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25 kW 1200 V unidirectional DC solid-state circuit breaker design with SiC MOSFET desaturation detection

  • Jinwoo Kim (Department of Electrical and Electronics Engineering, Konkuk University) ;
  • Dongkwan Yoon (Department of Electrical and Electronics Engineering, Konkuk University) ;
  • Dongmin Choi (Department of Electrical and Electronics Engineering, Konkuk University) ;
  • Jung‑Yong Lee (Department of Electrical and Electronics Engineering, Konkuk University) ;
  • Younghoon Cho (Department of Electrical and Electronics Engineering, Konkuk University)
  • Received : 2023.03.16
  • Accepted : 2023.04.24
  • Published : 2023.07.20

Abstract

This paper proposes a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) based a solid-state circuit breaker (SSCB) with a desaturation detection method. Since the SiC MOSFET has a higher switching speed than general semiconductors, the SSCB can achieve faster and higher blocking performance. However, protecting SiC MOSFETs from short circuit conditions is not easy, because fault blocking occurs with a large overshoot in the drain-source voltage. Thus, this paper proposes design methods for a snubber circuit and a desaturation detecting method to protect SiC MOSFETs. This design method is based on SSCB blocking operation equations, and a simulation is conducted to verify the equations. In addition, the stray components of the printed circuit board (PCB) are simulated to make an exact comparison with experiments. An SSCB is built based on the equation and tested under fault conditions. The experimental results demonstrate that the proposed SSCB blocks short circuit current of less than 0.9 ㎲. Finally, a thermal test is conducted at the rated load to validate the heat control performance.

Keywords

Acknowledgement

This work was supported by the Technology Innovation Program (No. 20206910100160, Smart PCS commercialization technology based on modularization of power conversion core element) funded by the Ministry of Trade, Industry & Energy(MOTIE) and Korea Evaluation Institute of Industrial Technology(KEIT) of the Republic of Korea. This work was supported by the Technology Innovation Program (No. 20010965, Development of Electronic Current Voltage Transformer and Spacer based on Eco-friendly Solid Insulation) funded by the Ministry of Trade, Industry & Energy (MOTIE) and Korea Evaluation Institute of Industrial Technology (KEIT) of the Republic of Korea.

References

  1. Wang, Z., Shi, X., Xue, Y., Tolbert, L.M., Wang, F., Blalock, B.J.: Design and performance evaluation of overcurrent protection schemes for silicon carbide (SiC) power MOSFETs. IEEE Trans. Ind. Elec. 61(10), 5570-5581 (2014)  https://doi.org/10.1109/TIE.2013.2297304
  2. Rahimi, R., Habibi, S., Shamsi, P., Ferdowsi, M.: A high step-up Z-source DC-DC converter for integration of photovoltaic panels into DC microgrid. In: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). (2021) 
  3. Ma, X., Liu, S., Liu, H., Zhao, S.: The selection of optimal structure for stand-alone micro-grid based on modeling and optimization of distributed generators. IEEE Access 10, 40642-40660 (2022)  https://doi.org/10.1109/ACCESS.2022.3164514
  4. Li, Y., et al.: A virtual impedance comprehensive control strategy for the controllably inductive power filtering system. IEEE Trans. Pow. Electron. 32(2), 920-926 (2017)  https://doi.org/10.1109/TPEL.2016.2601086
  5. Lawes, D., Ran, L., Xu, Z.,: Design of a solid-state D.C. circuit breaker for light rail transit power supply network. In: 2014 IEEE Energy Conversion Congress and Exposition (ECCE). (2014) 
  6. Li, W., Liang, L., Liu, W., Wu, X.: State of charge estimation of lithium-ion batteries using a discrete-time nonlinear observer. IEEE Trans. Ind. Electron. 64(11), 8557-8565 (2017)  https://doi.org/10.1109/TIE.2017.2703685
  7. Ding, X., et al.: Analytical and experimental evaluation of SiC-inverter nonlinearities for traction drives used in electric vehicles. IEEE Trans. Veh. Technol. 67(1), 146-159 (2018)  https://doi.org/10.1109/TVT.2017.2765670
  8. Zeng, X., Yu, K., Wang, Y., Xu, Y.: A novel single phase grounding fault protection scheme without threshold setting for neutral ineffectively earthed power systems. CSEE J. Power Energy Syst. 2(3), 73-81 (2016)  https://doi.org/10.17775/CSEEJPES.2016.00038
  9. Deng, F., Zeng, X., Pan, L.: Research on multi-terminal traveling wave fault location method in complicated networks based on cloud computing platform. Prot. Control Mod. Power Syst. 2(1), 19 (2017) 
  10. Zhao, S., Kheirollahi, R., Zhang, H., Lu, F.: Implementation of 99.96% efficiency SSCB at 100 A/1hour continuous thermal testing. In: 2022 IEEE Energy Conversion Congress and Exposition (ECCE). (2022) 
  11. Wang, Y., Li, W., Wu, X., Wu, X.: A novel bidirectional solid-state circuit breaker for DC microgrid. IEEE Trans. Ind. Electron. 66(7), 5707-5714 (2019)  https://doi.org/10.1109/TIE.2018.2878191
  12. Eswaraiah, G., Laxmi, A.J.: Protection of DC bus using solid-state DC breaker. In: 2022 IEEE 2nd International Conference on Sustainable Energy and Future Electric Transportation (SeFeT). (2022) 
  13. Rodrigues, R., Du, Y., Antoniazzi, A., Cairoli, P.: A review of solid-state circuit breakers. IEEE Trans. Power Electron. 36(1), 364-377 (2021)  https://doi.org/10.1109/TPEL.2020.3003358
  14. Boettcher, N., Erlbacher, T.: A monolithically integrated SiC circuit breaker. IEEE Electron. Device Lett. 42(10), 1516-1519 (2021)  https://doi.org/10.1109/LED.2021.3102935
  15. Park, D., Shin, D., Sul, S.K., Sim, J., Kim, Y.G.: Overvoltage suppressing snubber circuit for solid state circuit breaker considering system inductances. In: 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia). (2019) 
  16. Shin, D., Sul, S.K., Sim, J., Kim Y.G.: Snubber circuit of bidirectional solid state DC circuit breaker based on SiC MOSFET. In: 2018 IEEE Energy Conversion Congress and Exposition (ECCE). (2018) 
  17. Corzine, K.A., Ashton, R.W.: A new Z-source DC circuit breaker. IEEE Trans. Power Electron. 27(6), 2796-2804 (2012)  https://doi.org/10.1109/TPEL.2011.2178125
  18. Ren, Y., Yang, X., Zhang, F., Wang, F., Tolbert, L.M., Pei, Y.: A single gate driver based solid-state circuit breaker using series connected SiC MOSFETs. IEEE Trans. Power Electron. 34(3), 2002-2006 (2019)  https://doi.org/10.1109/TPEL.2018.2861920
  19. Miao, Z., Sabui, G., Roshandeh, A.M., Shen, Z.J.: Design and analysis of DC solid-state circuit breakers using SiC JFETs. IEEE J. Emerg. Sel. Top. Power Electron. 4(3), 863-873 (2016)  https://doi.org/10.1109/JESTPE.2016.2558448
  20. Texas Instrument, Inc.: UCC21750 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI. http://www. TI.com/ (2023). 
  21. GeneSiC, Inc.: GD60MPS17H 1700V 60A SiC Schottky MPSTM Diode. https://genesicsemi.com/ (2021). 
  22. GeneSiC, Inc.: G3R20MT17K 1700V 20 mΩ SiC MOSFET. https://genesicsemi.com/ (2021). 
  23. Kim, J., Cho, Y.: Overcurrent and short-circuit protection method using desaturation detection of SiC MOSFET. In: 2020 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW). (2020)