전기전자학회논문지 (Journal of IKEEE)

  • 제26권2호
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  • Pages.306-312
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  • 2022
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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전위 장벽에 따른 4H-SiC MPS 소자의 전기적 특성과 깊은 준위 결함

Electrical Characteristics and Deep Level Traps of 4H-SiC MPS Diodes with Different Barrier Heights

  • Byun, Dong-Wook (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Lee, Hyung-Jin (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Lee, Hee-Jae (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Lee, Geon-Hee (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Shin, Myeong-Cheol (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Dept. of Electronic materials Engineering, Kwangwoon University)
  • 투고 : 2022.06.07
  • 심사 : 2022.06.22
  • 발행 : 2022.06.30
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초록

서로 다른 PN 비율과 금속화 어닐링 온도에 의해 장벽 높이가 다른 4H-SiC 병합 PiN Schottky(MPS) 다이오드의 전기적 특성과 심층 트랩을 조사했다. MPS 다이오드의 장벽 높이는 IV 및 CV 특성에서 얻었다. 전위장벽 높이가 낮아짐에 따라 누설 전류가 증가하여 10배의 전류가 발생하였다. 또한, 심층 트랩(Z1/2 및 RD1/2)은 4개의 MPS 다이오드에서 DLTS 측정을 통해 밝혀졌다. DLTS 결과를 기반으로, 트랩 에너지 준위는 낮은 장벽 높이와 함께 22~28%의 얕은 수준으로 확인되었다. 이는 쇼트키 장벽 높이에 대해 DLTS에 의해 결정된 결함 수준 및 농도의 의존성을 확인할 수 있다.

We investigated electrical properties and deep level traps in 4H-SiC merged PiN Schottky (MPS) diodes with different barrier heights by different PN ratios and metallization annealing temperatures. The barrier heights of MPS diodes were obtained in IV and CV characteristics. The leakage current increased with the lowering barrier height, resulting in 10 times larger current. Additionally, the deep level traps (Z1/2 and RD1/2) were revealed by deep level transient spectroscopy (DLTS) measurement in four MPS diodes. Based on DLTS results, the trap energy levels were found to be shallow level by 22~28% with lower barrier height It could confirm the dependence of the defect level and concentration determined by DLTS on the Schottky barrier height and may lead to incorrect results regarding deep level trap parameters with small barrier heights.

키워드

과제정보

This work was supported by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE) (P0012451), Technology Innovation Program (20003540) and the excellent researcher support project of Kwangwoon University in 2022.

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