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| 1 |
A Fast Low Dropout Regulator with High Slew Rate and Large Unity-Gain Bandwidth
Ko, Younghun;Jang, Yeongshin;Han, Sok-Kyun;Lee, Sang-Gug;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.263-271,
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| 2 |
A 12 mW ADPLL Based G/FSK Transmitter for Smart Utility Network in 0.18 ㎛ CMOS
Park, Hyung-Gu;Kim, Hongjin;Lee, Dong-Soo;Yu, Chang-Zhi;Ku, Hyunchul;Lee, Kang-Yoon;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.272-281,
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| 3 |
A Spread Spectrum Clock Generator for DisplayPort 1.2 with a Hershey-Kiss Modulation Profile
Oh, Seung-Wook;Park, Hyung-Min;Moon, Yong-Hwan;Kang, Jin-Ku;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.282-290,
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| 4 |
Application-aware Design Parameter Exploration of NAND Flash Memory
Bang, Kwanhu;Kim, Dong-Gun;Park, Sang-Hoon;Chung, Eui-Young;Lee, Hyuk-Jun;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.291-302,
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| 5 |
Multi-channel 5Gb/s/ch SERDES with Emphasis on Integrated Novel Clocking Strategies
Zhang, Changchun;Li, Ming;Wang, Zhigong;Yin, Kuiying;Deng, Qing;Guo, Yufeng;Cao, Zhengjun;Liu, Leilei;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.303-317,
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| 6 |
A High-Linearity Low-Noise Reconfiguration-Based Programmable Gain Amplifier
Han, Seok-Kyun;Nguyen, Huy-Hieu;Lee, Sang-Gug;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.318-330,
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| 7 |
Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT
Bhattacharya, Monika;Jogi, Jyotika;Gupta, R.S.;Gupta, Mridula;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.331-341,
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| 8 |
Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT
Verma, Neha;Gupta, Mridula;Gupta, R.S.;Jogi, Jyotika;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.342-354,
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| 9 |
A Wireless Intraocular Pressure Sensor with Variable Inductance Using a Ferrite Material
Kang, Byungjoo;Hwang, Hoyong;Lee, Soo Hyun;Kang, Ji Yoon;Park, Joung-Hu;Seo, Chulhun;Park, Changkun;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.355-360,
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| 10 |
Full-Range Analytic Drain Current Model for Depletion-Mode Long-Channel Surrounding-Gate Nanowire Field-Effect Transistor
Yu, Yun Seop;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.361-366,
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| 11 |
An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates
Bhushan, Shiv;Sarangi, Santunu;Gopi, Krishna Saramekala;Santra, Abirmoya;Dubey, Sarvesh;Tiwari, Pramod Kumar;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.367-380,
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| 12 |
A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect
Lee, Jaelin;Kim, Suna;Hong, Jong-Phil;Lee, Sang-Gug;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.381-386,
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| 13 |
Hydrogen Plasma Characteristics for Photoresist Stripping Process in a Cylindrical Inductively Coupled Plasma
Yang, Seung-Kook;Cho, Jung Hee;Lee, Seong-Wook;Lee, Chang-Won;Park, Sang-Jong;Chae, Hee-Sun;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.387-394,
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| 14 |
Use of In-Situ Optical Emission Spectroscopy for Leak Fault Detection and Classification in Plasma Etching
Lee, Ho Jae;Seo, Dong-Sun;May, Gary S.;Hong, Sang Jeen;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.395-401,
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| 15 |
Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection
Chen, Hunglin;Fan, Rongwei;Lou, Hsiaochi;Kuo, Mingsheng;Huang, Yiping;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.402-409,
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| 16 |
Development of sacrificial layer wet etch process of TiNi for nano-electro-mechanical device application
Park, Byung Kyu;Choi, Woo Young;Cho, Eou Sik;Cho, Il Hwan;
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The Institute of Electronics and Information Engineers
, v.13, no.4, pp.410-414,
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