Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
권호 표지
DOI QR코드

DOI QR Code

The transition of dominant noise source for different CMOS process with Cgd consideration

Cgd 성분을 포함한 공정별 주요 잡음원 천이 과정 연구

  • Koo, Minsuk (Department of Electrical Engineering, Purdue University)
  • Received : 2020.05.10
  • Accepted : 2020.05.13
  • Published : 2020.05.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we analyze the dominant noise source of conventional inductively degenerated common-source (CS) cascode low noise amplifier (LNA) when width and gate length of stacked transistors vary. Analytical MOSFET and its noise model are used to estimate the contributions of noise sources. All parameters are based on measured data of 60nm, 90nm and 130nm CMOS devices. Based on the noise analysis for different frequencies and device parameters including process nodes, the dominant noise source can be analyzed to optimize noise figure on the configuration. We verified analytically that the intuctively degenerated CS topology can not sustain its benefits in noise above a certain operation frequency of LNA over different process nodes.

Keywords

References

  1. A. M. Niknejad, S. Thyagarajan, E. Alon, Y. Wang, and C. Hull, "A circuit designer's guide to 5G mm-wave." in Proceeding of IEEE Custom Integrated Circuits Conference (CICC), pp. 1-8, Sep. 2015.
  2. X. S. Loo, Moe Z. Win, K. S. Yeo, "fT Enhancement of CMOS Transistor Using Isolated Polysilicon Gates." in Proceeding of IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 76-79. 2018.
  3. Y. Cheng, "A study on figures of merit for high frequency behavior of MOSFETs in RF IC applications." in Proceeding of Workshop Compact Modeling, 2005.
  4. I. Song, J. Jeon, H. S. Jhon, J. Kim, B. G. Park, J. D. Lee, and H. Shin, "A simple figure of merit of RF MOSFET for low-noise amplifier design." IEEE Electron Device Letters, vol. 29, pp 1380-1382, 2008. https://doi.org/10.1109/LED.2008.2006863
  5. P. Qin, and X. Quan, "Design of wideband LNA employing cascaded complimentary common gate and common source stages." IEEE microwave and wireless components letters, vol. 27, pp. 587-589, 2017. https://doi.org/10.1109/LMWC.2017.2701300
  6. M. Arsalan, and W. Falin "LNA Design for Future S Band Satellite Navigation and 4G LTE Applications." Computer Modeling in Engineering & Sciences, vol. 119, pp 249-261, 2019 https://doi.org/10.32604/cmes.2019.04430
  7. H. Jung, H. S. Jhon, I. Song, M. Koo, and H. Shin, "Design optimization of a 10 GHz Low Noise Amplifier with gate drain capacitance consideration in 65 nm CMOS Technology." in Proceeding of IEEE 9th International Conference on Solid-State and Integrated-Circuit Technology, pp. 1480-1483, Oct. 2008.
  8. J. Jeon, J. D. Lee, B.-G. Park, and H. Shin, "An analytical channel thermal noise model for deep sub-micron MOSFETs with short-channel effects," Solid-State Electronics, vol. 51, no. 7, pp. 1034-1038, July 2007. https://doi.org/10.1016/j.sse.2007.05.004