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| 1 |
Analysis of Electrical Properties of Ti/Pt/Au Schottky Contacts on (n)GaAs Formed by Electron Beam Deposition and RF Sputtering
Sehgal, B-K;Balakrishnan, V-R;R Gulati;Tewari, S-P;
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The Institute of Electronics and Information Engineers
, v.3, no.1, pp.1-12,
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| 2 |
Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R.;Gila, B.P.;Onstine, A.H.;Pearton, S.J.;Kim, Ji-Hyun;Luo, B.;Mehandru, R.;Ren, F.;Gillespie, J.K.;Fitch, R.C.;Seweel, J.;Dettmer, R.;Via, G.D.;Crespo, A.;Jenkins, T.J.;Irokawa, Y.;
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The Institute of Electronics and Information Engineers
, v.3, no.1, pp.13-20,
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| 3 |
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source
Jung, P.G.;Lim, W.T.;Cho, G.S.;Jeon, M.H.;Lee, J.W.;Nigam, S.;Ren, F.;Chung, G.Y.;Macmillan, M.F.;Pearton, S.J.;
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The Institute of Electronics and Information Engineers
, v.3, no.1, pp.21-26,
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| 4 |
40nm InGaAs HEMT's with 65％ Strained Channel Fabricated with Damage-Free  Side-wall Gate Process
Kim, Dae-Hyun;Kim, Suk-Jin;Kim, Young-Ho;Kim, Sung-Wong;Seo, Kwang-Seok;
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The Institute of Electronics and Information Engineers
, v.3, no.1, pp.27-32,
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| 5 |
Process Optimization for High Frequency Performance of InP-Based Heterojunction Bipolar Transistors
Song, Yongjoo;Jeong, Yongsik;Yang, Kyounghoon;
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The Institute of Electronics and Information Engineers
, v.3, no.1, pp.33-41,
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| 6 |
Design of Broad Band Amplifier Using Feedback Technique
Kang, Tae-Shin;Rhee, Jin-Koo;
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The Institute of Electronics and Information Engineers
, v.3, no.1, pp.42-46,
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| 7 |
On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications
Youn S. Noh;Kim, Ji H.;Kim, Joon H.;Kim, Song G.;Park, Chul S.;
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The Institute of Electronics and Information Engineers
, v.3, no.1, pp.47-54,
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| 8 |
Design Sensitivity in Quasi-One-Dimensional Silicon-Based Photonic Crystalline Waveguides
Kinoshita, Takeshi;Shimizu, Akira;Iida, Yukio;Omura, Yasuhisa;
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The Institute of Electronics and Information Engineers
, v.3, no.1, pp.55-61,
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