Partially-insulated MOSFET (PiFET) and Its Application to DRAM Cell Transistor |
Oh, Chang-Woo
(Device Research Team, R&D Center, Samsung Electronics Co.)
Kim, Sung-Hwan (Device Research Team, R&D Center, Samsung Electronics Co.) Yeo, Kyoung-Hwan (Device Research Team, R&D Center, Samsung Electronics Co.) Kim, Sung-Min (Device Research Team, R&D Center, Samsung Electronics Co.) Kim, Min-Sang (Device Research Team, R&D Center, Samsung Electronics Co.) Choe, Jeong-Dong (Device Research Team, R&D Center, Samsung Electronics Co.) Kim, Dong-Won (Device Research Team, R&D Center, Samsung Electronics Co.) Park, Dong-Gun (Device Research Team, R&D Center, Samsung Electronics Co.) |
1 | A. Hiraiwa, M. Orasawara, N. Natsuaki, Y. Itoh, and H. Iwai, 'Local-field-enhancement model of DRAM retention failure,' Technical Digest of IEDM, pp.157-160, December 1998 DOI |
2 | S. Kamohara, K. Kubota, M. Moniwa, K. Ohyu, and A. Ogishima, 'Statistical PN junction leakage model with trap level fluctuation for Tref (refresh time)-oriented DRAM design,' Technical Digest of IEDM, pp.539-542, December1999 DOI |
3 | D. Suh and J. Fossum, 'Dynamic floating-body instability in partially depleted SOI CMOS circuits,' Technical Digest of IEDM, pp.661-664, December 1994 DOI |
4 | S. -M. Kim, C. ?W. Oh, J. ?D. Choe, C. ?S. Lee, and D. Park, 'A study on selective etch using polysilicon etchant diluted by for threedimensional Si structure application,' SOI Tech. Dev. XI in international meeting of ECS, pp.81-85, April 2003 |
5 | O. Rozeau, J. Jomaah, J. Boussey, C. Raynaud, J. L. Pelloie, and F. Balestra, 'Impact of floating body and BS-tied architectures on SOI MOSFET's radio-frequency performances,' Technical Digest of SOI Conference, pp.124-125, October 2000 DOI |
6 | C. -W. Oh, S. -H. Kim, C. -S. Lee; J. -D. Choe, S. -A. Lee, S. -Y. Lee, K. -H. Yeo, H. -J. Jo, E. -J. Yoon, S. -J. Hyun, D. Park, and K. Kim, 'Highly manufacturable sub-50 nm high performance CMOSFET using real damascene gate process,' Technical Digest of VLSI, pp.147-148, June 2003 |
7 | W. -K. Yeh, W. -H. Wang, Y. -K. Fang, and F. -L. Yang., 'Temperature depedence of hot-carrierinduced degradation in 0.1 SOI nMOSFETs with thin oxide,' IEEE Electron Device Leters., vol. 23, issue 7, no. 7, pp.425-427, July 2002 DOI ScienceOn |