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Analysis of Anomalous Subthreshold Characteristics in Ligtly-Doped Asymmetric Double-Gate MOSFETs  

이혜림 (이화여자대학교 정보통신학과)
신형순 (이화여자대학교 정보통신학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.6, 2003 , pp. 379-383 More about this Journal
Abstract
The subthreshold characteristics of Double-Gate MOSFETs are analyzed for various Tsi. In the lightly-doped asymmetric device, it is found that the subthreshold current dramatically increases as the Tsi increases and this phenomenon is due to the linear distribution of potential in the channel region with low depletion-charge. Further, we derived an analytical equation which can explain this phenomenon and verified the accuracy of analytical equation by comparing with the result of device simulation.
Keywords
MOSFET; Double-Gate MOSFET; Subthreshold characteristics;
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