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| 1 |
A study on the SiC single crystal growth conditions by the resistance heating method
Kang, Seung-Min;
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The Korea Association of Crystal Growth
, v.26, no.2, pp.53-57,
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| 2 |
Growth and characterization of bulk GaN single crystals by basic ammonothermal method
Shim, Jang Bo;Lee, Young Kuk;
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The Korea Association of Crystal Growth
, v.26, no.2, pp.58-61,
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| 3 |
Characterization of crack self-healing of silicon carbide by hot press sintering
Kim, Seong-Hoon;Kim, Kyung-Hun;Dow, Hwan-Soo;Park, Joo-Seok;Kim, Kyung-Ja;Shim, Kwang-Bo;
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The Korea Association of Crystal Growth
, v.26, no.2, pp.62-66,
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| 4 |
Thermal shock behaviors of TiN coatings on Inconel 617 and Silicon wafer substrates with finite element analysis method
Lee, Ki-Seuk;Jeon, Seol;Cho, Hyun;Lee, Heesoo;
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The Korea Association of Crystal Growth
, v.26, no.2, pp.67-73,
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| 5 |
Growth and characterization of LaxSryMnzO3 nanorod
Kim, Young Jung;
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The Korea Association of Crystal Growth
, v.26, no.2, pp.74-79,
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| 6 |
The effect of thickness on luminous properties of ceramic phosphor plate for high-power LD
Ji, Eun Kyung;Lee, Chul Woo;Song, Young Hyun;Jeong, Byung Woo;Jung, Mong Kown;Yoon, Dae-Ho;
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The Korea Association of Crystal Growth
, v.26, no.2, pp.80-83,
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| 7 |
Dependance of hot-zone position on AlN single crystal growth by PVT method
Yin, Gyong-Phil;Kang, Seung-Min;
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The Korea Association of Crystal Growth
, v.26, no.2, pp.84-88,
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