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JSTS:Journal of Semiconductor Technology and Science  

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1 Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device
Kim, Sungjun;Cho, Seongjae;Park, Byung-Gook; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.147-152,
2 Characterization of Stiffness Coefficients of Silicon Versus Temperature using "Poisson's Rati" Measurements
Cho, Chun-Hyung;Cha, Ho-Young;Sung, Hyuk-Kee; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.153-158,
3 High-Speed Low-Power Junctionless Field-Effect Transistor with Ultra-Thin Poly-Si Channel for Sub-10-nm Technology Node
Kim, Youngmin;Lee, Junsoo;Cho, Yongbeom;Lee, Won Jae;Cho, Seongjae; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.159-165,
4 Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs
SEOK, Ki Hwan;Kim, Hyung Yoon;Park, Jae Hyo;Lee, Sol Kyu;Lee, Yong Hee;Joo, Seung Ki; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.166-171,
5 Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications
Yoon, Young Jun;Seo, Jae Hwa;Cho, Seongjae;Kwon, Hyuck-In;Lee, Jung-Hee;Kang, In Man; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.172-178,
6 Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts
Ha, Min-Woo;Choi, Kangmin;Jo, Yoo Jin;Jin, Hyun Soo;Park, Tae Joo; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.179-184,
7 Impact of Trap Position on Random Telegraph Noise in a 70-Å Nanowire Field-Effect Transistor
Lee, Hyunseul;Cho, Karam;Shin, Changhwan;Shin, Hyungcheol; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.185-190,
8 3D TCAD Analysis of Hot-Carrier Degradation Mechanisms in 10 nm Node Input/Output Bulk FinFETs
Son, Dokyun;Jeon, Sangbin;Kang, Myounggon;Shin, Hyungcheol; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.191-197,
9 Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors
Song, Chang-Woo;Kim, Kyung-Hyun;Yang, Ji-Woong;Kim, Dae-Hwan;Choi, Yong-Jin;Hong, Chan-Hwa;Shin, Jae-Heon;Kwon, Hyuck-In;Song, Sang-Hun;Cheong, Woo-Seok; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.198-203,
10 Analysis on Self-Heating Effect in 7 nm Node Bulk FinFET Device
Yoo, Sung-Won;Kim, Hyunsuk;Kang, Myounggon;Shin, Hyungcheol; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.204-209,
11 A Study on Contact Resistance Reduction in Ni Germanide/Ge using Sb Interlayer
Kim, Jeyoung;Li, Meng;Lee, Ga-Won;Oh, Jungwoo;Lee, Hi-Deok; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.210-214,
12 Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor
Park, Sung-Hoon;Lee, Jae-Gil;Cho, Chun-Hyung;Choi, Yearn-Ik;Kim, Hyungtak;Cha, Ho-Young; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.215-220,
13 Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode
Han, Sang-Woo;Park, Sung-Hoon;Kim, Hyun-Seop;Lim, Jongtae;Cho, Chun-Hyung;Cha, Ho-Young; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.221-225,
14 Efficient Pre-Bond Testing of TSV Defects Based on IEEE std. 1500 Wrapper Cells
Jung, Jihun;Ansari, Muhammad Adil;Kim, Dooyoung;Park, Sungju; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.226-235,
15 Critical Review of Current Trends in ASIC Writing and Layout Analysis
Vikram, Abhishek;Agarwal, Vineeta; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.236-250,
16 An Energy-Efficient Matching Accelerator Using Matching Prediction for Mobile Object Recognition
Choi, Seongrim;Lee, Hwanyong;Nam, Byeong-Gyu; / The Institute of Electronics and Information Engineers , v.16, no.2, pp.251-254,