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http://dx.doi.org/10.5573/JSTS.2013.13.3.245

The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling  

Wu, Meile (School of Information Science and Engineering, Shenyang University of Technology)
Jin, Xiaoshi (School of Information Science and Engineering, Shenyang University of Technology)
Kwon, Hyuck-In (School of Electrical and Electronics Engineering, Chung-Ang University)
Chuai, Rongyan (School of Information Science and Engineering, Shenyang University of Technology)
Liu, Xi (School of Information Science and Engineering, Shenyang University of Technology)
Lee, Jong-Ho (School of EECS Eng. and ISRC (Inter-University Semiconductor Research Center), Seoul National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.13, no.3, 2013 , pp. 245-251 More about this Journal
Abstract
The effect of band-to-band tunneling (BTBT) leads to an obvious increase of the leakage current of junctionless (JL) transistors in the OFF state. In this paper, we propose an effective method to decline the influence of BTBT with the example of n-type double gate (DG) JL metal-oxide-semiconductor field-effect transistors (MOSFETs). The leakage current is restrained by changing the geometrical shape and the physical dimension of the gate of the device. The optimal design of the JL MOSFET is indicated for reducing the effect of BTBT through simulation and analysis.
Keywords
Band-to-band tunneling (BTBT); double-gate (DG); junctionless field-effect transistor (JL FET); device simulation; optimal design;
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