• 제목/요약/키워드: $\Omega$ Type

검색결과 731건 처리시간 0.031초

단결정 실리콘 태양전지 도핑 확산 공정에서 주입되는 $O_2$ 가스와 PSG 유무에 따른 특성 변화 (The Study on the Characteristic of Mono Crystalline Silicon Solar Cell with Change of $O_2$ Injection during Drive-in Process and PSG Removal)

  • 최성진;송희은;유권종;이희덕
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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    • pp.105-110
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    • 2011
  • The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.

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결정질 실리콘 태양전지를 위한 실리콘 질화막의 특성 (Properties of Silicon Nitride Deposited by RF-PECVD for C-Si solar cell)

  • 박제준;김진국;송희은;강민구;강기환;이희덕
    • 한국태양에너지학회 논문집
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    • 제33권2호
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    • pp.11-17
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    • 2013
  • Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

Aluminum 및 Aluminum-Boron후면 전극에 따른 단결정 실리콘 태양전지 특성 (Characteristics of Mono Crystalline Silicon Solar Cell for Rear Electrode with Aluminum and Aluminum-Boron)

  • 홍지화;백태현;김진국;최성진;김남수;강기환;유권종;송희은
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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    • pp.34-39
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    • 2011
  • Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

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A Study of the SPWM High-Frequency Harmonic Circulating Currents in Modular Inverters

  • Xu, Sheng;Ji, Zhendong
    • Journal of Power Electronics
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    • 제16권6호
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    • pp.2119-2128
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    • 2016
  • Due to detection and control errors, some high-frequency harmonics with voltage-source characteristics cause circulating currents in modular inverters. Moreover, the circulating currents are usually affected by the output filters (OF) of each module due to their filter and resonance properties. The interaction among the circulating currents in the modules increase the power loss and reduce system stability and control precision. Therefore, this paper reports the results of a study on the SPWM high-frequency harmonics circulating currents for a double-module VSI. In the paper, an analysis of the circulating-current circuits is briefly described. Next, a mathematic model of the single-module output voltage based on the carrier frequency of SPWM is built. On this basis, through mathematic modeling of high-frequency harmonic circulating currents, the formation mechanism and distribution characteristics of circular currents and their influences are studied in detail. Finally, the influences of the OF on the circulating currents are studied by mainly taking an LC-type filter as an example. A theoretical analysis and experimental results demonstrate some important characteristics. First, the carrier phase shifting of the SPWM for each module is the major cause of the SPWM harmonic circulating currents, and the circulating currents are in an odd distribution around n-times the carrier frequency $n{\omega}_s$, where n = 1, 2, 3, ${\ldots}$. Second, the harmonic circular currents do not flow into the parallel system. Third, the OF can effectively suppress the non-circulating part of the high-frequency harmonic currents but is ineffective for the circulation part, and actually reduces system stability.

Ramlibacter ginsenosidimutans sp. nov., with Ginsenoside-Converting Activity

  • Wang, Liang;An, Dong-Shan;Kim, Song-Gun;Jin, Feng-Xie;Kim, Sun-Chang;Lee, Sung-Taik;Im, Wan-Taek
    • Journal of Microbiology and Biotechnology
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    • 제22권3호
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    • pp.311-315
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    • 2012
  • A novel ${\beta}$-proteobacterium, designated BXN5-$27^T$, was isolated from soil of a ginseng field of Baekdu Mountain in China, and was characterized using a polyphasic approach. The strain was Gram-staining-negative, aerobic, motile, non-spore-forming, and rod shaped. Strain BXN5-$27^T$ exhibited ${\beta}$-glucosidase activity that was responsible for its ability to transform ginsenoside $Rb_1$ (one of the dominant active components of ginseng) to compound Rd. Phylogenetic analysis based on 16S rRNA gene sequences showed that this strain belonged to the family Comamonadaceae; it was most closely related to Ramlibacter henchirensis $TMB834^T$ and Ramlibacter tataouinensis$TTB310^T$ (96.4% and 96.3% similarity, respectively). The G+C content of the genomic DNA was 68.1%. The major menaquinone was Q-8. The major fatty acids were $C_{16:0}$, summed feature 4 (comprising $C_{16:1}$ ${\omega}7c$ and/or iso-$C_{15:0}$ 2OH), and $C_{17:0}$ cyclo. Genomic and chemotaxonomic data supported the affiliation of strain BXN5-$27^T$ to the genus Ramlibacter. However, physiological and biochemical tests differentiated it phenotypically from the other established species of Ramlibacter. Therefore, the isolate represents a novel species, for which the name Ramlibacter ginsenosidimutans sp. nov. is proposed, with the type strain being BXN5-$27^T$ (=DSM $23480^T$ = LMG $24525^T$ = KCTC $22276^T$).

고밀도 배양에 있어 먹이종류와 공급량 및 vitamin B12 첨가에 따른 담수산 rotifer (Brachionus calyciflorus)의 성장 (Effects of Food and Vitamin B12 on the Growth of a Freshwater Rotifer (Brachionus calyciflorus) in the High Density Culture)

  • 이균우;박흠기
    • 한국수산과학회지
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    • 제36권6호
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    • pp.606-613
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    • 2003
  • This study investigated the effects of food type (condensed freshwater Chlorella, dried Chlorella, dried Spirulina, dried Schizochytrium, baker's yeast and $\omega-yeast$) and amount, and supplementation of vitamin $B_{12}$ on the growth of freshwater rotifer (Brachionus calyciflorus) in high density culture. Growth of rotifers fed condensed freshwater Chlorella was the highest and its density ranged $7.65-8.14{\times}10^3\;inds./mL.$ The primary lipid acids of rotifers fed condensed freshwater Chloyella were linoleic and linolenic, and their amount ($\%$ of total fatty acids) were $48.8\%\;and\;26.8\%,$ respectively. This suggests that condensed freshwater Chlorella would be an effective diet for high quality and quantity rotifers, which in turn serve as live food for freshwater fish larvae. Growth rate of rotifers with Chlorella supplementation increased as amount of supplementation increased up to 1.5 and 2.5 mg at 28 and $32^{\circ}C$, respectively. However, undissolved ammonia toxicity and packing volume of Chlorella in culture medium, reached the optimal conditions for the stable and effective cultivation of rotifers when amount of condensed freshwater Chlorella was 1.5 mg in dry weight per 1,000 rotifers at $28^{\circ}C\;and\;32^{\circ}C$ Growth of rotifers in condensed freshwater Chlorella with vitamin $B_{12}$ supplementation was significantly higher than that of rotifers without supplementation. However, no significant difference was found among the different concentrations of vitamin $B_{12}.$ Therefore, vitamin $B_{12}$ could improve the growth of rotifers (B. calyciflorus).

$CCI_4$ 를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성 (Fabrication and Characteristic of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride $CCI_4$)

  • 손정환;김동욱;홍성철;권영세
    • 전자공학회논문지A
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    • 제30A권12호
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    • pp.51-59
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    • 1993
  • A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

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Dynamic Magnetostriction Characteristics of an Fe-Based Nanocrystalline FeCuNbSiB Alloy

  • Chen, Lei;Li, Ping;Wen, Yumei
    • Journal of Magnetics
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    • 제16권3호
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    • pp.211-215
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    • 2011
  • The dynamic magnetostriction characteristics of an Fe-based nanocrystalline FeCuNbSiB alloy are investigated as a function of the dc bias magnetic field. The experimental results show that the piezomagnetic coefficient of FeCuNbSiB is about 2.1 times higher than that of Terfenol-D at the low dc magnetic bias $H_{dc}$ = 46 Oe. Moreover, FeCuNbSiB has a large resonant dynamic strain coefficient at quite low Hdc due to a high mechanical quality factor, which is 3-5 times greater than that of Terfenol-D at the same low $H_{dc}$. Based on such magnetostriction characteristics, we fabricate a new type of transducer with FeCuNbSiB/PZT-8/FeCuNbSiB. Its maximum resonant magnetoelectric voltage coefficient achieves ~10 V/Oe. The ME output power reaches 331.8 ${\mu}W$ at an optimum load resistance of 7 $k{\Omega}$ under 0.4 Oe ac magnetic field, which is 50 times higher than that of the previous ultrasonic-horn-substrate composite transducer and it decreases the size by nearly 86%. The performance indicate that the FeCuNbSiB/PZT-8/FeCuNbSiB transducer is promising for application in highly efficient magnetoelectric energy conversion.

Physiological and Phylogenetic Analysis of Burkholderia sp. HY1 Capable of Aniline Degradation

  • Kahng, Hyung-Yeel;Jerome J. Kukor;Oh, Kye-Heon
    • Journal of Microbiology and Biotechnology
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    • 제10권5호
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    • pp.643-650
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    • 2000
  • A new aniline-utilizing microorganism, strain HY1 obtained from an orchard soil, was characterized by using the BIOLOG system, an analysis of the total cellular fatty acids, and a 16S rDNA sequence. Strain HY1 was identified as a Burkholderia species, and was designated Burkholderia sp. HY1. GC and HPLC analyses revealed that Burkholderia sp. HY1 was able to degrade aniline to produce catechol, which was subsequently converted to cis,cis-muconic acid through an ortho-ring fission pathway under aerobic conditions. Strain HY1 exhibited a drastic reduction in the rate of aniline degradation when glucose was added to the aniline media. However, the addition of peptone or nitrate to the aniline media dramatically accelerated the rate of aniline degradation. A fatty acid analysis showed that strain HY1 was able to produce lipids 16:0 2OH, and 11 methyl 18:1 ${\omega}7c$ approximately 3.7-, 2.2-, and 6-fold more, respectively, when grown on aniline media than when grown on TSA. An analysison the alignment of a 1,435 bp fragment. A phylogenetic analysis of the 16S rDNA sequence based on a 1,420 bp multi-alignment sowed of the 16s rDNA sequence revealed that strain HY1 was very closely related to Burkholderia graminis with 95% similarity based that strain HY1 was placed among three major clonal types of $\beta$-Proteobacteria, including Burkholderia graminis, Burkholderia phenazinium, and Burkholderia glathei. The sequence GAT(C or G)${\b{G}}$, which is highly conserved in several locations in the 16S rDNA gene among the major clonal type strains of $\beta$-Proteobacteria, was frequently replaced with GAT(C or G)${\b{A}}$ in the 16S rDNA sequence from strain HY1.

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GZO/Metal/GZO 하이브리드 구조 투명 전도막의 전기적, 광학적 특성; Ag, Cu, Al, Zn 금속 삽입층의 효과 (Electrical and Optical Properties of Transparent Conducting Films having GZO/Metal/GZO Hybrid-structure; Effects of Metal Layer(Ag, Cu, Al, Zn))

  • 김현범;김동호;이건환;김광호
    • 한국표면공학회지
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    • 제43권3호
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    • pp.148-153
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    • 2010
  • Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.