• 대한화학회지
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• 제7권4호
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• pp.254-256
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• 1963

$KF-BaTiO_3$系와 $TiO_2-BaTiO_3$系에서 각각 成長시킨 $BaTiO_3$의 單結晶中의 중요 不純物을 分光化學分析法으로 定量하여 比較 檢討하였다. 이 分析法은 $SrTiO_3$의 單結晶의 分光化學分析에도 適用된다.

• 한국세라믹학회지
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• 제32권4호
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• pp.516-524
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• 1995

In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.286-286
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• 2007

Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO 후막 interdigital 커패시터를 연구하였다. Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO의 후막을 $Al_2O_3$ 기판 위에 형성하기 위하여 스크린 프린팅 방법을 이용하였다. $BaSrTiO_3$의 세라믹 물질은 높은 유전율(1MHz에서 500이상)과 낮은 유전 손실(1MHz에서 0.01)값을 가지고 있는 반면, $1350^{\circ}C$의 높은 온도에서 소결되는 단점이 있다. 따라서 본 연구에서는 $BaSrTiO_3$ 세라믹 물질의 유전특성을 향상시키고 $1350^{\circ}C$의 높은 소결온도를 낮추기 위해서, MgO(30wt%)와 Li(3wt%)을 $BaSrTiO_3$에 첨가하였다. 그리고 10um의 후막을 $Al_2O_3$ 기판 위에 스크린 프린팅 방법을 통해 형성한 후, 50um finger gap의 interdigital 커패시터를 Ag 전극을 이용하여 제작하였다. 샘플을 제작하기 전에, Frequency와 유전율의 상관관계를 알아보기 위해 3D simulator를 통해 시뮬레이션 하였고, 주파수와 온도별 유전 특성, 구조와 전암-전류에 대한 특성을 본 연구의 결과를 통해 토의 할 것이다.

• 한국세라믹학회지
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• 제22권2호
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• pp.63-67
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• 1985

$BaTiO_3$ and $SrTiO_2$ were mixed with the mole ratio of 36:65:50, 50: 50 and 65:35 and then heated at 110$0^{\circ}C$~130$0^{\circ}C$ for 1~64 hrs. The solid state reactions and dielectric properties were investigated as a function of amount of solid solution. Activation energy of solid solution decreased with increasing amount of $BaTiO_3$ due to fast diffusion of $Ba^{2+}$ ions. Dielectric constants increased with increasing the soaking time at 125$0^{\circ}C$and 130$0^{\circ}C$ and Curie Temperature shifted to higher temperature with increasing the soaking time at 125$0^{\circ}C$ and 130$0^{\circ}C$. It attributes to the am-ount of solid solution and grain growth, Dielectric constants decreased and Curie Temperature shifted to lower temperature due to decreasing polari-zability.

• 한국재료학회지
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• 제2권4호
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• pp.248-256
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• 1992

본 논문에서는 ATi$O_3$(A=Ca, Sr, Ba) 조성을 갖는 단순 페롭스카이트 구조에서 생성되는 격자결함 구조에 대하여 고찰하였다. 페롭스카이트 구조는 고충전밀도를 갖기 때문에 프렌클 결함은 고려되지 않았다. 쇼트키결함이나, 고유전자결함도 자연적으로 포함된 억셉타 불순물 농도에 비하면 무시할 정도로 적은 양이다. 실제적으로 전기적 특성에 영향을 주는 것은 전하적 결함을 발생하는 aliovalent 불순물이다. 삼성분계이기 때문에 양이온간의 비화학양론이 발생하며 BaTi$O_3$나 SrTi$O_3$에서 수백 ppm이내의 AO나 Ti$O_2$의 용해도가 관찰되나, CaTi$O_3$에서는 상당량의 CaO와 $TiO_2의$ 용해가 가능하다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.180-181
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• 2009

$(Ba_{0.6},Sr_{0.3}Ca_{0.1})TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, $(Ba_{0.6},Sr_{0.3}Ca_{0.1})TiO_3$ array thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ (0.1~0.7 mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The thickness of all (Ba,Sr,Ca)$TiO_3$ thick films was approximately 60mm. The Curie temperature of doped with 0.1 mol% $Yb_2O_3$ specimen was $45^{\circ}C$, and the dielectric constant and at this temperature was 1062.

• 한국재료학회지
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• 제29권11호
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• pp.684-689
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• 2019

Single crystals, which have complexed composition, are fabricated by solid state grain growth. However, it is hard to achieve stable properties in a single crystal due to trapped pores. Aerosol deposition (AD) is suitable for fabrication of single crystals with stable properties because this process can make a high density coating layer. Because of their unique features (nano sized grains, stress inner site), it is hard to fabricate single crystals, and so studies of grain growth behavior of AD film are essential. In this study, a $BaTiO_3$ coating layer with ${\sim}9{\mu}m$ thickness is fabricated using an aerosol deposition method on (100) and (110) cut $SrTiO_3$ single crystal substrates, which are adopted as seeds for grain growth. Each specimen is heat-treated at various conditions (900, 1,100, and $1,300^{\circ}C$ for 5 h). $BaTiO_3$ layer shows different growth behavior and X-ray diffraction depending on cutting direction of $SrTiO_3$ seed. Rectangular pillars at $SrTiO_3$ (100) and laminating thin plates at $SrTiO_3$ (110), respectively, are observed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 추계학술발표회 초록집
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• pp.29-30
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• 1998

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.154.1-154.1
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• 2000