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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Electrical characterization of 4H-SiC MOSFET with aluminum gate according to design parameters

Aluminium Gate를 적용한 4H-SiC MOSFET의 Design parameter에 따른 전기적 특성 분석

  • Seung-Hwan Baek (Dept. of Electronics Engineering, Dankook University) ;
  • Jeong-Min Lee (Dept. of Electronics Engineering, Dankook University) ;
  • U-yeol Seo (Dept. of Electronics Engineering, Dankook University) ;
  • Yong-Seo Koo (Dept. of Electronics Engineering, Dankook University)
  • Received : 2023.12.21
  • Accepted : 2023.12.26
  • Published : 2023.12.31
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Abstract

SiC is replacing the position of silicon in the power semiconductor field due to its superior resistance to adverse conditions such as high temperature and high voltage compared to silicon, which occupies the majority of existing industrial fields. In this paper, the gate of 4H-SiC Planar MOSFET, one of the power semiconductor devices, was formed with aluminium to make the contrast and parameter values consistent with polycrystalline Si gate, and the threshold voltage, breakdown voltage, and IV characteristics were studied by varying the channel doping concentration of SiC MOSFET.

SiC는 고온, 고전압을 비롯한 악조건에서의 내성이 기존 산업분야의 대다수를 점유하고 있는 Silicon에 비해 우수하여 전력반도체 분야에서 Silicon의 위치를 대체하여 가고 있다. 본 논문은 전력 반도체 소자 중 하나인 4H-SiC Planar MOSFET에 알루미늄으로 Gate를 형성하여 다결정 Si 게이트와 대비, 파라미터 값들이 일관성을 갖도록 하였으며, SiC MOSFET의 채널 도핑 농도에 변화를 주어 문턱전압과 항복전압, IV 특성을 연구하였다.

Keywords

Acknowledgement

This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program-Korea Collaborative & High-tech Initiative for Prospective Semiconductor Research) ("RS-2023-00200000", Development of Wireless Charging SoC with built-in Ultra-Small, High-Robustness ESD Protection Circuit for Wearable Devices) funded By the Ministry of Trade, Industry & Energy(MOTIE, Korea)(1415187474)" This paper was supported by Korea Evaluatioin Institute of Industiral Technology(KEIT) grant funded by the Ministry of Trade, Industry & Energy (20016115, "Development of DLDO with 99% maximum current efficiency of event-driven asynchronous type without external capacitor") and supported by the RS-2022-00143842, "Single/Three-phase AC/DC Converter Smart Power IC using SiC MOSFET devices".

References

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