• Korean Journal of Materials Research
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• v.3 no.3
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• pp.230-236
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• 1993

We have the homoepitaxiallayers on the surfaces of Si(111) with and without the adsorbed surfactants, for example, Ag or Sn. In this paper, We have studied the difference of growth for these two cases by the observation of intensity oscillations of RHEED specular spots during the growing processes. In the case of growth without the adsorbed surfactants, the Si atoms fill first the stacking fault layer of Si(111) 7 ${\times}$7 structure. Therefore, the irregular oscillations are observed in the early stage of growing process. However, in the case of growth with the adsorbed surfactants, the surfactants already have the ${\sqrt}{3}$ ${\times}$ ${\sqrt}{3}$ structures on the surfaces of Si(111) at the adjucate temperatures of 300`$600^{\circ}C$ and 190~$860^{\circ}C$ for the surfactants of Ag and Sn, respectively. We also find that the number of oscillations is a little larger for the case of growth with the adsorbed surfactants. The reason for this is that for the case of growth with the adsorbed surfactants, the activation energies of Si atoms decrease due to the segregation of surfactants toward the growing surfaces.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.77-81
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• 1998

The eptiaxial growth of Ge on the clean and surfactant (Sn) adsorbed surface of Ge(111) was studied by the intensity oscillation of a RHEED specular spot. In the case of epitaxial growth without the adsorbed surfactant, the RHEED intensity oscillation was stable and periodic up to 24 ML at the substrate temperature of $200^{\circ}C$. Therefore the optimum temperature for the epitaxial growth of Ge on clean Ge(111) seems to be $200^{\circ}C$. However, in the case of epitaxial growth with the adsorbed surfactant, the irregular oscillations are observed in the early stage of the growth. The RHEED intensity osicillation was very stable and periodic up to 38 ML, and the d2$\times$2 structure was not charged with continued adsorption of Ge at the substrate temperature of 2002$\times$2. These results may be explained by the fact that the diffusion length of Ge atoms is increased by decreasing the activation energy of the Ge surface diffusion, resulted by segregation of Sn toward the growing surface.

• IMMUNE NETWORK
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• v.13 no.4
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• pp.111-115
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• 2013

Recent investigations have demonstrated extensive reciprocal interactions between the immune and skeletal systems, resulting in the establishment of osteoimmunology as a cross-disciplinary field. Here we highlight core concepts and recent advances in this emerging area of study.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.441-444
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• 2009

The formation and structure of self-assembled monolayers (SAMs) by the adsorption of acetyl-protected octylthioacetate (OTA) on Au(111) in a catalytic tetrabutylammonium cyanide (TBACN) solution were examined by means of scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV). Molecular-scale STM imaging revealed that OTA molecules on Au(111) in a pure solvent form disordered SAMs, whereas they form well-ordered SAMs showing a c(4 × 2) structure in a catalytic TBACN solution. XPS and CV measurements also revealed that OTA SAMs on Au(111) formed in a TBACN solution have a stronger chemisorbed peak in the S 2p region at 162 eV and a higher blocking effect compared to OTA SAMs formed in a pure solvent. In this study, we clearly demonstrate that TBACN can be used as an effective deprotecting reagent for obtaining well-ordered SAMs of thioacetyl-protected molecules on gold.

• Korean Journal of Crystallography
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• v.7 no.2
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• pp.156-164
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• 1996

The atomic configurations of GaAs ∑19, {331}/{331} [110] and ∑3 {111}/{111} [110] tilt grain boundaries were investigated by HRTEM (High-resolution Transmission Electron Microscopy). The boundary planes lie parallel to the crystallographic planes with high number density of coincident lattice sites for given misorientations, exhibiting particular atomic structural units. Secondary boundary dislocations with a core diameter of about 2nm were observed at boundary steps when a slight deviation from exact ∑-related misorientations occurs in the bicrystal system. The relation between the secondary boundary dislocation and the boundary step was discussed based on a DSC lattice model.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.205-205
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• 2011

The self-assembly of ${\gamma}$-phenylalanine on Au(111) at 150 K was investigated using scanning tunneling microscopy (STM). Phenylalanine can potentially form two-dimensional (2D) molecular networks through hydrogen bonding (through the carboxyl and amino groups) and ${\pi}-{\pi}$ stacking interactions (via aromatic rings). We found that ${\gamma}$-phenylalanine molecules self-assembled on Au(111) surfaces into well-ordered structures such as ring-shaped clusters (at low and intermediate coverages) and 2D molecular domains (intermediate and monolayer coverages), whereas ${\alpha}$-phenylalanine molecules formed less-ordered structure on Au(111). The self-assembly of ${\gamma}$- but not ${\alpha}$-phenylalanine may be related to the flexibility of the carboxyl and amino groups in the molecule. Moreover, as expected, the 2D molecular network of ${\gamma}$-phenylalanine on Au(111) was mediated by a combination of hydrogen bonding and ${\pi}-{\pi}$ stacking interactions.

• Analytical Science and Technology
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• v.8 no.4
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• pp.723-730
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• 1995

Cyclic voltammetry and in situ STM were employed to examine the interfacial structures of a Pt(111) electrode in 0.1 mM KCN (pH9.5) and 0.1 mM KSCN (pH7) solutions. In situ STM atomic resolution revealed well ordered (2${\surd}$3${\times}$2${\surd}$3)$R30^{\circ}$-6CN and ($2{\times}2$)-2SCN structures within the double layer charging region. Six CN adsorbates formed a hollow hexagon, which embraced a coadsorbed $K^+$ cation. In contrast, the coadsorbed $K^+$ cations on the SCN covered Pt(111) were poorly ordered, despite adsorbed SCN formed a long range ordered ($2{\times}2$)-2SCN adlattice. In situ STM revealed the pronounced influence of potential in controlling the structures of compact layers at the proximity of a Pt electrode. Cathodic polarization facilitated the replacement of the coadsorbed cations by protons.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.22-26
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• 2001

Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.133-141
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• 1998

Stainless is widely used for various purposes due to its good corrosion resistance. There has been much research to produce the color stainless steel by several methods. In this experiment, TixN films have been deposited on the SUS304 substrate by the DC magnetron sputtering system and the color and texture of the films as a function of coating conditions has been studies. The TixN films showed a (111) preferred orintation in bias-free conditions. The texture of coated later was changed from (111) to (200) to (2200 with a change of the bias from -1000V to -3000V. When the bias is low, coated elements have low energy. Therefore, the texturct (111) of low surface energy. The mobility of atoms was increased with the increase of the blas and texture was changed to the other plane. Non-etched specimens all exhibited strong (111) texture. This result shows that (111) is a loose plane and of non-etched specimens all exhibited. High growing velocity of (111) of especially was main texture of Non-etched specimens. Low working pressure($4\times10^{-3}$torr) was more effective than figh working pressure ($6\times10^{-3}$torr) for the gold color of $Ti_xN$ film. L and b were increased and a was decreased with the increase of bias voltage. Accordingly, We obtained the near gold color of $Ti_xN$ film(L;92, a;1~1.5 b:24~29.50. As a result of reflectance. And as the bias increased, the reflectance was proportional to the increasing bias voltage, but we took the top reflectance when the bias voltage was -200V.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.82-88
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• 2003

The bonding phenomenon and mechanism in the transient liquid phase bonding(TLP Bonding) of directionally solidified Ni base superalloy, GTD-111 was investigated. At the bonding temperature of 1403K, liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B and Si into the base metal and solids in the bonded interlayer grew epitaxially from mating base metal inward the insert metal. The number of grain boundaries formed at the bonded interlayer was corresponded with those of base metal. The liquation of grain boundary and dendrite boundary occurred at 1433K. At the bonding temperature of 1453K which is higher than liquation temperature of grain boundary, liquids of the Insert metal were connected with liquated grain boundaries and compositions in each region mixed mutually. In Joints held for various time at 1453t phases formed at liquated grain boundary far from the interface were similar to those of bonded interlayer. With prolonged holding time, liquid phases decreased gradually and liquids of continuous band shape divided many island shape. But liquid phases did not disappeared after holding for 7.2ks at 1453k. Isothermal solidification process at the bonding temperature which is higher than the liquation temperature of the grain boundary was controlled by diffusion of Ti to be result in liquation than B or Si. in insert metal. (Received January 15, 2003)