반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
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분수계 수학을 사용한 박막트랜지스터의 문턱전압 이동 모델 확장

Expansion of Thin-Film Transistors' Threshold Voltage Shift Model using Fractional Calculus

  • 정태호 (서울과학기술대학교 전자공학과)
  • Taeho Jung (Department of Electronic Engineering, Seoul National University of Science and Technology)
  • 투고 : 2024.05.28
  • 심사 : 2024.06.21
  • 발행 : 2024.06.30
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초록

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

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참고문헌

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