• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.143.2-143.2
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• 2016

The influence of electric field on CO adsorbed on Pt(111) was investigated with reflection-absorption infrared spectroscopy (RAIRS) in ultrahigh vacuum system. The ice film capacitor method was used to apply electric field to the amorphous ice film with CO on Pt(111). Two systems were compared by measuring the change of the CO stretching vibrational mode under applied electric field; one is CO on Pt(111), and the other is CO buried inside an ice film on Pt(111). By comparing them, we were able to calculate the additional effect of adsorption of CO on Pt(111) on peak shift. The CO adsorbed on Pt(111) has shown larger peak shift than CO adsorbed with H2O when we applied stronger electric field. Additionally, the differences were observable when the applied electric field exceeds $1{\times}10V/m^8$.

• Journal of the Korean Vacuum Society
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• 제6권2호
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• pp.159-164
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• 1997

We have studied initial oxidation of the alkali metal(AM)/Si(111) surface using X-ray photoelectron spectroscopy(XPS) and reflection high energy electron diffraction(RHEED) at room temperature(RT) and high temperature(HT)(300~50$0^{\circ}C$). The oxidation of the Si(111)7$\times$7 surface was promoted by the adsorption of 1 momolayer(ML) AM, whereas no promotion occurred for submonolayer(<0.5 ML) adsorbed Si(111)7$\times$7 surface at RT. O Is core level spectra were measured with increasing oxygen exposure. It was found that the oxygen adsorbed on the Si(111)7$\times$7-AM surface have two different bond configuration, Si-O and Am-O, respectively. From these results, we discussed the role of AM-O bonding in the promoted oxidation. At HT(300~50$0^{\circ}C$), the AM-adsorbed surface became very inactive with the structural transformation to the 3$\times$1-AM. We present the results of the oxidation of the Si(111)3$\times$1-AM(Na, K, Cs) surface.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.174-174
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• 2003

Highly (111)-oriented PZT [Pb(Zrl-xTix)O3] thin films in the Zr-rich rhombohedral phase-field were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by combining PLD method with sol-gel process. These highly (111)-oriented films can be used as model systems for polarized Raman scattering study of PZT in the rhombohedral-Phase field because the (111)-direction is the principal off-center axis of the rhombohedral ferroelectricity. For this purpose, we have fabricated PZT films employing two distinctive compositions : one with Zr/Ti = 90/10 (abbreviated as PZT90/10) and the other with Zr/Ti= 60/40 (PZT60/40). The PZT90/10 film belongs to the octahedrally distorted FR(LT) phase with a cell-doubled structure, whereas the PZT60/40 is in the high-temperature FR(HT) phase-field at room temperature. To clearly separate E(TO) phonon modes from Al(TO) modes of the (111)-oriented rhombohedral film, we have suitably devised Z(X,Y)Z and Z(X,X)Z backscattering geometries for E(TO) and Al (TO), respectively. The polarized scattering experiment demonstrated that both types of (111)-oriented rhombohedral films closely followed the Raman selection rule.

• Journal of the Korean Electrochemical Society
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• 제5권3호
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• pp.111-116
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• 2002

Electrochemical scanning tunneling microscopy was employed to study the evolution of surface morphology during electrochemical preparation of Si(111)-H from Si(111) oxide. Anodic dark current of cyclic voltammogram in 0.2M $NH_4F$ solution (pH 4.7) decreased as the number of cycles increased and remained nearly constant after the second cycle. Then, the Si(111) oxide was entirely stripped, which was followed by H termination on the Si(111) surface. Hydrides at kink and step sites were etched more rapidly than on the terrace, which remained triangle pits with [112] oriented steps where existed stable monohydride. Then, triangle pits deepened. During chronomamperometry at 0.4V anodic dark current shoulder appeared and decreased slowly, indicated the stripping of Si(111) oxide and the formation of stable (112) oriented steps with monohydride. Additionally, the etching mechanism of Si(111)-H in 0.2M $NH_4F(pH 4.7)$ solution at +0.4V was discussed.

• Journal of the Korean Graphic Arts Communication Society
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• 제22권2호
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• Bulletin of the Korean Chemical Society
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• 제27권3호
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• pp.403-406
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• 2006

The surface structure and electrochemical behavior of self-assembled monolayers (SAMs) formed by aromatic thiols on Au(111) were investigated by scanning tunneling microscopy (STM) and cyclic voltammetry. Benzenethiol (BT) forms disordered phases on Au(111) which are composed of many bright domains, while benzyl mercaptan (BM), with a methylene unit between the aromatic group and sulfur atom, forms twodimensional ordered SAMs on Au(111). In addition, two phase-separated domains consisting of disordered and ordered phases were observed in binary SAMs formed from a 1 : 1 mixed ethanol solution of BT and BM. From STM and CV measurements, we found that the blocking efficiency of aromatic thiol SAMs coated on an Au(111) electrode for an electron transfer reaction decreases as the structural order of the SAMs increases. Molecular-scale STM and CV results obtained here will be very useful in designing functional SAMs for further applications, such as the improvement of corrosion passivation of Au(111) on an aromatic thiolmodified Au(111) surface.

• Proceedings of the KWS Conference
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• 대한용접접합학회 2001년도 추계학술발표대회 개요집
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• pp.108-111
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• 2001

• Journal of the Korea Institute of Information and Communication Engineering
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• 제10권9호
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• pp.1663-1670
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• 2006

Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.

• Journal of Magnetics
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• 제9권4호
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• pp.116-120
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• 2004

Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

• Journal of the Korean Vacuum Society
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• 제6권2호
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• pp.172-176
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• 1997

The change of surface structures for the deposition of indium on clean Si(111) surface is investigated as a function of substrate temperature and surface coverage by RHEED. We find that at substrate temperature of $400^{\circ}C$, $\sqrt{3}\times\sqrt{3},\sqrt{31}\times\sqrt{31},4\times 1$ structures are formed at indium coverages of 0.2, 0.3 and 0.5 ML, respectively. We also find that for the substrate temperature of $300^{\circ}C$, 4$\times$1 structure starts to be forme by 0.2 ML of indium, and the mixed structure of 4$\times$1 and $\sqrt{3}\times\sqrt{3}$is observed for more than 1.0 ML. On the other hand, if the indium is deposited on the Si(111)-$\sqrt{3}\times\sqrt{3}$ structure at room temperature, $2\times2\; and\;\sqrt{7}\times\sqrt{3}$ structures are found to form at 0.2 and 0.4 ML, respectovely. From the desorption process, the desorption energy of indium in Si $\sqrt{7}\times\sqrt{3}$ structure is observed to be 2.84 eV.