Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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A SiC MOSFET-based parallel multi-inverter inductive power transfer (IPT) system

  • Bo, Qiang (Institute of Electrical Engineering, Chinese Academy of Sciences) ;
  • Wang, Lifang (Institute of Electrical Engineering, Chinese Academy of Sciences) ;
  • Zhang, Yuwang (Institute of Electrical Engineering, Chinese Academy of Sciences)
  • Received : 2021.06.22
  • Accepted : 2022.02.24
  • Published : 2022.06.20
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Abstract

A parallel multi-inverter inductive power transfer (IPT) system based on SiC MOSFETs is presented to upgrade the power level and to suppress the circulating current. First, the basic principle and a mathematical model of a parallel multi-inverter IPT system are analyzed, and the output current and power for each of the parallel inverters are modeled. Second, the compensation network parameters for the parallel multi-inverter IPT system are configured and a cooperative control strategy is given. Third, various circulating loops and zero-voltage-switching (ZVS) operation are studied. Finally, a 1.2 kW IPT system is built for experimental verification. Results obtained with the experimental system demonstrate that the output power ratio for each of the parallel inverters is about 1:2 and all of them achieve ZVS. In addition, the maximum efficiency of the DC-DC system is measured to be 92.53%, while the circulating current amplitude is only 0.2 A.

Keywords

Acknowledgement

This work was supported in part by the National special fund for international science and technology cooperation under Grant 2019YFE0100200, the National Natural Science Foundation of China under Grant 51807188, and the Chinese Academy of Sciences under Grant XDA22010403.

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