• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.80-84
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• 2015

We investigated the dielectric relaxation properties $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics with CuO addition. With increasing CuO addition, the lattice parameter was increased by substitution of small amount $Cu^{2+}$ ion in B-site of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics. Also the grain size and the maximum dielectric constant of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics was decreased with increasing amounts of CuO addition. Moreover, the diffused phase transition properties (${\gamma}$) of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics was increased by compositional fluctuation with increasing of CuO amount, changed from 1.45 at 1 wt% CuO addition to 1.94 at 7 wt% CuO addition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.180-181
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• 2009

$(Ba_{0.6},Sr_{0.3}Ca_{0.1})TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, $(Ba_{0.6},Sr_{0.3}Ca_{0.1})TiO_3$ array thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ (0.1~0.7 mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The thickness of all (Ba,Sr,Ca)$TiO_3$ thick films was approximately 60mm. The Curie temperature of doped with 0.1 mol% $Yb_2O_3$ specimen was $45^{\circ}C$, and the dielectric constant and at this temperature was 1062.

• 한국세라믹학회지
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• 제40권1호
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• pp.37-45
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• 2003

$BaTiO_3$의 Ba 자리에 Ca, Ti 자리에 Zr을 첨가한 $(B a_{1-x}Ca_x)(Ti_{0.96-y}Zr_{y}Sn_{0.04})O_3$ $(0.15 {\leq} x{\leq}0.20,\; 0.09{\leq}y{\leq}$0.14) 조성에 2차상 형성을 유도하여 복합체를 만든 후 유전 및 소결 특성을 조사하였다. Ca량이 15mol% 이상 첨가됨에 따라 $CaTiO_3$를 주성분으로 하는 2차상이 석출하여 복합체가 형성되었으며, Ca량의 증가에 따라 2차상 분율이 증가하였다. Ca량의 증가는 큐리 온도를 mol%당 $1.7^{\circ}C$ 감소시키며, 저유전율 2차상의 영향으로 Ca량 증가에 따라 최대 유전율은 mol%당 200 감소하였다. Zr 첨가는 큐리온도를 mol%당 $10^{\circ}C$ 감소시키며, 확산형 상전이 현상을 증가시켜 최대 유전율을 217 감소시켰다. 2차상의 증가에 의하여 비정상 입성장이 억제되어 소결밀도, 내전압 특성이 향상되었으며, Zr 첨가에 의하여 커패시턴스의 온도 안정성을 제어하여 EIA 규격을 만족하는 고압, 고유전율 Y5U 콘덴서 조성을 개발하였다.

• 한국세라믹학회지
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• 제38권3호
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• pp.280-286
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• 2001

10 이하의 저유전율을 갖는 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스의 미세구조와 고주파 유전특성을 조사하였다. (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 정방정(tetragonal) 구조를 가진다. 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$세라믹스는 BaWO$_4$와 $Mg_2$SiO$_4$의 상들이 공존하는 혼합상을 보였으며, $Mg_2$SiO$_4$가 이차사으로 형성된 것이 관찰되었다. 120$0^{\circ}C$~140$0^{\circ}C$에서 2시간 동안 소결된 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 $\varepsilon$$_{r}$=6.37~8.21, Q.f=15000~99422 그리고 $ au$$_{f}$=73.9~48.9 ppm/$^{\circ}C$의 고주파 유전특성을 가졌다. $\tau$$_{f}$를 보정하기 위해, CaTiO$_3$(1,5 wt%)가 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x$\geq$0.9) 세라믹스에 첨가되었다. 135$0^{\circ}C$에서 2시간 동안 소결된 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$+CaTiO$_3$(5 wt%) 세라믹스는 $\varepsilon$$_{r}$=7.3, Q.f=30532 그리고 $\tau$$_{f}$=-30 ppm/$^{\circ}C$의 고주파 유전특성을 얻었다. 얻었다.

• 한국세라믹학회지
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• 제23권1호
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• pp.7-12
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• 1986

Dielectric properties of $Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$ were investigated from x=0 to 0.20, and temperature range -4$0^{\circ}C$~13$0^{\circ}C$ Density and grain size decreased with increasing Sn content due to grain growth inhibitor. Dielectric constant below the Curie temperature increased with increasing Sn content and dissipation factor dec reased. These results are due to grain size effect and internal stress. Curie temperature was shifted to lower temperature with increasing ratio of total polarizability to volume resulting from substitution of $Ba^{2+}$ ion with $Ca^{2+}$ ion $Ti^{4+}$ ion with $Sn^{4+}$ ion.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.680-684
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• 2007

In this study, we investigated the effects of structural and electrical properties of $(Ba_{0.6},\;Sr_{0.3},\;Ca_{0.1})TiO_3$ thick films with variation $Dy_2O_3$ contents. $(Ba_{0.6},\;Sr_{0.3},\;Ca_{0.1})TiO_3$ powders, prepared by the sol-gel method, were mixed organic vehicle. The BSCT thick films doped with 0.1, 0.3, 0.5, 0.7 mol% $Dy_2O_3$ were fabricated by the screen-printing techniques on the alumina substrates and the structural and dielectric properties were investigated with variation of $Dy_2O_3$ doping contents. All BSCT thick films were sintered at $1420^{\circ}C$, for 2hr. In the TG-DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $670 ^{\circ}C$. In the XRD analysis, all BSCT thick films showed the cubic perovskite structure. The average thickness of BSCT thick films was approximately $65{\mu}m$. The Curie temperature decreased with increasing $Dy_2O_3$ amount. The relative dielectric constant and dielectric loss of BSCT thick films doped with $Dy_2O_3$ 0.1 mol% were 6267 and 2.6 %, respectively.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.645-651
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• 2008

To reduce noise in high frequency and distortion of signal, the composition of $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$ and $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ was developed. The composition was not solid solution, but mixtures of various phases composed of Ca, Sr, Zr, Ti and Ba oxides. The dielectric constant increased, the quality factor and the insulation resistance decreased with $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ content. The composition of $0.4(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ satisfied the electric characteristics and the temperature coefficient of dielectric constant (TCC). In addition, the glass frit and $MnO_2$ also affected the electric characteristics. From the result of the best fit simulation, $MnO_2$ 0.3 mol%, the glass frit 0.6 wt% showed the insulation resistance $906{\Omega}{\cdot}F$, the quality factor 821, and the dielectric constant 92. With the selected composition, MLCC capacitors sized $4.5{\times}3.2{\times}2.5mm$ were manufactured with 105 layered of the dielectric thickness $16{\mu}m$ using Ni inner electrode, They represented the capacitance $98{\sim}102$ nF, the quality factor 1,200 and the insulation resistance $1,500{\Omega}{\cdot}F$. Also, they had high break-down voltage with $107{\sim}115V/{\mu}m$, and satisfied the SL TCC characteristics.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.404-407
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• 2016

In this study, to develop low temperature sintering capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of $B_2O_3$ addition on the dielectric properties and microstructure was investigated. The XRD patterns demonstrated that all the specimens showed Perovskite phase, and secondary phases are indicated in the measurement range of XRD. And also, temperature coefficient of capacitance(TCC) of all the specimen sintered at $1,180^{\circ}C$ showed +3~-56% except for x=0.006. For all the specimens, observed one peak was tetragonal cubic difuse phase transition temperature(Tc), which is located in the vicinity of room temperature.

• 한국결정성장학회지
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• 제7권2호
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• pp.253-258
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• 1997

반도체화 첨가제인 $Y_2O_3$와 $Nb_2O_5$ 첨가랑 변화에 따른 PTCR $BaTiO_3$ 세라믹스의 결정구조 해석과 상전이 특성을 연구하기 위하여 ($Ba_{0.85}Ca_{0.15})TiO_3$ ＋ X m/o $Nb_2O_5$(Y m/o $Y_2O_3$) ＋ 0.08 w/o $Mn(NO_3)_2$ㆍ$6H_2O$ ＋ 0.25 w/o $SiO_2$ 계에서 X는 0.1 ~ 0.4로 Y는 0.2 ~ 0.4로 각각 변화시켜 실험을 수행하였다. $Nb_2O_5$의 첨가시 B-site 치환에 따라서 격자상수가 선형적으로 변화하다가 0.3 mol% 이상 치환할 경우 c 축의 격자상수가 급격히 감소함을 알 수 있었다. 이는 octahedron distortion둥의 원인으로 판단되며, 이러한 격자상수 변화는 상전이 온도 결과와도 잘 일치함을 확인할 수 있었다. 또한 $Y_2O_3$ 첨가의 경우 0.3 mol%가지는 A, B-site를 각각 치환하며 그 이상부터는 A-site 이온을 주로 치환하는 것을 격자상수 변화와 상전이 온도결과를 통해 알 수 있었으며, Rietveld 해석결과 $Y^{3+}$가 A-site 치환시 $Ba^{2＋}$와 $Ca^{2＋}$를 같은 비율로 치환한다는 것을 알 수 있었다.

• 대한전기학회논문지
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• 제43권7호
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• pp.1144-1151
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• 1994

The humidity-sensitive specimens-(BaS11T-S1xTCaS1xT)TiOS13T, x=0, 0.1, 0.2, 0.3, 0.4, 0.5-were fabricated by a solid-state reaction method which is easy in process control of microstructure and good in mass production, and their humidity-sensitive characteristics were examined. Ca inhibits grain growth and the open porosity increases with Ca substitution, and the specimens at x=0.5 show the best humidity sensitivity. Their humidity sensitivity is higher at the lower frequencies, and drift phenomenon in humidity sensitivity is exhibted with aging in the air, which disappears by a heat treatment. The electrical conduction with water adsorption is dominated by the ions, and the activation energy decreases with increasing relative humidity.