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http://dx.doi.org/10.1007/s43236-022-00411-3

A SiC MOSFET-based parallel multi-inverter inductive power transfer (IPT) system  

Bo, Qiang (Institute of Electrical Engineering, Chinese Academy of Sciences)
Wang, Lifang (Institute of Electrical Engineering, Chinese Academy of Sciences)
Zhang, Yuwang (Institute of Electrical Engineering, Chinese Academy of Sciences)
Publication Information
Journal of Power Electronics / v.22, no.6, 2022 , pp. 1047-1057 More about this Journal
Abstract
A parallel multi-inverter inductive power transfer (IPT) system based on SiC MOSFETs is presented to upgrade the power level and to suppress the circulating current. First, the basic principle and a mathematical model of a parallel multi-inverter IPT system are analyzed, and the output current and power for each of the parallel inverters are modeled. Second, the compensation network parameters for the parallel multi-inverter IPT system are configured and a cooperative control strategy is given. Third, various circulating loops and zero-voltage-switching (ZVS) operation are studied. Finally, a 1.2 kW IPT system is built for experimental verification. Results obtained with the experimental system demonstrate that the output power ratio for each of the parallel inverters is about 1:2 and all of them achieve ZVS. In addition, the maximum efficiency of the DC-DC system is measured to be 92.53%, while the circulating current amplitude is only 0.2 A.
Keywords
SiC MOSFET; Inductive power transfer; Power expansion; Drive asynchrony; Circulating current suppression; Compensation network parameter design;
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Times Cited By KSCI : 3  (Citation Analysis)
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