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Evidence of Material-dependent and Temperature- dependent Quenching Rates by Infrared Imaging in S.I. GaAs  

강성준 (목포대학교 정보공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.7, 2003 , pp. 469-473 More about this Journal
Abstract
The effect of photoquenching on infrared image of the EL2 center in semi-insulating(S.I.) GaAs has been studied using near infrared transmission techniques. Particular interest is devoted to as-grown and annealed samples of undoped S.I. GaAs. It is found that the quenching mechanism is different in each sample and also the quenching rate is dependent on the materials and the quenching temperature which is somewhat inconsistent with other existing publications.
Keywords
S.I. GaAs; EL2; Photoquenching; Quenching rate; Infrared imaging;
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