|
| 1 |
NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices
Jin, Seong-Hoon;Park, Chan-Hyeong;Chung, In-Young;Park, Young-June;Min, Hong-Shick;
/
The Institute of Electronics and Information Engineers
, v.6, no.1, pp.1-9,
|
|
| 2 |
Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications
Jang, Moon-Gyu;Kim, Yark-Yeon;Jun, Myung-Sim;Choi, Chel-Jong;Kim, Tae-Youb;Park, Byoung-Chul;Lee, Seong-Jae;
/
The Institute of Electronics and Information Engineers
, v.6, no.1, pp.10-15,
|
|
| 3 |
Fabrication of p-type FinFETs with a 20 nm Gate Length using Boron Solid Phase Diffusion Process
Cho, Won-Ju;
/
The Institute of Electronics and Information Engineers
, v.6, no.1, pp.16-21,
|
|
| 4 |
Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance
Kim, Sung-Min;Yoon, Eun-Jung;Kim, Min-Sang;Li, Ming;Oh, Chang-Woo;Lee, Sung-Young;Yeo, Kyoung-Hwan;Kim, Sung-Hwan;Choe, Dong-Uk;Suk, Sung-Dae;Kim, Dong-Won;Park, Dong-Gun;
/
The Institute of Electronics and Information Engineers
, v.6, no.1, pp.22-29,
|
|
| 5 |
Partially-insulated MOSFET (PiFET) and Its Application to DRAM Cell Transistor
Oh, Chang-Woo;Kim, Sung-Hwan;Yeo, Kyoung-Hwan;Kim, Sung-Min;Kim, Min-Sang;Choe, Jeong-Dong;Kim, Dong-Won;Park, Dong-Gun;
/
The Institute of Electronics and Information Engineers
, v.6, no.1, pp.30-37,
|
|
| 6 |
1/f Noise Characteristics of Sub-100 nm MOS Transistors
Lee, Jeong-Hyun;Kim, Sang-Yun;Cho, Il-Hyun;Hwang, Sung-Bo;Lee, Jong-Ho;
/
The Institute of Electronics and Information Engineers
, v.6, no.1, pp.38-42,
|
|
| 7 |
Characterization and Design Consideration of 80-nm Self-Aligned N-/P-Channel I-MOS Devices
Choi, Woo-Young;Lee, Jong-Duk;Park, Byung-Gook;
/
The Institute of Electronics and Information Engineers
, v.6, no.1, pp.43-51,
|
|
| 8 |
Single-Electron Logic Cells and SET/FET Hybrid Integrated Circuits
Kim, S.J.;Lee, C.K.;Lee, J.U.;Choi, S.J.;Hwang, J.H.;Lee, S.E.;Choi, J.B.;Park, K.S.;Lee, W.H.;Paik, I.B.;Kang, J.S.;
/
The Institute of Electronics and Information Engineers
, v.6, no.1, pp.52-58,
|
|