반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

3차원 플래시 메모리의 전하 손실 원인 규명을 위한 Activation Energy 분석

Study on the Activation Energy of Charge Migration for 3D NAND Flash Memory Application

  • Yang, Hee Hun (Dept. of Electronics Engineering, Chungnam National University) ;
  • Sung, Jae Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Hwee Yeon (Dept. of Electronics Engineering, Chungnam National University) ;
  • Jeong, Jun Kyo (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga won (Dept. of Electronics Engineering, Chungnam National University)
  • 투고 : 2019.06.19
  • 심사 : 2019.06.22
  • 발행 : 2019.06.30
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초록

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

키워드

참고문헌

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