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| 1 |
Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition
Shim, K.H;Kim, S.H;Song, Y.J;Lee, N.E;Lim, J.W;Kang, J.Y;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.285-296,
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| 2 |
CMP Properties of Oxide Film with Various Pad Conditioning Temperatures
Choi, Gwon-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Lee, Woo-Sun;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.297-302,
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| 3 |
Electrochemical Corrosion and Chemical Mechanical Polishing(CMP) Characteristics of Tungsten Film using Mixed Oxidizer
Na, Eun-Young;Seo, Yong-Jin;Lee, Woo-Sun;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.303-308,
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| 4 |
Design of 13.56 MHz RFID Tag IC
Youn, Nam-Won;Kwon, Young-Jun;Shin, Bong-Jo;Park, Keun-Hyung;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.309-312,
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| 5 |
A Study on the Characteristics of Stick-slip Friction in CMP
Lee, Hyunseop;Park, Boumyoung;Seo, Heondeok;Park, Kihyun;Jeong, Haedo;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.313-320,
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| 6 |
Fixed Abrasive Pad with Self-conditioning in CMP Process
Park, Boumyoung;Lee, Hyunseop;Park, Kihyun;Seo, Heondeok;Jeong, Haedo;Kim, Hoyoun;Kim, Hyoungjae;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.321-326,
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| 7 |
Effect of the Hydrogen Annealing on the Pb(Zr0.52Ti0.48)O3 Film using (Pb0.72La0.28)Ti0.94O3 Buffers
Lee, Eun-Sun;Li, Dong-Hua;Chung, Hyun-Woo;Lim, Sung-Hoon;Lee, Sang-Yeol;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.327-329,
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| 8 |
Effects of the Transition Metal Oxides Substituted for Mg on the Electrical Conductivity of La0.8Sr0.2Ga0.8Mg0.2O3-δ -based Electrolytes
Park, Sang-Hyoun;Yoo, Kwang-Soo;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.330-337,
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| 9 |
Effects of (100) Orientation of LaNiO3 on the Growth and Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Films
Park, Min-Seok;Seo, Byung-Joon;Yoo, Young-Bae;Moon, Byung-Kee;Son, Se-Mo;Chung, Su-Tae;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.338-343,
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| 10 |
Electrical and Optical Characteristics of Plasma Display Panel Fabricated by Vacuum In-line Sealing
Park, Sung-Hyun;Lee, Neung-Hun;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.344-349,
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| 11 |
Study of Space Charge of Metal/copper(Ⅱ)-phthalocyanine Interface
Park, Mie-Hwa;Yoo, Hyun-Jun;Yoo, HyungKun;Na, Seunguk;Kim, Sonshui;Lee, Kie-Jin;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.350-356,
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| 12 |
Structure and Characteristics of Tandem Solar Cell Composed of Dye-sensitized Solar Cell and Thermoelectric Generator
Lee, Dong-Yoon;Song, Jae-Sung;Lee, Won-Jae;Kim, In-Sung;Jeong, Soon-Jong;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.357-362,
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| 13 |
Comparison of Operating Characteristics between Flux-lock Type and Resistive Type Superconducting Fault Current Limiters
Park, Hyoung-Min;Lim, Sung-Hun;Park, Chung-Ryul;Chol, Hyo-Sang;Han, Byoung-Sung;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.363-369,
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| 14 |
AC Loss Characteristic in the Fault Current Limiting Elements of a Coil Type
Ryu, Kyung-Woo;Ma, Yong-Ho;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.370-374,
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| 15 |
The Character of Electron Ionization and Attachment Coefficients in Perfluoropropane(C3F8) Molecular Gas by the Boltzmann Equation
Song, Byoung-Doo;Jeon, Byoung-Hoon;Ha, Sung-Chul;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.375-380,
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| 16 |
Measurement of Ar Temperature of Hollow Cathode Discharge Plasma
Lee, Jun-Hoi;Shin, Jae-Soo;Lee, Sung-Jik;Lee, Min-Soo;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.18, no.4, pp.381-385,
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