Current Optics and Photonics

Optical Society of Korea (한국광학회)
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A Ridge-type Silicon Waveguide Optical Modulator Based on Graphene and Black Phosphorus Heterojunction

  • Zhenglei Zhou (College of Mathematics and Physics, Chengdu University of Technology) ;
  • Jianhua Li (College of Mathematics and Physics, Chengdu University of Technology) ;
  • Desheng Yin (College of Mathematics and Physics, Chengdu University of Technology) ;
  • Xing Chen (School of Electronic Engineering, Chengdu Technological University)
  • Received : 2024.02.05
  • Accepted : 2024.06.09
  • Published : 2024.08.25
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Abstract

In this paper, an optical modulator based on monolayer graphene and triple-layer black phosphorus (BP) heterojunction in the optical communication band range is designed. The influences of geometric parameters, chemical potential, BP orientation and dispersion on the fundamental mode of this modulator were determined in detail by the finite-difference time-domain (FDTD) method. Using appropriate geometric parameter settings, the extinction ratio of this proposed modulator is 0.166 dB, while the modulator with a working length of 3 ㎛ can realize a 0.498 dB modulation depth. The 3-dB bandwidth of this modulator could achieve up to 2.65 GHz with 27.23 fJ/bit energy consumption. The extinction ratio and bandwidth of the proposed modulator increased by 66% and 120.83%, respectively, compared to the monolayer graphene-based ridge-type waveguide modulator. Energy consumption was reduced by 97.28%, compared to a double-layer graphene-based modulator.

Keywords

Acknowledgement

Natural Science Foundation of Sichuan Province (Grant no. 2022NSFSC1800).

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