Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Activation of Delta-doped N-type Layers in Nanotunneling Silicon Junction

나노터널링 실리콘 접합에서 델타도핑된 N형층의 활성화에 관한 연구

  • Inseung Lee (Department of Mechanical Engineering, Jeonbuk National University) ;
  • Keunjoo Kim (Department of Mechanical Engineering, Jeonbuk National University)
  • 이인승 (전북대학교 기계공학과) ;
  • 김근주 (전북대학교 기계공학과)
  • Received : 2024.07.23
  • Accepted : 2024.09.12
  • Published : 2024.09.30
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Abstract

We investigated the n-type δ-doping activation of the tunneling junctions of Si nanolayers for silicon tandem cell applications. The thin film growth of pn junction with the inclusion of phosphorus monolayer was performed by plasma-enhanced chemical vapor deposition with the implement on 6-inch wafers of p-Si microtextured substrates. The rapid thermal annealing processes with various temperatures were performed to activate the δ-doped layer. The activation was confirmed by the electron spin resonance with Lande factor g=2.006085 for the delocalized conduction electron from the phosphorus δ-doped layer at the magnetic field of 3357.5 Gauss. The tunneling junction shows the Ohmic character at the low voltage and the Schottky character at the high voltage bias.

Keywords

Acknowledgement

This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT) (No. 2022R1F1A1062800). This work was also supported by the 2024-2025 project of Jeonbuk National University.

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