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| 1 |
Modeling and Optimization of  gate Metamorphic High Electron Mobility Transistors
Han Min;Kim Sam-Dong;Rhee Jin-Koo;
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The Institute of Electronics and Information Engineers
, v.42, no.3, pp.1-8,
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| 2 |
Electron Mobility Model in Strained Si Inversion Layer
Park Il-Soo;Won Taeyoung;
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The Institute of Electronics and Information Engineers
, v.42, no.3, pp.9-16,
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| 3 |
Optical packaging technology and characterization of analog PIN-Photodiode
Lee Chang Min;Kwon Kee Young;
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The Institute of Electronics and Information Engineers
, v.42, no.3, pp.17-24,
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| 4 |
Characterization of Electrical Crosstalk in 1.25 Gbps Optoelectrical Triplex Transceiver Module for Ethernet Passive Optical Networks
Kim Sung-Il;Lee Hai-Young;
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The Institute of Electronics and Information Engineers
, v.42, no.3, pp.25-34,
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| 5 |
A New Reseeding Methodology Using a Variable-Length Multiple-Polynomial LFSR
Yang Myung-Hoon;Kim Youbean;Lee Yong;Park Hyuntae;Kang Sungho;
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The Institute of Electronics and Information Engineers
, v.42, no.3, pp.35-42,
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| 6 |
Design of Synchronous Quaternary Counter using Quaternary Logic Gate Based on Neuron-MOS
Choi Young-Hee;Yoon Byoung-Hee;Kim Heung-Soo;
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The Institute of Electronics and Information Engineers
, v.42, no.3, pp.43-50,
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