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| 1 |
A 500 MHz-to-1.2 GHz Reset Free Delay Locked Loop for Memory Controller with Hysteresis Coarse Lock Detector
Chi, Han-Kyu;Hwang, Moon-Sang;Yoo, Byoung-Joo;Choe, Won-Jun;Kim, Tae-Ho;Moon, Yong-Sam;Jeong, Deog-Kyoon;
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The Institute of Electronics and Information Engineers
, v.11, no.2, pp.73-79,
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| 2 |
Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate-All-Around PMOS Silicon Nanowire Field-Effect-Transistors
Hong, Byoung-Hak;Lee, Seong-Joo;Hwang, Sung-Woo;Cho, Keun-Hwi;Yeo, Kyoung-Hwan;Kim, Dong-Won;Jin, Gyo-Young;Park, Dong-Gun;
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The Institute of Electronics and Information Engineers
, v.11, no.2, pp.80-87,
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| 3 |
Design of 1-Kb eFuse OTP Memory IP with Reliability Considered
Kim, Jeong-Ho;Kim, Du-Hwi;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee;
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The Institute of Electronics and Information Engineers
, v.11, no.2, pp.88-94,
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| 4 |
A 6b 1.2 GS/s 47.8 mW 0.17 mm2 65 nm CMOS ADC for High-Rate WPAN Systems
Park, Hye-Lim;Kwon, Yi-Gi;Choi, Min-Ho;Kim, Young-Lok;Lee, Seung-Hoon;Jeon, Young-Deuk;Kwon, Jong-Kee;
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The Institute of Electronics and Information Engineers
, v.11, no.2, pp.95-103,
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| 5 |
Design of a 25 mW 16 frame/s 10-bit Low Power CMOS Image Sensor for Mobile Appliances
Kim, Dae-Yun;Song, Min-Kyu;
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The Institute of Electronics and Information Engineers
, v.11, no.2, pp.104-110,
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| 6 |
Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET
Suh, Chung-Ha;
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The Institute of Electronics and Information Engineers
, v.11, no.2, pp.111-120,
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| 7 |
A High Performance Co-design of 26 nm 64 Gb MLC NAND Flash Memory using the Dedicated NAND Flash Controller
You, Byoung-Sung;Park, Jin-Su;Lee, Sang-Don;Baek, Gwang-Ho;Lee, Jae-Ho;Kim, Min-Su;Kim, Jong-Woo;Chung, Hyun;Jang, Eun-Seong;Kim, Tae-Yoon;
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The Institute of Electronics and Information Engineers
, v.11, no.2, pp.121-129,
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| 8 |
Accuracy Analysis of Extraction Methods for Effective Channel Length in Deep-Submicron MOSFETs
Kim, Ju-Young;Choi, Min-Kwon;Lee, Seong-Hearn;
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The Institute of Electronics and Information Engineers
, v.11, no.2, pp.130-133,
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