• Journal of the Korean Society of Safety
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• v.24 no.4
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• pp.28-33
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• 2009

This study examined the mounting status of cigar lighter receptacles for vehicles and analyzed the tracking phenomenon that occurs when foreign material entered a cigar lighter receptacle to obtain data for the analysis of accident investigation. Regardless of the vehicle's output, cigar lighter receptacles are mounted in a vehicle horizontally, vertically, or at tilting or inclined angle. The tilting type cigar lighter receptacle is much easier to use but current leakage resulting from foreign materials (coffee, beverages, water, etc.) falling into the cigar lighter receptacle may cause a fire to start. This study used a vehicle battery (DC 12V) as a power supply for the tracking test and configured its circuit in the same way as that of an electrical device in a vehicle. The tracking phenomenon that occurred in the standby mode of the vehicle exhibited a fine flame and an irregular occurrence of smoke. While this tracking phenomenon was occurring, the leakage current and the reaching distance of the flame were measured to be approximately 930mA and $20{\sim}50cm$, respectively. It is thought that the resultant flame may ignite toluene, dust, cigarettes, etc. It was observed that as the tracking progressed, the internal metal socket melted and a hole was created, the surface of which was also severely carbonized. In addition, the electrical resistance of the carbonized conductive path was measured to be approximately $30{\Omega}$. It is thought that this much resistance may cause local heating when leakage current flows and could ignite any nearby flammable material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.379-380
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• 2005

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• Journal of radiological science and technology
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• v.27 no.2
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• pp.45-50
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• 2004

Synthesis diamond films have been deposited on the molybdenum substrates using an microwave plasma enhanced chemical vapor deposition method. The effects of deposition time, surface morphology, infrared transmittance and Raman scattering have been studied. Diamond deposited on molybdenum substrate for 100 hours by MW plasma CVD from $CH_4-H_2-O_2$ gas mixture had good crystallity with $100[{\mu}m]$ thickness needed for radiation detector. Diamond radiation detector of M-I-M type was made and the current of radiation detector was increased by increasing X-ray dose.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.664-671
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• 2017

A composite material was prepared for the bipolar plates of phosphoric acid fuel cells(PAFC) by hot pressing a flake type natural graphite powder as a filler material and a fluorine resin as a binder. Average particle sizes of the powders were 610.3, 401.6, 99.5, and $37.7{\mu}m$. The density of the composite increased from 2.25 to $2.72g/cm^3$ as the graphite size increased from 37.7 to $610.3{\mu}m$. The anisotropy ratio of the composite increased from 1.8 to 490.9 as the graphite size increased. The flexural strength of the composite decreased from 15.60 to 8.94MPa as the graphite size increased. The porosity and the resistivity of the composite showed the same tendencies, and decreased as the graphite size increased. The lowest resistivity and porosity of the composite were $1.99{\times}10^{-3}{\Omega}cm$ and 2.02 %, respectively, when the graphite size was $401.6{\mu}m$. The flexural strength of the composite was 10.3MPa when the graphite size was $401.6{\mu}m$. The lowest resistance to electron mobility was well correlated with the composite with lowest porosity. It was possible the flaky large graphite particles survive after the hot pressing process.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• Biomolecules & Therapeutics
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• v.17 no.2
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• pp.156-161
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• 2009

The human cytochrome P450 4A11 is the major monooxygenase to oxidize the fatty acids and arachidonic acid. The production of 20-hydroxyeicosatetraenoic acid by P450 4A11 has been implicated in the regulation of vascular tone and blood pressure. Oxidation reaction by P450 4A11 requires its reduction partners, NADPH-P450 reductase (NPR). We report the functional expression in Escherichia coli of bicistronic constructs consisting of P450 4A11 encoded by the first cistron and the electron donor protein, NPR by the second. Typical P450 expression levels of wild type and several N-terminal modified mutants was observed in culture media and prepared membrane fractions. The expression of functional NPR in the constructed P450 4A11: NPR bicistronic system was clearly verified by reduction of nitroblue tetrazolium. Membrane preparation containing P450 4A11 and NPR efficiently oxidized lauric acid mainly to $\omega$-hydroxylauric acid. Bicistronic coexpression of P450 4A11 and NPR in E. coli cells can be extended toward identification of novel drug metabolites or therapeutic agents involved in P450 4A11 dependent signal pathways.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.78.2-78.2
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• 2019

We develop an Alcock-Paczynski (AP) test method that uses the evolution of redshift-space two-point correlation function (2pCF) of galaxies. The method improves the AP test proposed by Li et al. (2015) in that it uses the full two-dimensional shape of the correlation function. Similarly to the original method, the new one uses the 2pCF in redshift space with its amplitude normalized. Cosmological constraints can be obtained by examining the redshift dependence of the normalized 2pCF. This is because the 2pCF should not change apart from the expected small non-linear evolution if galaxy clustering is not distorted by incorrect choice of cosmology used to convert redshift to comoving distance. Our new method decomposes the redshift difference of the 2-dimensional correlation function into the Legendre polynomials whose amplitudes are modelled by radial fitting functions. The shape of the normalized 2pCF suffers from small intrinsic time evolution due to non-linear gravitational evolution and change of type of galaxies between different redshifts. It can be accurately measured by using state of the art cosmological simulations. We use a set of our Multiverse simulations to find that the systematic effects on the shape of the normalized 2pCF are quite insensitive to change of cosmology over \Omega_m=0.21 - 0.31 and w=-0.5 - -1.5. Thanks to this finding, we can now apply our method for the AP test using the non-linear systematics measured from a single simulation of the fiducial cosmological model.