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1 |
A New EEPROM with Side Floating Gates Having Different Work Function from Control Gate
Youngjoon Ahn;Sangyeon Han;Kim, Hoon;Lee, Jongho;Hyungcheol Shin;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.157-163,
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2 |
Aspects of Hard Breakdown Characteristics in a 2.2-nm-thick Film
Komiya, Kenji;Omura, Yasuhisa;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.164-169,
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3 |
Field Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory
Li, Shuwei;Koike, Kazuto;Yano, Mitsuaki;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.170-172,
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4 |
A Novel Sensing Circuit for 2T-2MTJ MRAM Applicable to High Speed Synchronous Operation
Jang, Eun-Jung;Lee, Jung-Hwa;Kim, Ji-hyun;Lee, Seungjun;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.173-179,
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5 |
Metal Gate Electrodes for Advanced CMOS Devices
Lee, S. J.;D. L. Kwong;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.180-184,
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6 |
MRAM Technology for High Density Memory Application
Kim, Chang-Shuk;Jang, In-Woo;Lee, Kye-Nam;Lee, Seaung-Suk;Park, Sung-Hyung;Park, Gun-Sook;Ban, Geun-Do;Park, Young-Jin;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.185-196,
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7 |
Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Park, Wanjun;Song, I-Hun;Park, Sangjin;Kim, Teawan;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.197-204,
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8 |
Metal-Organic Chemical Vapor Deposition of Thin Films for High-Density Ferroelectric Random Access Memory Application
Lee, June-Key;Ku, June-Mo;Cho, Chung-Rae;Lee, Yong-Kyun;Sangmin Shin;Park, Youngsoo;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.205-212,
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9 |
Device characterization and Fabrication Issues for Ferroelectric Gate Field Effect Transistor Device
Yu, Byoung-Gon;You, In-Kyu;Lee, Won-Jae;Ryu, Sang-Ouk;Kim, Kwi-Dong;Yoon, Sung-Min;Cho, Seong-Mok;Lee, Nam-Yeal;Shin, Woong-Chul;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.213-225,
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10 |
Virtual ground monitoring for high fault coverage of linear analog circuits
Roh, Jeongjin;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.226-232,
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11 |
Optimum Design of the Interdigitated CB Structure
qiang, Yang-Hong;bi, Chen-Xing;
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The Institute of Electronics and Information Engineers
, v.2, no.3, pp.233-236,
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