• 한국초전도ㆍ저온공학회논문지
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• 제6권1호
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• pp.12-17
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• 2004

High critical current density. $J_c$ over $1MA/cm^2$ at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) $SrTiO_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at $700-725^{\circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and $P(H_2O)=4.2%$, most probably due to an insufficient reaction time, and hence $T_c$ was greatly degraded. However the films fired at $750-800^{\circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to $800^{\circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c$ value of $1.1MA/cm^2$ was obtained from the YBCO film fired at $800^{\circ}C$.

• 한국세라믹학회지
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• 제32권4호
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• pp.516-524
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• 1995

In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.

• 한국광학회지
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• 제10권5호
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• pp.386-390
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• 1999

서로 대칭인 두 광기능성 그룹들 (4-cyanoazobenzene groups)을 포함하는 측쇄형 액정 고분자(liquid crystalline polymalonic esters, PCN)에 이광파혼합을 이용하여 소거가 가능한 편광 홀로그램을 기록하였다. 기록된 회절격자의 회절효율을 측정하고, 기록광의 세기에 대한 격자의 기록 특성, 암실 상태에서의 감쇠 및 광에 의한 소거 특성을 조사하였다. 측정결과, 복굴절$\Delta$n은 약6.5$\times$10-2;로 Fe:LiNbO3, Ce:BaTiO3 등의 무기결정에 비해 10~100배 정도 높게 측정되었으며, 감쇠곡선도 1시간 동안 4.3$\times$10-5%의 감쇠를 나타냄으로서 정보저장소자로서의 응용 가능성을 보였다.

• 한국재료학회지
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• 제20권12호
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• pp.654-660
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• 2010

The influences of Na and K content on the crystal phase, the microstructure and the electrical property of $BaTiO_3$-based thermistors was found to show typical PTC effects. The crystal phase of powder calcined at $1000^{\circ}C$ for 4hrs showed a single phase with $BaTiO_3$, and the crystal structure was transformed from tetragonal to cubic phase according to added amounts of Na and K. In XRD results at $43^{\circ}\sim47^{\circ}$, the $(Ba_{0.858}Na_{0.071}K_{0.071})(Ti_{0.9985}Nb_{0.0015})O_{3-\delta}$ showed (002) and (200) peaks but the $(Ba_{0.762}Na_{0.119}K_{0.119})(Ti_{0.9975}Nb_{0.0025})O_{3-\delta}$ showed (002), (020) and (200) peaks. In sintered bodies, those calcined at $600^{\circ}C$ rather than at $1000^{\circ}C$ were dense, and for certain amounts of Na and K showed rapid decreases in grain size. In relative permittivity, the curie temperature due to the transformation of ferroelectric phase rose with added Na and K but decreased in terms of relative permittivity. In the result of the R-T curve, the sintered bodies have curie temperatures of about $140^{\circ}C$ and the resistivity of sintered bodies have scores of $\Omega{\cdot}cm$; the jump order of sintered bodies was shown to be more than $10^4$ in powder calcined at $1000^{\circ}C$.

• 한국재료학회지
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• 제9권5호
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• pp.484-490
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• 1999

Pt/SiOz!Si의 기판위에 $(Pb,La)TiO_3$(PLT) 박막을 졸-겔 방법으로 제작하여 La 첨가량 및 후속열처리 온도에 따른 결정학적, 전기적 특성율 조사하였다. $600^{\circ}C$ 이상의 온도에서 열처리된 PLT 박막 시료의 경우 La 도핑량에 관계없이 전형적인 perovskite 결정구조를 보여 주었다. La이 전혀 첨가되지 않은 $(Pb,La)TiO_3$(PT) 시료에 10 mole% La을 첨가할 경우 (PLT-I0 시료) c축 배향도는 약 63%에서 26%로 크게 감소하였다. PLT-1O 박막시료의 깊이에 따른 AES 분석결과 박막내의 각 성분원소 들이 비교척 균일하게 분포되어 았고 하부전극(Pt)과 PLT 박막층 사이에는 상호반응없이 비교적 안정된 막을 형성하고 있음을 알 수 있었다. $600^{\circ}C$에서 열처리된 PLT-1O 박막의 유전상수$({\varepsilon}r)$ 와 유전정접 (tan$\delta$) 은 약 193과 0.02의 값을 나타내였다. 후속열처리 온도를 $600^{\circ}C 에서 700^{\circ}C$로 증가함에 따라 잔류분극$(2Pr,Pr_+-Pr_-)$은 약 $4\muC\textrm{cm}^2 에서 약 16\muC\textrm{cm}^2$로 크게 증가하였으며 잔류 분극값의 증가는 후속열처리에 의해 결정성이 개선되었기 때문이라 판단된다. $30^{\circ}C$ 온도부근에셔 초전계수($\gamma$)는 약 $4.0nC/\textrm{cm}^2{\cdot}^{\circ}C$의 값을 냐타내었다.

• 한국세라믹학회지
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• 제28권9호
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• pp.689-695
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• 1991

Dielectric properties of Ba1-$\chi$Sr$\chi$Ti1-yCayO3-y ceramics, where Sr and Ca were doped to Ba-site and Ti-site within the range of 0 x 0.24 and 0 y 0.05, respectively, were investigated. The substitution of Ca for Ti, which maintained the high resistivity of these formulations after sintering in a reducing atmosphere, was confirmed. Ca addition decreased the tetragonality c/a, increased the unit cell volume, and lowered Curie temperature, which were attributed to the occupancy of Ca2+ ions on Ti-sites. The lowering of Curie temperature by Ca addition was affected by the substitution of Sr for Ba-site; within 2 mol% of Ca, Curie temperature was lowered at a rate of 2$0^{\circ}C$ and 16$^{\circ}C$ per mol% of Ca at x=0 and x=0.08, respectively. Whereas the resistivity of the formulations without Ca was reduced to 107 {{{{ OMEGA }}cm, when sintered at low oxygen partial pressure of 10-9 MPa, the resistivity value higher than 1011 {{{{ OMEGA }}cm was maintained for the formulations containing Ca more than 0.5 mol%. Dielectric loss factor, tan$\delta$, was about 1% for most formulations.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 The IMAPS-Korea Workshop 2001 Emerging Technology on packaging
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• pp.114-118
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• 2001

졸-겔법으로 Pt/Ti/$SiO_2$/Si 기판위에 $Bi_{3.7}$/$La_{0.75}$$Ti_3O_{12}$(BLT) 강유전체 박막을 형성하였다. As-coated BLT 박막은 $600^{\circ}C$의 후속 열처리온도에서 결정화 되었으며 전형적인 Bi 층상 페롭스카이트 결정구조를 나타내었다. 또한 후속 열처리온도를 증가함에 따라 결정성이 향상되었다. $700^{\circ}C$의 온도에서 후속 열처리된 BLT 박막의 비 유전상수($\varepsilon_{r}$)와 유전손실($\textrm{tan}\delta$)은 5KHz 주파수에서 약 402와 0.04를 각각 나타내었다 $800^{\circ}C$에서 후속 열처리된 BLT박막의 경우 5V의 인가 전압에서 잔류분극 2Pr($Pr^{+}$-$Pr^{-}$)값은 약 32.5$\mu$C/$Cm^2$을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.749-751
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• 2002

$(Pb_{1-x}Sr_x)TiO_3$ $(0.6{\leq}x{\leq}0.8)$ thin films were prepared by the MOD method for tunable microwave device application and their characteristics were investigated as a function of Sr content(x) and applied field. Thin films showed a homogeneous microstructure and the tetragonality(c/a) was slightly decreased with increasing Sr content. With increasing Sr content, Curie temperature of the thin films showed a decreasing tendency. For the PST thin films, the dielectric constant at room temperature, Tc, and $tan{\delta}$ were 750~1900, $-70^{\circ}{\sim}-30^{\circ}C$ and 0.025~0.04, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.175-176
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• 1996

ppt/Ti/SiO2/Si 기판상에 고주파 마그네트론 스퍼터링 방식으로 ppZT 박막[두 께:3000$\AA$]을 증착하고 RTA 방식으로 후속 열처리[열처리온도:550~$650^{\circ}C$]를 실시하여 직 경 0.2mm 소자의 FECApps(ferroelectric cappacitors)를 제작하였다. 증착된 ppZT 박막을 강 유전성 pperovskite 결정상으로 만들기 위해 ppZT 박막의 열처리조건을 연구하였으며, 열처리 방식에 따른 ppZT 박막의 결정특성(상형상, 형상관찰, 성분분석 등)과 커패시터 소자의 전기 적 특성($\varepsilon$r,tan$\delta$,pp-E hysteresis curves, 누설전류 등)을 비교, 분석하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.873-875
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• 1999

We have fabricated good quality superconducting $YBa_{2}Cu_{3}O_{7-\delta}$ thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrate with $CeO_2$ and $BaTiO_3$ buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with YBCO. $CeO_2$ layer may be helpful for power transmission due to its conducting property. In order to enhance the crystallization of YBCO films on metallic substrates. we deposited $CeO_2$ and $BaTiO_3$ buffer layers at various temperatures. The YBCO superconducting tape fabricated with $BaTiO_3$ and $CeO_2$ buffer layers shows 85K of transition temperature and about $8.4{\times}10^4A/cm^2$ of critical current density at 77K.