• 한국전기전자재료학회논문지
• /
• 제19권9호
• /
• pp.800-807
• /
• 2006

To enhance the conversion speed more fast, we separate the determination process of MSB and LSB with the two independent ADC circuits of the Incremental Sigma Delta ADC. After the 1st Incremental Sigma Delta ADC conversion finished, the 2nd Incremental Sigma Delta ADC conversion start while the 1st Incremental Sigma Delta ADC work on the next input. By determining the MSB and the LSB independently, the ADC conversion speed is improved by two times better than the conventional Extended Counting Incremental Sigma Delta ADC. In processing the 2nd Incremental Sigma Delta ADC, the inverting sample/hold circuit inverts the input the 2nd Incremental Sigma Delta ADC, which is the output of switched capacitor integrator within the 1st Incremental Sigma Delta ADC block. The increased active area is relatively small by the added analog circuit, because the digital circuit area is more large than analog. In this paper, a 14 bit Extended Counting Incremental Sigma-Delta ADC is implemented in $0.25{\mu}m$ CMOS process with a single 2.5 V supply voltage. The conversion speed is about 150 Ksamples/sec at a clock rate of 25 MHz. The 1 MSB is 0.02 V. The active area is $0.50\;x\;0.35mm^{2}$. The averaged power consumption is 1.7 mW.

• 한국세라믹학회지
• /
• 제38권4호
• /
• pp.325-330
• /
• 2001

고상반응법으로 이론 밀도의 약 97%의 소결 밀도를 갖는 N $d_{1-x}$S $r_{x}$G $a_{1-x}$M $g_{x}$ $O_{3{\delta}}$(x=0, 0.03, 0.07, 0.1) 고체전해질을 제조하였다. X선 회절 분석 결과, x=0.03일 때의 X선 회절도는 순수한 NdGa $O_3$와 같았으나, x=0.07, 0.1일 때에는 불순물이 나타났다. 교류 복소임피던스는 4$50^{\circ}C$~90$0^{\circ}C$의 온도 범위에서 공기 중에서 측정하였으며, 각 조성에 대하여 상호 비교 분석하기 위하여 복소비저항 스펙트럼으로 변환하여 해석하였다. 전기전도도는 N $d_{0.93}$S $r_{0.07}$G $a_{0.93}$M $g_{0.07}$ $O_{0.97}$(x=0.07) 시편이 90$0^{\circ}C$에서 6$\times$$10^{-3}$ S$cm^{-1}$ /로 가장 우수하였으며, 활성화 에너지는 저온 영역에서는 1 eV, 고온 영역에서는 0.74 eV이었다.다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제12권1호
• /
• pp.10-17
• /
• 2012

This paper presents a clock regenerator using two $2^{nd}$ order ${\sum}-{\Delta}$ (sigma-delta) modulators for wide range of dividing ratio as defined in HDMI standard. The proposed circuit adopts a fractional-N frequency synthesis architecture for PLL-based clock regeneration. By converting the integer and decimal part of the N and CTS values in HDMI format and processing separately at two different ${\sum}-{\Delta}$ modulators, the proposed circuit covers a very wide range of the dividing ratio as HDMI standard. The circuit is fabricated using 0.18 ${\mu}m$ CMOS and shows 13 mW power consumption with an on-chip loop filter implementation.

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
• /
• pp.117.1-117.1
• /
• 2000

• 대한전자공학회논문지SD
• /
• 제45권2호
• /
• pp.135-139
• /
• 2008

본 논문에서는 선별된 IF 대역의 데이터 변환을 위하여 모듈레이터의 하나의 계수값에 의하여 IF 대역 중심주파수을 조절할 수 있는 새로운 2차 SC Bandpass $\Sigma-\Delta$ 모듈레이터 구조를 제안한다. 제안한 구조는 기존구조에 비하여 2차 형태의 잡음 전달함수를 임의로 변경할 수 있고, 중심주파수 조절를 위하여 기존구조는 가변이 가능한 2개의 계수값, 기본클럭외 다른 8개의 클럭이 필요한 반면 제안한 구조는 가변이 가능한 하나의 계수값과 기본 클럭만으로 주파수를 조절할 수 있다.

• Journal of Magnetics
• /
• 제18권2호
• /
• pp.150-154
• /
• 2013

$La_{1-z}Nd_z(Fe_{0.88}Si_{0.12})_{13}$ and their hydrides were investigated to obtain large magnetocaloric effects (MCEs) in a wide temperature range, including room temperature, for applications in magnetic refrigents. Since the magnetization change due to the itinerant-electron metamagentic (IEM) transition for $La_{1-z}Nd_z(Fe_{0.88}Si_{0.12})_{13}$ becomes larger with increasing z, the isothermal magnetic entropy change ${\Delta}S_m$ and the relative cooling power (RCP) are enhanced. In addition, the Curie temperatrue $T_C$ of $La_{0.8}Nd_{0.2}(Fe_{0.88}Si_{0.12})_{13}$ is increased from 193 to 319 K by hydrogen absorption, with the IEM transition. The maximum value of $-{\Delta}S_m$, $-{\Delta}S{_m}^{max}$, in a magnetic field change of 2 T for $La_{0.8}Nd_{0.2}(Fe_{0.88}Si_{0.12})_{13}H_{1.1}$ is about 23 J/kg K at $T_C$ = 288 K, which is larger than that of 19 J/kg K at $T_C$ = 276 K for $La(Fe_{0.88}Si_{0.12})_{13}H_{1.0}$. The value of RCP = 179 J/kg of the former is also larger than 160 J/kg of the latter. It is concluded that the partial substitution of Nd improves MCEs in a wide temperautre range, including room temperature.

• 전력전자학회논문지
• /
• 제14권1호
• /
• pp.54-61
• /
• 2009

본 논문에서는 강압형 DC-DC 컨버터의 성능 개선을 위한 스위칭 기법인 2차 SDSDM (Space Dithered Sigma Delta Modulation)방식을 제안한다. PWM (Pulse Width Modulation) 방식은 일정 스위칭 주파수 대역에서의 고조파로 인해 소음, 전자파 장애, 스위칭 손실 등을 유발한다. 이러한 문제를 해결하기 위한 DSDM 방식의 일종인 1차 SDSDM은 랜덤 디더(Random Dither) 발생기가 1차 SDM의 양자화기(quatizer) 입력단에 위치하여 스위칭 주파수가 분산된다. 강압형 DC/DC 컨버터에 제안하는 2차 SDSDM의 방식을 적용한 실험 결과를 통해 타당성을 검증한다.

• 한국초전도ㆍ저온공학회논문지
• /
• 제11권2호
• /
• pp.1-6
• /
• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
• /
• pp.121-123
• /
• 2002

Fast response characteristics of twisted nematic liquid crystal display (TN-LCD) cell with different nematic liquid crystals (NLCs) and cell gap on a rubbed polyimide (PI) surface were studied. High transmittance and fast response time of the TN-LCD on the rubbed PI surface were achieved by using high birefringence ($\Delta$ n) and low cell gap. It is considered that the transmittance and response time of the TN-LCD on the rubbed PI surface decreased as $\Delta$ nd decrease.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.514-517
• /
• 2002

We investigated response characteristics of twisted nematic (TN) cell with different nematic liquid crystals (NLCs) and cell gap d on a rubbed polyimide (PI) surface. High transmittance and fast response time of the TN cell on the rubbed PI surface were achieved by using high birefringence (${\Delta}n$) and low cell gap d. The response time of TN cell on the rubbed PI surface was measured 5.1 ms. The transmittance and response time of the TN cell on the rubbed PI surface decreased with decreasing ${\Delta}nd$.