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| 1 |
Fabrication and Electrical Properties of Local Damascene FinFET Cell Array in Sub-60nm Feature Sized DRAM
Kim, Yong-Sung;Shin, Soo-Ho;Han, Sung-Hee;Yang, Seung-Chul;Sung, Joon-Ho;Lee, Dong-Jun;Lee, Jin-Woo;Chung, Tae-Young;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.61-67,
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| 2 |
Low Voltage Program/Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer
Choe, Jeong-Dong;Yeo, Kyoung-Hwan;Ahn, Young-Joon;Lee, Jong-Jin;Lee, Se-Hoon;Choi, Byung-Yong;Sung, Suk-Kang;Cho, Eun-Suk;Lee, Choong-Ho;Kim, Dong-Won;Chung, Il-Sub;Park, Dong-Gun;Ryu, Byung-Il;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.68-73,
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| 3 |
High Speed Pulse-based Flip-Flop with Pseudo MUX-type Scan for Standard Cell Library
Kim, Min-Su;Han, Sang-Shin;Chae, Kyoung-Kuk;Kim, Chung-Hee;Jung, Gun-Ok;Kim, Kwang-Il;Park, Jin-Young;Shin, Young-Min;Park, Sung-Bae;Jun, Young-Hyun;Kong, Bai-Sun;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.74-78,
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| 4 |
Effects on Optical Characteristics of GaN Polarity Controlled by Substrate
Kang, Sang-Won;Shim, Hyun-Wook;Lee, Dong-Yul;Han, Sang-Heon;Kim, Dong-Joon;Kim, Je-Won;Oh, Bang-Won;Kryliouk, Olga;Anderson, Timothy J.;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.79-86,
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| 5 |
?Color STN (CSTN) LCD Driver Integrated Circuit with Sense Amplifier of Non-Volatile Memory
Shin, Chang-Hee;Cho, Ki-Seok;Lee, Yong-Sup;Lee, Jae-Hoon;Sohn, Ki-Sung;Kwon, Oh-Kyong;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.87-89,
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| 6 |
?Growth and Characterization of InGaN/GaN MQWs on Two Different Types of Substrate
Kim, Taek-Sung;Park, Jae-Young;Cuong, Tran Viet;Hong, Chang-Hee;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.90-94,
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| 7 |
Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Formation by Ion-cut Process
Woo, Hyung-Joo;Choi, Han-Woo;Kim, Joon-Kon;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.95-100,
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| 8 |
Nanoscale Floating-Gate Characteristics of Colloidal Au Nanoparticles Electrostatically Assembled on Si Nanowire Split-Gate Transistors
Jeon, Hyeong-Seok;Park, Bong-Hyun;Cho, Chi-Won;Lim, Chae-Hyun;Ju, Heong-Kyu;Kim, Hyun-Suk;Kim, Sang-Sig;Lee, Seung-Beck;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.101-105,
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| 9 |
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with $} "$Si_{0.88}Ge_{0.12}(C)$") Heterostructure Channel
Choi, Sang-Sik;Yang, Hyun-Duk;Han, Tae-Hyun;Cho, Deok-Ho;Kim, Jea-Yeon;Shim, Kyu-Hwan;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.106-113,
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| 10 |
Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-conversion Mixer
Lee, Sang-Heung;Kim, Sang-Hoon;Lee, Ja-Yol;Bae, Hyun-Cheol;Lee, Seung-Yun;Kang, Jin-Yeong;Kim, Bo-Woo;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.114-118,
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| 11 |
Fabrication and Characteristics Study of  /n-Si Heterojunction
Ismail, Raid A.;
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The Institute of Electronics and Information Engineers
, v.6, no.2, pp.119-123,
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