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| 1 |
A Multiphase Compensation Method with Dynamic Element Matching Technique in Σ-Δ Fractional-N Frequency Synthesizers
Chen, Zuow-Zun;Lee, Tai-Cheng;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.179-192,
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| 2 |
A Combined Clock and Data Recovery Circuit with Adaptive Cancellation of Data-Dependent Jitter
Lee, Jin-Hee;Kim, Su-Hwan;Jeong, Deog-Kyoon;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.193-199,
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| 3 |
A Continuously Tunable LC-VCO PLL with Bandwidth Linearization Techniques for PCI Express Gen2 Applications
Rhee, Woo-Geun;Ainspan, Herschel;Friedman, Daniel J.;Rasmus, Todd;Garvin, Stacy;Cranford, Clay;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.200-209,
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| 4 |
Surpassing Tradeoffs by Separation: Examples in Transmission Line Resonators, Phase-Locked Loops, and Analog-to-Digital Converters
Sun, Nan;Andress, William F.;Woo, Kyoung-Ho;Ham, Don-Hee;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.210-220,
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| 5 |
An Analytical Modeling of Threshold Voltage and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for High Speed Wireless Communication
Balamurugan, N.B.;Sankaranarayanan, K.;Amutha, P.;John, M. Fathima;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.221-226,
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| 6 |
Design of a Latchup-Free ESD Power Clamp for Smart Power ICs
Park, Jae-Young;Kim, Dong-Jun;Park, Sang-Gyu;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.227-231,
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| 7 |
Enhanced fT and fMAX SiGe BiCMOS Process and Wideband Power Efficient Medium Power Amplifier
Bae, Hyun-Cheol;Oh, Seung-Hyeub;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.232-238,
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| 8 |
Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure
Yousif, Afnan K.;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.239-243,
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| 9 |
A Reproducible High Etch Rate ICP Process for Etching of Via-Hole Grounds in 200μm Thick GaAs MMICs
Rawal, D.S.;Agarwal, Vanita R.;Sharma, H.S.;Sehgal, B.K.;Muralidharan, R.;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.244-250,
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| 10 |
Simulation of 4H-SiC MESFET for High Power and High Frequency Response
Chattopadhyay, S.N.;Pandey, P.;Overton, C.B.;Krishnamoorthy, S.;Leong, S.K.;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.251-263,
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| 11 |
Theoretical Study of Electron Mobility in Double-Gate Field Effect Transistors with Multilayer (strained-)Si/SiGe Channel
Walczak, Jakub;Majkusiak, Bogdan;
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The Institute of Electronics and Information Engineers
, v.8, no.3, pp.264-275,
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