• Title/Summary/Keyword: $^{64}Cu$

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Brightness Improvement of ZnS:Cu Powder Electroluminescence by Mixed Layer

  • Lee, Jong-Chan;Park, Dae-Hee
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.2
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    • pp.64-67
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    • 2004
  • In this paper, to discover the brightness improvement of ZnS:Cu powder electroluminescence (EL), a new structure is proposed in which phosphor and dielectric are mixed between electrodes. Dielectric and phosphor material are BaTiO$_3$ and ZnS:Cu, respectively. The effect of the mixed layer on EL sample is considered the improvement of source efficiency. Although the number of electrons introduced into the phosphor increases only modestly, the high electric field region of phosphor grains increases comparatively in the characteristics of brightness-voltage. Furthermore, the relaxation occurs through leading and trailing edge pairs, which is relatively efficient in characteristics of decay time. With these results, we found that the brightness of newly proposed ZnS:Cu powder electroluminescence was 167.24 cd/$m^2$ at ac voltage of 100V and frequency of 400Hz.

Development of prepareation technology of materials for high temperature electrolysis (고온수전해용 전극물질 개발)

  • Seo, Min-Hye;Hong, Hyun-Seon;Kang, Kyoung-Hoon;Kim, Jong-Min;Lee, Sung-Koo;Yun, Yong-Seung
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.61-64
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    • 2007
  • Ni/YSZ ($Y_{2}O_{3}-stabilized$ $ZrO_{2}$), Cu/YSZ and CuO/YSZ composite powder for a cathode material in high temperature electrolysis (HTE) was synthesized by a mechanical alloying method with Ni (or Cu, CuO, Co) and YSZ powder. Microstructure of the composite for HTE reaction has been analyzed with various techniques of XRD, SEM to investigate effects of fabrication conditions. And conductivity of electrode was measured, Cu/YSZ cermet showed the higher electrical conductivity value than Ni/YSZ.

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The Effects of Dielectric Passivation Overlayers for Submicron Thin Film Metallizations of ULSI Semiconductor Devices (초고집적 Submicron 박막금속화를 위한 Dielectric Overlayer의 Passivation 효과)

  • 김대일;김진영
    • Journal of the Korean Vacuum Society
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    • v.3 no.1
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    • pp.59-64
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    • 1994
  • 극소전자 디바이스의 고집적화와 더불어 박막배선의 선폭은 0.5$\mu$m이하까지 축소되며 초고집적 submicron 박막금속화가 진행되고 있다. 미세회로에 적용되어지는 배선재료는 인가되는 고전류밀도로 인하여 electromigration 에 의한 결함이 쉽게 발생한다는 단점이있다. 금속박막 전도체위의 dielectric overlayer는 electromigration 에 대한 passivation 효과를 보여 극소전자 디바이스의 평균수명을 향상시 킨다.본 연구에서는 박막금속화에서 dielectric overlayer의 passivation 효과를 알아보기 위하여 약 3000 $\AA$ 두께의 Al,Al-1%Si, Ag 그리고 Cu 박막배선위에 증착하여 SiO2절연보호막의 유무에 따른 박막배선 의 수명변화 및 신뢰도를 측정하였다. 박막배선에 인가된 전류밀도는 1x106 A/cm2와 1x107 A/cm2 이었다. SiO2 dielectric overlayer는 Al,Al-1%Si Ag. Cu 박막배선에서는 electromigration에 대한 보호막 혀과를 보이며 평균수명을 모두 향상시킨다. SiO2 passivation 효과는 Al, Ag, Cu 박막중 Cu 박막배선에서 가 장 크게 나타났다. SiO2 dielectric overlayer가 형성되지 않은 경우 Al 박막배선의 수명이 가장 긴 것으 로 나타났으나 SiO2 가 형성된 경우는 Cu 박막배선의 수명이 가장 길게 나타났다.

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Effect of Ag Nanolayer in Low Temperature Cu/Ag-Ag/Cu Bonding (저온 Cu/Ag-Ag/Cu 본딩에서의 Ag 나노막 효과)

  • Kim, Yoonho;Park, Seungmin;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.2
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    • pp.59-64
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    • 2021
  • System-in-package (SIP) technology using heterogeneous integration is becoming the key of next-generation semiconductor packaging technology, and the development of low temperature Cu bonding is very important for high-performance and fine-pitch SIP interconnects. In this study the low temperature Cu bonding and the anti-oxidation effect of copper using porous Ag nanolayer were investigated. It has been found that Cu diffuses into Ag faster than Ag diffuses into Cu at the temperatures from 100℃ to 200℃, indicating that solid state diffusion bonding of copper is possible at low temperatures. Cu bonding using Ag nanolayer was carried out at 200℃, and the shear strength after bonding was measured to be 23.27 MPa.

Removal Characteristics of Cu(II) by PSf/D2EHPA/CNT Beads Prepared by Immobilization of Carbon Nanotubes (CNT) and Di-(2-ethylhexyl)-phosphoric acid (D2EHPA) on Polysulfone (PSf) (Polysulfone으로 carbon nanotubes (CNT)와 di-(2-ethylhexyl)-phosphoric acid (D2EHPA)를 고정화한 PSf/D2EHPA/CNT 비드에 의한 Cu(II)의 제거특성)

  • Lee, Chang-Han;Lee, Min-Gyu
    • Journal of Environmental Science International
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    • v.25 no.11
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    • pp.1485-1491
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    • 2016
  • PSf/D2EHPA/CNT beads were prepared by immobilizing di-(2-ethylhexyl)-phosphoric acid (D2EHPA) and carbon nanotubes (CNT) on polysulfone (PSf) and used to remove Cu(II) from aqueous solutions. Optimum pH was in the range of 4 to 6. The removal kinetic of Cu(II) by the prepared PSf/D2EHPA/CNT beads was mainly governed by internal diffusion, and the diffusion coefficient of Cu(II) by PSf/D2EHPA/CNT beads was found to be $2.19{\times}10^{-4}{\sim}2.64{\times}10^{-4}cm^2/s$. The Langmuir isotherm model predicted the experimented data well. The maximum removal capacity of Cu(II) obtained from this isotherm was 7.32 mg/g. Calculated thermodynamic parameters such as ${\Delta}G^o$, ${\Delta}H^o$ and ${\Delta}S^o$ showed that the adsorption of Cu(II) ions onto PSf/D2EHPA/CNT beads was feasible, spontaneous and endothermic at 293-323 K.

A Study on the Copper Metallizing Method of $Al_2$O$_3$ Ceramic Surface (알루미나(Al$_2$O$_3$) 세라믹 표면의 강메탈라이징법에 관한 연구)

  • ;;Choi, Y. G.;Kim, Y. S.
    • Journal of Welding and Joining
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    • v.13 no.3
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    • pp.55-64
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    • 1995
  • Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.

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Biological Treatment of Nutrients and Heavy Metals in Synthetic Wastewater Using a Carrier Attached to Rhodobacter blasticus

  • Kim, Deok-Won;Park, Ji-Su;Oh, Eun-Ji;Yoo, Jin;Kim, Deok-Hyeon;Chung, Keun-Yook
    • Applied Chemistry for Engineering
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    • v.33 no.6
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    • pp.666-674
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    • 2022
  • The removal efficiencies of nutrients (N and P) and heavy metals (Cu and Ni) by Rhodobacter blasticus and R. blasticus attached to polysulfone carriers, alginate carriers, PVA carriers, and PVA + zeolite carriers in synthetic wastewater were compared. In the comparison of the nutrient removal efficiency based on varying concentrations (100, 200, 500, and 1000 mg/L), R. blasticus + polysulfone carrier treatment showed removal efficiencies of 98.9~99.84% for N and 96.92~99.21% for P. The R. blasticus + alginate carrier treatment showed removal efficiencies of 88.04~97.1% for N and 90.33~97.13% for P. The R. blasticus + PVA carrier treatment showed removal efficiencies of 18.53~44.25% for N and 14.93~43.63% for P. The R. blasticus + PVA + zeolite carrier treatment showed removal efficiencies of 26.65~64.33% for N and 23.44~64.05% for P. In addition, at the minimum inhibitory concentration of heavy metals, R. blasticus (dead cells) + polysulfone carrier treatment showed removal efficiencies of 7.77% for Cu and 12.19% for Ni. Rhodobacter blasticus (dead cells) + alginate carrier treatment showed removal efficiencies of 25.83% for Cu and 31.12% for Ni.

Real-time Monitoring of Cu Plating Process for Semiconductor Interconnect

  • Wang, Li;Jee, Young-Joo;Soh, Dae-Wha;Hong, Sang-Jeen
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.64-64
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    • 2009
  • As the advanced packaging technology developing, Copper electro-plating processing has be wildly utilized in the semiconductor interconnect technique. Chemical solution monitoring methods, including PH and gravity measurement exist in industry, but economical and practical real-time monitoring has not been achieved yet. Red-green-blue (RGB) color sensor can successfully monitor the condition of $CuSO_4$ solution during electric copper plating process. Comparing the intensity variations of the RGB data and optical spectroscopy data, strong correlation between two in-situ sensors have shown.

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Synthesis and evaluation of metal purine-type complexes for lung cancer imaging

  • Kang, Kyeung Jun;Ko, In Ok;Park, Ji-Ae;Kim, Jung Young
    • Journal of Radiopharmaceuticals and Molecular Probes
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    • v.5 no.1
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    • pp.61-68
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    • 2019
  • Purine type compounds has been recently reported to cause the death for lung cancer cell, related to microtubules-targeting agents (MTAs). Therefore it can be used to develop as theranostic radiopharmceuticals in nuclear medicine or gadolinium-based MRI imaging agents by chelate chemistry. In the study, we tried to chemically bind a DOTA chelate on the end of purine compound and obtained a specific conjugate of DOTA-purine for metal coordination. In particular, radiometal like Cu-64, for the development of MRI imaging agents, can be utilized to choice good candidates before the synthesis of gadolinium complexes. By the screening of radioisotope technique, Gd-DOTA-purine type complex was successfully prepared and showed MRI imaging for lung cancer cell into the mouse model.