과제정보
This Research was supported by Seokyeong University in 2022 The EDA tool was supported by the IC Design Education Center(IDEC), Korea
참고문헌
- A. D. Franklin, M. C. Hersam, and H.-S. P. Wong, "Carbon nanotube transistors: Making electronics from molecules," Science, vol.78, no. 6621, pp.726-732, 2022. DOI: 10.1126/science.abp8278
- S. Zhang et al., "Emerging Internet of Things driven carbon nanotubes-based devices," Nano Research, vol.15, no.5, pp.4613-4637, 2022. DOI: 10.1007/s12274-021-3986-7
- R. Chen et al., "Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation-Part I: CNFET Transistor Optimization," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol.30, no.4, pp.432-439, 2022. DOI: 10.1109/TVLSI.2022.3146125
- R. Chen et al., "Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation-Part II: CNT Interconnect Optimization," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol.30, no.4, pp.440-448, 2022. DOI: 10.1109/TVLSI.2022.3146064
- J. Deng and H. . -S. P. Wong, "A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application-Part I: Model of the Intrinsic Channel Region," IEEE Transactions on Electron Devices, vol.54, no.12, pp.3186-3194, 2007. DOI: 10.1109/TED.2007.909030
- J. Deng and H. . -S. P. Wong, "A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application-Part II: Full Device Model and Circuit Performance Benchmarking," IEEE Transactions on Electron Devices, vol.54, no.12, pp.3195-3205, 2007. DOI: 10.1109/TED.2007.909043
- Yang et al., "High-performance carbon nanotube field-effect transistors with electron mobility of 39.4 cm2 V-1 s-1 using anion-π interaction doping," Carbon, vol.203, pp.761-769, 2023. DOI: 10.1016/j.carbon.2022.12.025
- J. Zhou et al., "Carbon Nanotube Radiofrequency Transistors With fT/fMAX of 376/318 GHz," IEEE Electron Device Letters, vol.44, no.2, pp.329-332, 2023. DOI: 10.1109/LED.2022.3227133
- C. Liu et al., "Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays," ACS Nano, vol.16, no.12, pp.21482-21490, 2022. DOI: 10.1021/acsnano.2c10007
- G. Long et al., "Carbon nanotube-based flexible high-speed circuits with sub-nanosecond stage delays," Nature Communications, vol.13, no.1, pp.6734,
- D.-H. Shin et al., "Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors," Nanomaterials, vol.12, no.21, p.3820, 2022. DOI: 10.3390/nano12213820
- Q. Huang et al., "Intrinsically flexible allcarbon-nanotube electronics enabled by a hybrid organic-inorganic gate dielectric," npj Flex. Electron., vol.6, no.1, p.61, 2022. DOI: 10.1038/s41528-022-00190-8
- G. Hills et al., "Modern microprocessor built from complementary carbon nanotube transistors," Nature, vol.572, no.7771, pp.595-602, 2019. DOI: 10.1038/s41586-019-1493-8
- R. S. Singh et al., "Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform.," Mater. (Basel, Switzerland), vol.15, no.14, 2022. DOI: 10.3390/ma15144935
- A. Valluri and S. Musala, "Low leakage, differential read scheme CNTFET based 9T SRAM cells for Low Power applications," Int. J. Electron., pp.1-22, 2022. DOI: 10.1080/00207217.2022.2148289
- V. Bakhtiary, A. Amirany, M. H. Moaiyeri, and K. Jafari, "An SEU-hardened ternary SRAM design based on efficient ternary C-elements using CNTFET technology," Microelectron Reliability, vol.140, p.114881, 2023. DOI: 10.1016/j.microrel.2022.114881
- A. Sachdeva, D. Kumar, and E. Abbasian, "A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time," AEU - International Journal of Electronics and Communications, vol.162, 2023. DOI: 10.1016/j.aeue.2023.154565
- A. Darabi, M. R. Salehi, and E. Abiri, "Onesided 10T static-random access memory cell for energy-efficient and noise-immune internet of things applications," International Journal of Circuit and Theory Applications, vol.51, no.1, pp.379-397, 2023. DOI: 10.1002/cta.3408
- M. Elangovan and M. Muthukrishnan, "Design of High Stability and Low Power 7T SRAM Cell in 32-NM CNTFET Technology," Journal of Circuits, Systems and Computers, vol.31, no.13, 2022. DOI: 10.1142/S0218126622502334
- N. Hajizadeh Bastani and K. Navi, "A LowPower and Robust Quaternary SRAM Cell for Nanoelectronics," Analog Integrated Circuits and Signal Processing, vol.111, no.3, pp.483-493, 2022. DOI: 10.1007/s10470-022-02031-0
- G. Cho, "A Study on the Circuit Design Method of CNTFET SRAM Considering Carbon Nanotube Density," Journal of IKEEE, vol.25, no.3, pp.473-478, 2021. https://doi.org/10.7471/IKEEE.2021.25.3.473
- PTM Models, http://ptm.asu.edu/
- CNFET Models. https://nano.stanford.edu/downloads/stanford-cnfet-model/stanford-cnfet-model-hspice