• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1117-1122
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• 1999

Amorphous Si and Co/Ti bilayers were sequentially evaporated onto 5- 10nm thick $\textrm{CoSi}_{2}$ and rapidly thermal-annealed(RTA) to form Co-polycide electrodes. Then, MOS capacitors were fabricated by doping poly-Si using SADS method. The C-V and leakage-current characteristics of the capacitors depending upon the RTA conditions were measured to study the effects of thermal stability of $\textrm{CoSi}_{2}$ and dopant redistribution on electrical properties of Co -polycide gates. Capacitors RTAed at $700^{\circ}C$ for 60-80 sec., showed excellent C-V and leakage-current characteristics due to degenate doping of poly-Si layers. But for longer time or at higher temperature, their electrical properties were degraeded due to $\textrm{CoSi}_{2}$ decomposition and subsequent Co diffusion. When making Co-polycide gate electrodes by SADS, not only degenerate doping of poly-Si layer. but also suppression of have been shown to be very critical.

• Korean Journal of Materials Research
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• v.7 no.12
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• pp.1027-1032
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• 1997

본 연구에서는 용사용WC-17%Co 복합분말을 분무건조법으로 제조하고 열처리 온도(85$0^{\circ}C$, 100$0^{\circ}C$, 115$0^{\circ}C$, 130$0^{\circ}C$)에 따른 조립분말의 미세구조, 입도분포, 유동도, 및 결정상변화를 고찰하였다. 분무건조상태의 입형은 구형이었으며, 입도분포, 평균입자크기, 유동성은 각각 20.6-51.7$\mu\textrm{m}$, 27.2$\mu\textrm{m}$, 0.26 sec/g 이었다. 열처리에 의하여 조립분말은 치밀화되어 130$0^{\circ}C$ 열처리 후에는 입도분포와 평균입자크기가 각 각 6.9-37.9$\mu\textrm{m}$과 17.8$\mu\textrm{m}$로 감소하였으며, 유동성은 0.12 sec/g로 향상되었다. 열처리중에 WC와 Co의 상화확산에 의하여 Co$_{6}$W$_{6}$C및 Co$_{3}$W$_{3}$C이 생성되었으며, 두 상이 나타나는 임계온도는 115$0^{\circ}C$이었다.

• Journal of Bio-Environment Control
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• v.5 no.2
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• pp.152-159
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• 1996

Experiment was performed in a newly developed wind tunnel with light system to determine the aerodynamic resistance and eddy diffusivity above the plug stand under artificial light. Maximum air temperature appeared near the top of the plug stand under artificial light. Since Richardson number was ranged from -0.07 to +0.01, the atmosphere above the plug stand in wind tunnel was in an unstable or near- neutral stability state. The average aerodynamic resistance at rear region of plug stand was 25 % higher than that at middle region. Eddy diffusivity($K_{M}$) linearly increased with the increasing air current speed. $K_{M}$ at air current speed of 0.9 m.$s^{-1}$ was about two times as many as that at air current speed of 0.3 m.$s^{-1}$. And average $K_{M}$ at the rear region was 15% lower than that at the middle region. These results indicated that the diffusion of heat and mass along the direction of air current inside the plug stand was different. It might cause the lack of uniformity in the growth and quality of plug seedlings. The wind tunnel developed in this study would be useful to investigate the effects of air current speed on microclimates and the growth of plug seedlings under artificial light in a semi- closed ecosystem.

• KSBB Journal
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• v.6 no.3
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• pp.241-247
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• 1991

The Poly (4-vinyipyridine-co-styrene) membrane containing Pyridine as fixed carrier was synthesized and characterized. And the active transport mechanism of Cl- and $CCl_3COO^-$ with changing concentration of $H^+$ and $OH^-$ was investigated. $CCl_3COO^-$ was transported not only by a symport mechanism with $H^+$ transfer but also by an antiport mechanism with $OH^-$transfer, while $Cl^-$ was transported only by a symport mechanism with $H^+$ transfer. Observing the initial flux of anions, salt formation constant between ions and membrane (K), and diffusion coefficient in membrane (D) were calculated as follows: for $Cl^-, \;K=4.60{\times}10^2\;mol^{-1}{\cdot}\textrm{cm}^3, \;D=1.57{\times}10^{-3}{\textrm{cm}^2/h$ and for $CCl_3COO^-, \;K=1.l0{\times}10^4\;mol^{-1}{\cdot}\textrm{cm}^3, \;D=1.14{\times}10^{-4}{\textrm{cm}^2}/h$.

• Journal of the Korean Magnetics Society
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• v.7 no.3
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• pp.129-133
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• 1997

To investigate the influence of the Hf concentration and the annealing effect in $Co_{1-x}Hf_x$(X=0.16, 0.24 at.%) systems, ferromagnetic resonance experiments have been carried out. Spin wave resonance spectra for all samples consist of several volume modes and one (or two) surface mode. It is suggested that both surfaces of the film have a perpendicular hard axis to the film plane (negative surface anisotropy). The surface anisotropy $K_{s2}$ at substrate-film interface is varied slowly from -0.07 to -0.32 erg/$\textrm{cm}^2$ and the surface anisotropy $K_{s1}$ at film-air interface is varied from 0.18 to -0.47 erg/ $\textrm{cm}^2$ with increasing annealing temperature in the amorphous $Co_{84}Hf_{16}$ thin films. Also, the surface anisotropy $K_{s2}$ is varied slowly from -0.31 to -0.41 erg/$\textrm{cm}^2$ and the surface anisotropy $K_{s1}$is varied from -0.19 to -0.60 erg/$\textrm{cm}^2$ with increasing annealing temperature in the amporphous $Co_{84}Hf_{16}$ thin films. We conjecture that the variation of surface anisotropy $K_{s1}$ is due to the increase of Co concentration resulted from Hf oxidation for low temperature annealing(150~175 $^{\circ}C$) and the diffusion of Co atoms near the film surfaces for high temperature annealing (200~225 $^{\circ}C$).

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.912-917
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• 1998

화학적 산화막(SiOx)이 형성된 Si(100)기판 위에 Co-silicide의 형성과 계면 형상에 관한 연구를 하였다. 화학적 산화막은 과산화수소수(H2O2)의 인위적 처리에 의해 약 2nm을 형성시켰다. 그 위에 5nm 두께의 Co 박막을 전자빔 증착기에 의해 증착시킨 후 열처리하여 Co-silicide를 형성하였다. 화학적 산화막 위에서 Co-silicide 반응기구를 알아 보기 위해 $500^{\circ}C$-$900^{\circ}C$의 온도 범위에서 ex-situ와 in-situ 열처리를 하였다. 이와같이 형성된 Co-silicide 시편의 상형성, 표면 및 계면 형상, 그리고 화학적 조성을 XRD, SEM, TEM, 그리고 AES를 이용하여 분석하였다. 분석 결과 es-situ 열처리시 $700^{\circ}C$까지 CoSi2 상은 형성되지 않았고 Co의 응집화현상이 일어났다. $800^{\circ}C$ 열처리한 경우에는 CoSI2가 형성되었고 facet 현상이 크게 나타났으며 불연속적인 grain 들이 형성되었다. In-situ 열처리한 경우에는 저온에서 ($550 ^{\circ}C$)반응하여 Co-silicide가 형성되기 시작하였으며 $600^{\circ}C$부터는 facet에 의해 박막의 특성이 나빠지기 시작했다. $550^{\circ}C$에서 Co가 화학적 산화막 층을 통해 확산하여 균질한 Co-silicide를 형성하였다. 이와같이 형성된 균질한 실리사이드 층을 이용하여 다단계(55$0^{\circ}C$-$650^{\circ}C$-$800^{\circ}C$)열처리에 의해 균질한 다결정 CoSI2의 형성이 관찰되었다.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.05a
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• pp.180-185
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• 2001

In order to regulate the physical characteristics of an ocean dumping material in the south-eastern East Sea, the diffusion characteristics with the observation, hydraulic experiment and numerical experiment data are investigated. The main results are as follows; (1) Spying CTD observation result of the area of Jung in the East Sea, the ocean dumping area had influenced the Tsushima warm current of high temperature and salinity. Horizontal turbulent diffusivity is 1.913${\times}$10$^{7}$ $\textrm{cm}^2$/sec by drogue tracking. (2) From the experiment of settling, the initial settling velocity of each material is 1.0∼2.7 cm/sec according to the specific gravity and initial concentration. In the pycnocline, particles didn't settle under the pycnocline any more and accumulated. It is signified that calculation of the sedimentation rate of the ocean dumping material including of vertical diffustion must be regard the pycnocline in the ocean area have well-developed pycnocline. (3) Vertical turbulent diffusivity were 2.219${\times}$10$^{-8}$∼8,874${\times}$10$^{-4}$ $\textrm{cm}^2$/sec from the experiment of settling. And, the pycnocline influenced the vertical turbulent diffusivity. (4) From the result of diffusion simulation in the East Sea, the co-concentration line of 0.05 ppm and 0.1 ppm are limited at dumping area after 200 days. The constant concentration line of 0.01 ppm is distributed to the vicinity of Ulleungdo and Tokdo, but isn't distributed to the coastal area of East Sea and southern area of Jung in the East Sea.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.132-138
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• 1991

A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.55-63
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• 2003

A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of $CO_2$ and $N_2O$ gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of $5\times10^{-14}\textrm{cm}^2$ at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.351-354
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• 1998

The formation of the $YBa_2Cu_30_{7_\delta}$(Y123) thick films has been investigated by a surface diffusion Imcess between $3BaCu0_2$+2CuO composite coating powder and a $Y_2BaCuO_5$(Y211). This reaction has been studied in the temperature of $930^{\circ}C$ and $940^{\circ}C$ for 2h to 10h in an oxygen atmosphere. The Y211 substrates becomes covered by co-precipitation of Y123 grains and CuO inclusions. X-ray diflractotnctn. revealed that the lager consisted of an orthorhombic crystal structure. The maximum Jc of $400A/\textrm{cm}^2$ is abtained when the specimen was heat-treated at $930^{\circ}C$ for 6h on the Y211 substrate.