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반도체/디스플레이 공정 플라즈마 기초와 응용  

Jang, Hong-Yeong (한국과학기술원 물리학과)
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Information Display / v.12, no.5, 2011 , pp. 2-15 More about this Journal
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1 J. R. Roth, IndustrialPlasmaEngineering (IOP.,Bristol, 1995), Vol.1.
2 Y. P. Razier, Gas Discharge Physics(Springer-Verlag, Berlin,1991).
3 J. W. Coburn and H. F. Winters, Ann. Rev. Mater. Sci. 13,91(1983).   DOI
4 D. L. Tolliver, The History of Plasma Processing in VLSI Electronics Microstructure Science (Academic Press, Florida,1984), Vol.8.
5 S. M. Irving, Kodak Photoresist Sem. Proc., Vol.2, May, (1968)
6 S. Fang, S. Murakawa and J. P. Mcvittie, IEEE Trans. Electron Devices 41,1848(1994).   DOI
7 S. Ma, J. P. Mcvittie, and K. C. Sarawat, IEEE Trans. Electron Device Lett. 16,534(1995).   DOI
8 C. H. Chien, C. Y. Chang, H. C. Lin and T. Y. Huang, IEEE Trans. Electron Device Lett. 18,33(1997).   DOI
9 W. Kern and V. S. Ban, Thin Film Processes (Academic, NewYork,1978).
10 W. Kern and G. L. Schnable, IEEE Trans. Electron Devices ED-26,647(1979).
11 E. C. Douglas, Solid State Technol. 24,65(1981).
12 H. F. Sterling and R. C. G. Swann, Solid State Electron 8,653(1965)   DOI
13 A. R. Reinberg, Electrochemical Soc. 91 (1976).
14 H. Dun, P. Pan, F. R. White and R. W. Douse, J. Electrochem. Soc. 128,1556(1981).
15 V. S. Nguyen, Electrochem. Soc. Ext. Abs. 83-1, 216(1983).
16 W. Kern and R. S. Rosier, J. Vac. Sci. Technol. 14,1082 (1977).   DOI
17 G. M. Samuelson and K. M. Mar, J. Electrochem. Soc. 129,1773(1982).   DOI
18 K. Koyama, K. Takasaki, M. Maeda and M. Takagi 3rd. Symp. Plasma Processing, Vol. 82-6, Electrochem. Soc. 479 (1982).
19 W. A. Bryant, J. Electrochem. Soc. 125,1534(1978).   DOI
20 J. K. Chu, M. S. Thesis, University of California, Berkeley (1982).
21 K. Akimoto and K. Watanabe, Appl. Phys, Lett. 39,445(1981).   DOI
22 M. Sugawara, Practical Dry Etching Process, Realize, Tokyo, (1992).
23 J. Proud and R. A. Gottscho, Plasma Processing of Materials, Scientific Opportunities and Technological Challenges(NationalAcademy,Washington,1991).
24 E. S. G. Shaqfeh and C. W. Jurgensen, J. Appl. Phys. 66,4664(1989).   DOI
25 S. M. Rosnagel, J. J. Cuomo and W. D. Westwood, Handbook of Plasma Processing Technology (NoyesPublication, NewJersey,1990).
26 Y. Hikosaka, M. Nakamura and H. Sugai, Jpn. J. Appl. Phys. 33,2157(1994).   DOI
27 I. Alexeff and W. D. Jones, Appl. Phys. Lett. 9,77(1966)   DOI
28 N. Sato, S. Lizuka, T. Kozumi and T. Takada, Appl. Phys. Lett. 62,567(1993)   DOI
29 K.R.Mackenzie, R. J. Taylor, D. Cohn, E. Ault and H. Ikezi, Appl. Phys. Lett. 18,529(1971)   DOI
30 N. Herschkowitz, M. H. Cho and J. Pruski, Plasma Source Sci. Technol. 1,87(1992)   DOI
31 K. Kato, S. Lizuka and N. Sato, Appl. Phys. Lett. 65,816 (1994).   DOI
32 S. Ashida, C. Lee and M. A. Liberman, J. Vac. Sci. Technol. A13,2498(1995).
33 A. J. T. Holmes, Rev. Sci. Instrum. 53(10),1523(1982).   DOI
34 T. H. Ahn, Ph.D. -Thesis, University of Nagoya, Nagoya, Japan, March (1997).
35 T. Tajima, Computational Plasma Physics: Applications to Fusion and Astrophysics (Addison-Wesley,CA,1989).
36 C. K. Birdsall and A. B. Langdon, Plasma physicsvia Computer Simulation (McGraw-Hill, NewYork, 1985).
37 R. W. Hockney and J. W. Eastwood, Computer Simulation Using Particles(IOP., Bristol,1988).
38 A. D. Richards, B. E. Thompson and H. H. Sawin, Appl. Phys. Lett. 50,492(1987)   DOI
39 C. K. Birdsall, IEEE Trans. Plasma Sci. 19,65(1991).   DOI
40 R. K. Porteous, H. M. Wu and D. B. Graves, Plasma Sources Sci. and Technol. 3,25(1994).   DOI
41 M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (JohnWiley and Sons, NewYork,1994).
42 C. T. Gabriel and J. P. MoVittie, Solid State Technol. 81 (1992).
43 K. P. Shamrai, V. P. Pavlenko and V. B. Taranov, Plasma Phys. Control. Fusion 39,505(1997).   DOI
44 J. E. Stevens, Y. C. Huang, R. L. Jarecki and J. L. Cecchi, J. Vac. Sci. Technol. A10,1270(1992).
45 R. W. Boswell, Phys. Lett. A33,457(1970).
46 F. F. Chen, Plasma Phys. and Control. Fusion 33,339(1991).   DOI
47 J. Hopwood, Plasma Sources Sci. Techmol. 1,109 (1992)   DOI
48 V. A. Godyak, R. B. Piejak and B. M. Alexandrovich, Plasma Sources Sci. Technol. 1, 36 (1992).   DOI
49 G. R. Branner, E. M. Friar and G. Medicus, Rev. Sci. Instrument 34,231(1962).
50 F. M. Ma and S. Taylor, IEE Proc.-Sci. Meas. Technol. 143,71(1996).   DOI
51 G. Bruno, P. Capezzuto and G. Cicala, J. Appl. Phys. 69,7256(1991).   DOI
52 R. A. Gottscho and T. A. Miller, Pure Appl. Chem. 56,189(1984).   DOI
53 A. A. Howling, J. L. Dorier and C. Hollenstein, Appl. Phys. Lett. 62,1341(1993).   DOI
54 J. S. Logan and J. J. McGill, J. Vac. Sci. Technol. A10,1875(1992).
55 G. H. Bai, S. H. Seo and H. Y. Chang, J. Korean Vac. Soc. 7,273(1998).
56 S. Samukawa and T. Nakano, J. Vac. Sci. Technol. A14,1002(1996).