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Accurate Extraction of the Effective Channel Length of MOSFET Using Capacitance Voltage Method  

김용구 (충남대학교 전자공학과)
지희환 (충남대학교 전자공학)
한인식 (충남대학교 전자공학)
박성형 (하이닉스 반도)
이희덕 (충남대학교 전자공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.7, 2004 , pp. 1-6 More about this Journal
Abstract
For MOSFET devices with nanometer range gate length, accurate extraction of effective gate length is highly important because transistor characteristics become very sensitive to effective channel length. In this paper, we propose a new approach to extract the effective channel length of nanometer range MOSFET by Capacitance Voltage(C-V) method. The effective channel length is extracted using gate to source/drain capacitance( $C_{gsd}$). It is shown that 1/$\beta$ method, Terada method and other C-V method are inadequate to extract the accurate effective channel length. Therefore, the proposed method is highly effective for extraction of effective channel length of 100nm CMOSFETs.s.
Keywords
Effective Channel Length; Capacitance Voltage Method; sub 100nm CMOSFETs.;
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