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| 1 |
Improved Breakdown Voltage Characteristics of  p-HEMT with an Oxidized GaAs Gate
I-H. Kang;Lee, J-W.;S-J. Kang;S-J. Jo;S-K. In;H-J. Song;Kim, J-H.;J-I. Song;
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The Institute of Electronics and Information Engineers
, v.3, no.2, pp.63-68,
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| 2 |
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Shin, S.H.;Lee, S.H.;Kim, Y.S.;Heo, J.H.;Bae, D.I.;Hong, S.H.;Park, S.H.;Lee, J.W.;Lee, J.G.;Oh, J.H.;Kim, M.S.;Cho, C.H.;Chung, T.Y.;Kim, Ki-Nam;
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The Institute of Electronics and Information Engineers
, v.3, no.2, pp.69-75,
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| 3 |
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Park, Y.K.;Y.S. Ahn;Lee, K.H.;C.H. Cho;T.Y. Chung;Kim, Kinam;
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The Institute of Electronics and Information Engineers
, v.3, no.2, pp.76-82,
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| 4 |
CCD Image Sensor with Variable Reset Operation
Park, Sang-Sik;Uh, Hyung-Soo;
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The Institute of Electronics and Information Engineers
, v.3, no.2, pp.83-88,
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| 5 |
High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT
Uhm, Won-Young;Lee, Bok-Hyung;Kim, Sung-Chan;Lee, Mun-Kyo;Sul, Woo-Suk;Yi, Sang-Yong;Kim, Yong-Hoh;Rhee, Jin-Koo;
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The Institute of Electronics and Information Engineers
, v.3, no.2, pp.89-95,
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| 6 |
Investigation of Oxygen Incorporation in AlGaN/GaN Heterostructures
Jang, Ho-Won;Baik, Jeong-Min;Lee, Jong-Lam;Shin, Hyun-Joon;Lee, Jung-Hee;
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The Institute of Electronics and Information Engineers
, v.3, no.2, pp.96-101,
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| 7 |
Dual Edge-Triggered NAND-Keeper Flip-Flop for High-Performance VLSI
Kim, Jae-Il;Kong, Bai-Sun;
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The Institute of Electronics and Information Engineers
, v.3, no.2, pp.102-106,
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