-83
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• 2009

The glass-ceramic of the $Li_{2}O-Al_{2}O_{3}-SiO_{2}$ system was investigated to develop the low thermal expansion materials. The glass of this system was heat treated at $775^{\circ}C$ for 2 h for nucleation and subsequently at $825{\sim}900^{\circ}C$ for 2 h for crystallization. The crystal structure of the glass-ceramic of this system was a single phase of $\beta$-quartz solid solution($Li_{x}Al_{x}Si_{1-x}O_{2}$). The thermal expansion of the glass-ceramic showed $4.40{\times}10^{-7}{\sim}1.33{\times}10^{-6}K^{-1}$ between $25{\sim}300^{\circ}C$ and $1.56{\times}10^{-6}{\sim}2.53{\times}10^{-6}K^{-1}$ between $25{\sim}800^{\circ}C$, higher than lower temperature range. The mechanical strength remained almost same at around high 110 MPa with heating temperature changes.

• Journal of Powder Materials
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• v.6 no.1
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• pp.111-118
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• 1999

Ni(Fe)Al powders containing a homogeneous distribution of the in-situ formed AIN and $Al_2O_3$ dispersoids have been produced by mechanical alloying process in a controlled atmosphere using high energy attrition mill. The powders have been successfully consolidated by hot extrusion process. The phase information investigated by TEM and XRD analysis reveals that Fe can be soluble up to 20% to the NiAl phase ($\beta$) at room temperature after MA process. Subsequent thermomechanical treatment under specific condition has been tried to induce secondary recrystallization (SRx) to improve high temperature properties, however, the clear evidence of SRx was not obtained in this material. Mechanical properties in term of strength at room temperature as well as at high temperatures have been improved by the addition pf AIN, and the room temperature ductility has been shown to be improved after heat treatment, presumably due to the precipitation of second phase of $\alpha$ in this material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.157-161
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• 2000

Blue phosphor of Ba-Mg-Al-O:Eu$^{2+}$ phase was fabricated by conventional firing techniques under reducing atmosphere and its photoluminescence properties are studied with varying Eu concentration and phost-annealing temperature under air atmosphere. This phosphors were well crystallized with particle size in the range of 3~5um and emitted a blue light at a dominent wavelength 450nm for 254nm UV irradiation. The concentration quenching wit Eu$^{2+}$ was that with increasing Eu concentration the energy transfer between the activator ions steadily improves, so that the excitation energy is transported over larger distances through the lattice before luminescence can occur. Thermal quenching also occurred in this phosphor means that in a host lattice with the $\beta$-alumina structure the bond of an Eu$^{2+}$ ion with the nearest-neighbour oxygen ion is much stronger than in a lattice with the magnetoplumbite structure.cture.

• Archives of Pharmacal Research
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• v.25 no.6
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• pp.831-836
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• 2002

A new and two known lupane-triterpene glycosides were isolated from the hot MeOH fraction of the leaves of Acanthopanax gracilistylus W. W. Smith. Based on the physical properties and spectroscopic data, their chemical structures were determined as acankoreoside A (1), acankoreoside D (2), and $3{\alpha}-hydroxy-lup-23-al-20(29)-en-28-oic$ acid $28-O-{\alpha}-L-rhamnopyranosyl-(1{\rightarrow}4)-{$beta}-D-glucopyranosyl-(1{\rightarrow}6)-{\beta}-D-glucopyranosyl$ ester (3), respectively. To our best knowledge, compand 3 appears to be novel, which was named as wujiapioside A.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.259-270
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• 1997

Reaction kinetics for the solid-state reaction of $\alpha-Al_2O_3$ with amorphous $TiO_2$ to produce $Al_2TiO_5$ (Tialite) was studied in the temperature range of $1200~1300^{\circ}C$. Rate of kinetic reaction were determined by using $TiO_2$-coated $Al_2O_3$ compact containing 50 mol% $TiO_2$ and heating the reactant mixtures in MgO at definite temperature for various times. Amount of products and unreacted reactants were determined by X-ray diffractometry. Data from the volume fraction and ratio of peak intensities of $\beta-Al_2TiO_5$ indicated that the reaction of $\alpha-Al_2O_3$ with $TiO_2$ to form pseudobrookite starts between 1280 and $1300^{\circ}C$. The activation energy for solid-state reaction was determined by using the Arrhenius equation ; The activation energy was 622.4 kJ/mol.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.453-460
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• 1987

β'-sialon(Z=2.7) specimens with <30%wt. graphite as a reducing agent were decomposed at 1350°up to 1,450℃ under the atmosphere of 90% N2-10%H2. The decomposition of β'-sialon was calculated from the change in Z-value, and the formation of new minerals was identified from X-ray diffraction patterns. The decomposition reactions of sialon were considered to yield a stable sialon close to β-silicon nitride and some aluminum compounds according to the following equations; β'-sialon(s)＋C(s)＋N2(g)→β2-sialon(metastable)＋β3-sialon(stalbe phase) β2-sialon(s)＋C(s)＋N2(g)→β3-sialon(s)＋AlN(s)＋α-Al2O3(s)＋15R(s)＋SiO(g)＋Al2O(g)＋CO(g) Z-value; β2( 3.5)>β'( 2.7)>β3( 0.5) The decomposition rate of sialon was controlled by two mechanisms ; One was characterized by the interface area of contact, corresponding to an apparent activation energy of 50.5Kcal/mol in the initial stage, and the other by the diffusion, corresponding to that of 104.3Kcal/mol in the final stage of the decomposition.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2207-2212
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• 2012

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.385-391
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• 2009

Need for plasma resistant ceramic materials has been continuously increased in semiconductor and display industry requiring plasma processing to realize ultra fine circuit process. Among promising candidates, alumina ceramics have still some advantages with respect to its economic aspect. In this study, fabrication of plasma resistant alumina ceramics was tried, and its processing optimization was also aimed. Careful processing control and thereby uniform microstructure of $Al_2O_3$ gave rise to enhanced plasma resistance, even comparable to market-governing commercial $Al_2O_3$. A further study is needed concerning ${\beta}-Al_2O_3$ materials system, presumably playing a decisive role in decreasing plasma resistance of $Al_2O_3$ ceramics.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1436-1438
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• 2001

The $\beta$-SiC + $ZrB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3$ + $Y_2O_3$ (6 : 4wt%) powder as a function of sintering temperature. The relative density showed the highest value of 81.1% at 1900$^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest value of 230 MPa for composites sintered at 1900$^{\circ}C$. The vicker's hardness and the fracture toughness showed the highest value of increased with increasing sintering temperature and showed the highest of 9.88 GPa and 6.05 $MPa{\cdot}m^{1/2}$ at 1900$^{\circ}C$. The electrical resistivity was measured by the Pauw method from 25$^{\circ}C$ to 700$^{\circ}C$. The electrical resistivity of the composites showed the PTCR (Positive Temperature Coefficient Resistivity).

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.152-156
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• 1996

Fine (~0.09 $\mu$m) $\beta$-SiC Powders with 3.3wt% of large (~0.44$\mu$m) $\alpha$-SiC of $\beta$-SiC particles (seeds) added were hotpressed at 175$0^{\circ}C$ using $Y_2O_3$, $Al_2O_3$ and CaO as sintering aids and then annealed at 185$0^{\circ}C$ for 4 h to enhance grain growth. The resultant microstructure and polytypes were analyzed by high resolution electron microscopy (HREM).Growth of $\beta$-SiC with high density of microtwins and formation of ${\alpha}/{\beta}$ composite grains consisting of $\alpha$-SiC domain sandwiched between $\beta$-SiC domains were found in both specimens. When large $\alpha$-SiC (mostly 6H) seeds were added, the $\beta$-SiC transformend preferentially to the 6H polytype. In contrast, when large $\beta$-SiC (3C) seeds were added, the fine $\beta$-SiC transformed preferentially to the 4H polytype. Such results suggested that the polytype formation in SiC was influenced by crystalline form of seeds added as well as the chemistry of sintering aids. The ${\alpha}/{\beta}$ interface played and important role in the formation of elongated grains as evidenced by presence of ${\alpha}/{\beta}$ composite grains with high aspect ratio.