• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.50-57
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• 2016

Transmission equipment is mainly used for the XLPE (cross-linked polyethylene) insulation cable for ultra high voltage power to minimize power loss. The experiment examined the partial discharge characteristics according to the insertion of the bar electrode and needle electrode into the XLPE specimen and the air voids. XLPE insulation cable manufactured by T. company and tungsten electrode material by K. company were used for specimens, by adhering conductive tape on the semi-conductive material of the lower electrode of XLPE specimen with the dimension of $16{\times}40{\times}30$ [mm] was used as negative electrode. In order to investigate the PD with ${\phi}$-q-n of XLPE specimen according to the electrode shape and the size of air voids. we examined the PD by varying the voltage after applying voltage of 3~20 kV on the electrode. Therefore, it was confirmed from the result of PD characteristics of specimen that the larger the air void than the gap between electrode (+) and electrode(-), the larger effect on the discharge when the bar electrode and needle electrode inserted into XLPE, and the closer the distance between the insulation and the needle electrode, the faster insulation breakdown.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1454-1456
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• 2003

전기절연재로서의 성능이 우수하며, 다른 물질과의 결합 및 성형의 편리성 및 경량화에 부합할 수 있는 실리콘 고무의 사용이 급증하고 있다. 이에 본 논문에서는 현수애자에 사용중인 실리콘 고무를 선택하여 제조시에 발생할 수 있는 내부보이드에 대한 전기적특성을 알아보기 위해 실리콘 고무를 3층으로 적층하여 중간층 중심에 비슷한 체적으로 인공보이드를 원통 및 삼각기등형의 보이드를 제작하여 보이드형상 변화에 따른 부분방전전하량을 측정하였다. 위상(${\Phi}$)-전하량(q)-빈도(n)에 대한 데이터를 3차원그래프로 나타냈으며, 또한 평균방전전류 및 방전전력 변화를 통한 보이드 결함 특성을 파악하였다. 그 결과, 전압인가 시간에 따라 원통보이드의 경우 초기에는 방전전류 및 방전전력이 증가 하다가 일정시간이 경과하면 감소하는 형태를 나타냈으며, 삼각기둥보이드의 경우 계속적으로 증가하는 모습을 보여주었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.255-260
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• 2018

In recent years, increasing electricity use has led to considerable interest in green energy. In order to effectively supply, cut off, and operate an electric power system, many electric power facilities such as gas insulation switch (GIS), cable, and large substation facilities with higher densities are being developed to meet demand. However, because of the increased use of aging electric power facilities, safety problems are emerging. Electromagnetic wave and leakage current detection are mainly used as sensing methods to detect live-line partial discharges. Although electromagnetic sensors are excellent at providing an initial diagnosis and very reliable, it is difficult to precisely determine the fault point, while leakage current sensors require a connection to the ground line and are very vulnerable to line noise. The partial discharge characteristic in particular is accompanied by statistical irregularity, and it has been reported that proper statistical processing of data is very important. Therefore, in this paper, we present the results of analyzing ${\Phi}-q-n$ cluster distributions of partial discharge characteristics by using K-means clustering to develop an expert partial discharge diagnosis system generated in a GIS facility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.86-89
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• 2004

To estimate a electrical performance of the extra high voltage XLPE cable the discharge properties due to shift of void position were investigated. The ${\phi}-q-n$ properties have been measured at room temperature by rising voltage ratio of 0.5[kV]. An obtained data was stored to personal computer through A/D converter. The period of applied wave form and discharge values were divided into 64 parts and discharge values generated during 10 seconds were accumulated by phases. As a result, it was confirmed that the charge, phase angle and counts of discharge changed due to void position.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.239-242
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• 2003

자동차 점화장치는 전원으로부터 공급된 낮은 전압을 점화코일을 통하여 연소실의 혼합기를 연소시키기에 충분한 고전압을 발생시키는 장치이며, 점화장치의 핵심은 점화코일이다. 이 점화코일은 절연성능이 우수한 절연재료가 사용되지만 고전압의 발생으로 점화코일 내부에서 일어나는 전기적 열화로 인해 누설전류가 흐르게 되어 전기적 고장을 초래할 수 있다. 이로 인하여 절연재료의 수명은 단축되며, 또한 점화코일에 전류가 흐름으로써 코일 내부에서 발생하는 온도변화에 따른 절연열화로 점화코일의 성능이 저하될 수 있다. 따라서 본 연구에서는 점화코일에 사용되고 있는 절연재료에 전압이 인가될 때 발생할 수 있는 비파괴검사의 일종인 부분방전 측정을 통하여 전압변화에 따른 에폭시 성형 점화코일의 위상각($\Phi$) - 방전전하량(q) - 발생빈도수(n)의 특성 변화를 조사하고 분석함으로써 점화코일의 수명을 예측하여 자동차 점화장치의 성능진단과 정보제공을 자동차 전기장치의 발전에 도움이 될 것을 기대하며, 온도상승에 따른 점화코일의 부분방전 특성을 실험하고 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.27-30
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• 2003

Recently, on power system, it is used to high voltage of transmission and distribution due to safe power supply and have high quality and insulation in order to satisfy excellent insulator. Thus, according to underground of high voltage cable, is occurred break down by ground short. Therefore, it is used to high quality XLPE power cable to interrupt instantaneous voltage drop. If it appear inner defect for cable whose have high quality and insulation, it is reduced rapidly due to concentration of electrical field. After assemble to manufacture, in order to inspect cable condition, it is decided much inspection standard. In this paper, In inner defect of assembling cable at manufacture, for measure the variation of insulation condition by void. it tested the variation of insulating characteristics, using $\phi$-q-n distribution variation in partial discharge experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.256-257
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• 2005

To estimate a electrical performance of the extra high voltage XLPE cable the discharge properties due to shift of void position were investigated. The $\Phi-q-n$ properties have been measured at room temperature by rising voltage ratio of 0.5[kV]. An obtained data was stored to personal computer through A/D converter. The period of applied wave form and discharge values were divided into 64 parts and discharge values generated during 10 seconds were accumulated by phases. As a result, it was confirmed that the charge, phase angle and counts of discharge changed due to void position.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1861-1863
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• 2003

최근 국내 전력시장은 초고압 대전력기기 사용이 현저히 증가하고 있어 이에 따라 부분방전 예방진단 시스템의 필요성은 절대적이며 이러한 시스템의 국산화가 절실히 요구되고 있다. 예방 진단 시스템의 국산화에 있어 부분방전 신호 측정시 신호 대 잡음비(Signal to Noise ratio)를 높이기 위해 측정용 센서의 검출가능 주파수 대역을 높게 설정하여 설계되고 있는데, 따라서 센서에서 검출된 신호를 처리하기 위한 로컬유닛 또한 국산화시 외국 시스템보다 더욱 신뢰성을 가질 수 있도록 설계되어야 한다. 이를 위해서는 기존의 마이크로프로세서를 채용한 저속 시스템을 대체할 수 있도록 더욱 빠르고 높은 신뢰성의 디지털 신호처리 기술이 요구된다. 본 논문에서는 검출 센서의 아날로그 신호를 빠르게 디지털화 한 후 보다 정확한 데이터와 독립적 신호처리 그리고 네트워크를 통한 실시간 전송을 수행할 수 있는 부분방전 예방진단 시스템 로컬유닛의 프로토타입을 Digital Signal Processor (DSP)를 이용하여 구현하였다. 제작된 DSP 로컬유닛을 시험하기 위해 Real-Scale 170kV GIS Mock-up에서 부분방전 신호를 발생 시키고 센서를 통해 검출된 신호를 DSP가 처리하여 사용자의 네트워크를 통한 명령에 따른 실시간 전송모드, ${\Phi}$-q-n 진단모드로 자체 네트워크 기능을 이용하여 사용자에게 데이터를 실시간 전송하도록 하였다. 본 논문에서 구현한 DSP 로컬유닛은 대전력기기 부분방전 예방진단 시스템의 국산화에 있어 기존의 외국 시스템의 로컬유닛보다 구성이 간단하며, 실시간 신호처리 및 원거리 데이터 전송기능에서 우수한 성능을 보였다. 향후 연구에서는 다양한 분석 알고리즘을 탑재한 DSP를 개발하여 더욱 향상된 실시간 데이터 전송 및 분석기능이 우수한 DSP 로컬유닛을 개발하고자 한다.