• ETRI Journal
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• v.31 no.6
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• pp.675-679
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• 2009

$Ti_xSi_{1-x}O_y$ (TSO) thin films are fabricated using plasma-enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of $TiO_2$ and $SiO_2$. The refractive indices of $SiO_2$ and $TiO_2$ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.155-159
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• 2003

Polycrystalline $Ti_{1-x}Co_xO_2$ thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{1-x}Co_xO_2$ thin films with $x{\leq}0.05$ showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the $Ti_{1-x}Co_xO_2$ (TCO) phases. On the other hand, in case of thin films above x=0.05, Co clusters formed in a homogeneous $Ti_{1-x}Co_xO_2$ Phase, and the overall ferromagnetic (FM) properties depended on both $FM_{TCO}$ and $FM_{Co}$. Co clusters with about 10nm-150nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.130-130
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• 1997

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.186.1-189
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• 2001

Ferroelectric $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (BLT)thin films with various compositions(x=0.65, 0.70, 0.75) were prepared on Pt//Ti/SiO$_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BLT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atomosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70) thin film capacitors with a Pt top electrode showed better ferroelectric properties than other films. At the applied voltage of 5V, the dielectric constant($\varepsilon$$_{r}$), dissipation factor(tan$\delta$),remanent polarization(2Pr), and coercive field(2Ec) of the $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70)thin films were about 272.54, 0.059, 32.4 $\mu$C/cm$^2$, 2Ec=119.9kV/cm. Also the capacitor did not show any significant fatigue up to 4.8$\times$10$^{10}$ read/write switching cycles.hing cycles.s.

• Journal of Electrical Engineering and Technology
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• v.2 no.1
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• pp.98-101
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• 2007

Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.410-415
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• 1999

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.75-79
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• 1997

Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.